DE69828469D1 - Sekundäremission-Elektronenquelle für Ionenimplantierungsgerät - Google Patents

Sekundäremission-Elektronenquelle für Ionenimplantierungsgerät

Info

Publication number
DE69828469D1
DE69828469D1 DE69828469T DE69828469T DE69828469D1 DE 69828469 D1 DE69828469 D1 DE 69828469D1 DE 69828469 T DE69828469 T DE 69828469T DE 69828469 T DE69828469 T DE 69828469T DE 69828469 D1 DE69828469 D1 DE 69828469D1
Authority
DE
Germany
Prior art keywords
ion implantation
electron source
implantation device
emission electron
secondary emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69828469T
Other languages
English (en)
Other versions
DE69828469T2 (de
Inventor
James David Bernstein
Brian Scott Freer
Peter Lawrence Kellerman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Application granted granted Critical
Publication of DE69828469D1 publication Critical patent/DE69828469D1/de
Publication of DE69828469T2 publication Critical patent/DE69828469T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
DE69828469T 1997-09-08 1998-09-04 Sekundäremission-Elektronenquelle für Ionenimplantierungsgerät Expired - Lifetime DE69828469T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/924,969 US5909031A (en) 1997-09-08 1997-09-08 Ion implanter electron shower having enhanced secondary electron emission
US924969 1997-09-08

Publications (2)

Publication Number Publication Date
DE69828469D1 true DE69828469D1 (de) 2005-02-10
DE69828469T2 DE69828469T2 (de) 2006-05-18

Family

ID=25451002

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69828469T Expired - Lifetime DE69828469T2 (de) 1997-09-08 1998-09-04 Sekundäremission-Elektronenquelle für Ionenimplantierungsgerät

Country Status (6)

Country Link
US (1) US5909031A (de)
EP (1) EP0901149B1 (de)
JP (1) JP4470126B2 (de)
KR (1) KR100386875B1 (de)
DE (1) DE69828469T2 (de)
TW (1) TW399239B (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010043738A (ko) * 1998-05-22 2001-05-25 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 저 에너지 이온 주입을 위한 방법 및 장치
US6541780B1 (en) * 1998-07-28 2003-04-01 Varian Semiconductor Equipment Associates, Inc. Particle beam current monitoring technique
JP2000133197A (ja) * 1998-10-30 2000-05-12 Applied Materials Inc イオン注入装置
US7378670B2 (en) * 2001-06-22 2008-05-27 Toyo Tanso Co., Ltd. Shielding assembly for a semiconductor manufacturing apparatus and method of using the same
JP2005527965A (ja) * 2001-08-28 2005-09-15 ハイニックス セミコンダクター マニュファクチュアリング アメリカ インコーポレイテッド プラズマチャンバ用チャンバシールド
KR100546336B1 (ko) * 2003-07-03 2006-01-26 삼성전자주식회사 복수의 교점을 가지는 오버레이 키 및 이를 이용한오버레이 측정 방법
KR100598102B1 (ko) * 2004-05-12 2006-07-07 삼성전자주식회사 이온 주입 설비에 사용되는 이온 발생 장치
US7358508B2 (en) * 2005-11-10 2008-04-15 Axcelis Technologies, Inc. Ion implanter with contaminant collecting surface
GB2440414B (en) * 2006-07-12 2010-10-27 Applied Materials Inc An ion beam guide tube
US7629597B2 (en) * 2006-08-18 2009-12-08 Axcelis Technologies, Inc. Deposition reduction system for an ion implanter
US8330127B2 (en) * 2008-03-31 2012-12-11 Varian Semiconductor Equipment Associates, Inc. Flexible ion source
CN105097460A (zh) * 2014-05-09 2015-11-25 中芯国际集成电路制造(上海)有限公司 一种解决离子注入机路径污染的方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6410563A (en) * 1987-07-02 1989-01-13 Sumitomo Eaton Nova Electric charging suppressor of ion implanter
US4804837A (en) * 1988-01-11 1989-02-14 Eaton Corporation Ion implantation surface charge control method and apparatus
JP2805795B2 (ja) * 1989-02-13 1998-09-30 富士通株式会社 イオンビーム照射装置
JPH07120516B2 (ja) * 1990-07-26 1995-12-20 株式会社東芝 低エネルギ−電子の照射方法および照射装置
US5134299A (en) * 1991-03-13 1992-07-28 Eaton Corporation Ion beam implantation method and apparatus for particulate control
US5164599A (en) * 1991-07-19 1992-11-17 Eaton Corporation Ion beam neutralization means generating diffuse secondary emission electron shower
US5466929A (en) * 1992-02-21 1995-11-14 Hitachi, Ltd. Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus
US5343047A (en) * 1992-06-27 1994-08-30 Tokyo Electron Limited Ion implantation system
JP3054302B2 (ja) * 1992-12-02 2000-06-19 アプライド マテリアルズ インコーポレイテッド イオン注入中の半導体ウェハにおける帯電を低減するプラズマ放出システム
JPH06216060A (ja) * 1993-01-12 1994-08-05 Tokyo Electron Ltd 真空処理方法
US5531420A (en) * 1994-07-01 1996-07-02 Eaton Corporation Ion beam electron neutralizer
US5656092A (en) * 1995-12-18 1997-08-12 Eaton Corporation Apparatus for capturing and removing contaminant particles from an interior region of an ion implanter

Also Published As

Publication number Publication date
EP0901149A2 (de) 1999-03-10
TW399239B (en) 2000-07-21
JP4470126B2 (ja) 2010-06-02
DE69828469T2 (de) 2006-05-18
EP0901149B1 (de) 2005-01-05
JPH11154484A (ja) 1999-06-08
KR100386875B1 (ko) 2003-08-21
EP0901149A3 (de) 2000-10-18
KR19990029595A (ko) 1999-04-26
US5909031A (en) 1999-06-01

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Legal Events

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8364 No opposition during term of opposition