DE69817641D1 - Herstellungsverfahren einer Elektronenemissionsvorrichtung und Anzeigevorrichtung - Google Patents

Herstellungsverfahren einer Elektronenemissionsvorrichtung und Anzeigevorrichtung

Info

Publication number
DE69817641D1
DE69817641D1 DE69817641T DE69817641T DE69817641D1 DE 69817641 D1 DE69817641 D1 DE 69817641D1 DE 69817641 T DE69817641 T DE 69817641T DE 69817641 T DE69817641 T DE 69817641T DE 69817641 D1 DE69817641 D1 DE 69817641D1
Authority
DE
Germany
Prior art keywords
manufacturing
electron emission
display device
emission device
display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69817641T
Other languages
English (en)
Other versions
DE69817641T2 (de
Inventor
Takamasa Yoshikawa
Kiyohide Ogasawara
Hiroshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Publication of DE69817641D1 publication Critical patent/DE69817641D1/de
Application granted granted Critical
Publication of DE69817641T2 publication Critical patent/DE69817641T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Cold Cathode And The Manufacture (AREA)
DE69817641T 1997-03-10 1998-03-06 Herstellungsverfahren einer Elektronenemissionsvorrichtung und Anzeigevorrichtung Expired - Fee Related DE69817641T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP11868797 1997-03-10
JP11868797 1997-03-10
JP17100197A JPH10312739A (ja) 1997-03-10 1997-06-12 電子放出素子及びこれを用いた表示装置
JP17100197 1997-06-12

Publications (2)

Publication Number Publication Date
DE69817641D1 true DE69817641D1 (de) 2003-10-09
DE69817641T2 DE69817641T2 (de) 2004-04-08

Family

ID=26456580

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69817641T Expired - Fee Related DE69817641T2 (de) 1997-03-10 1998-03-06 Herstellungsverfahren einer Elektronenemissionsvorrichtung und Anzeigevorrichtung

Country Status (4)

Country Link
US (1) US6023125A (de)
EP (1) EP0865062B1 (de)
JP (1) JPH10312739A (de)
DE (1) DE69817641T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100267964B1 (ko) * 1998-07-20 2000-10-16 구자홍 유기 이엘(el) 디스플레이 패널 및 그 제조 방법
US6291283B1 (en) 1998-11-09 2001-09-18 Texas Instruments Incorporated Method to form silicates as high dielectric constant materials
JP2000208508A (ja) 1999-01-13 2000-07-28 Texas Instr Inc <Ti> 珪酸塩高誘電率材料の真空蒸着
US7335965B2 (en) * 1999-08-25 2008-02-26 Micron Technology, Inc. Packaging of electronic chips with air-bridge structures
US7276788B1 (en) 1999-08-25 2007-10-02 Micron Technology, Inc. Hydrophobic foamed insulators for high density circuits
US6890847B1 (en) * 2000-02-22 2005-05-10 Micron Technology, Inc. Polynorbornene foam insulation for integrated circuits
US6920680B2 (en) * 2001-08-28 2005-07-26 Motorola, Inc. Method of making vacuum microelectronic device
US7476925B2 (en) * 2001-08-30 2009-01-13 Micron Technology, Inc. Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interploy insulators
US7045430B2 (en) * 2002-05-02 2006-05-16 Micron Technology Inc. Atomic layer-deposited LaAlO3 films for gate dielectrics
US7160577B2 (en) * 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7589029B2 (en) * 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US7224116B2 (en) * 2002-09-11 2007-05-29 Osram Opto Semiconductors Gmbh Encapsulation of active electronic devices
US20040048033A1 (en) * 2002-09-11 2004-03-11 Osram Opto Semiconductors (Malaysia) Sdn. Bhd. Oled devices with improved encapsulation
US7193364B2 (en) * 2002-09-12 2007-03-20 Osram Opto Semiconductors (Malaysia) Sdn. Bhd Encapsulation for organic devices
KR100908712B1 (ko) * 2003-01-14 2009-07-22 삼성에스디아이 주식회사 전자 방출 특성을 향상시킬 수 있는 에미터 배열 구조를갖는 전계 방출 표시 장치
US20040238846A1 (en) * 2003-05-30 2004-12-02 Georg Wittmann Organic electronic device
US7687409B2 (en) 2005-03-29 2010-03-30 Micron Technology, Inc. Atomic layer deposited titanium silicon oxide films
US7662729B2 (en) * 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7572695B2 (en) * 2005-05-27 2009-08-11 Micron Technology, Inc. Hafnium titanium oxide films
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
JP2009104827A (ja) * 2007-10-22 2009-05-14 Hitachi Ltd 画像表示装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3390495B2 (ja) * 1993-08-30 2003-03-24 株式会社日立製作所 Ｍｉｍ構造素子およびその製造方法
ATE165187T1 (de) * 1993-11-09 1998-05-15 Canon Kk Bildanzeigegerät
JP3305166B2 (ja) * 1994-06-27 2002-07-22 キヤノン株式会社 電子線装置
JP3281533B2 (ja) * 1996-03-26 2002-05-13 パイオニア株式会社 冷電子放出表示装置及び半導体冷電子放出素子

Also Published As

Publication number Publication date
DE69817641T2 (de) 2004-04-08
US6023125A (en) 2000-02-08
EP0865062B1 (de) 2003-09-03
EP0865062A1 (de) 1998-09-16
JPH10312739A (ja) 1998-11-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee