DE69802607D1 - Verfahren zum Füllen von nicht tiefen Graben - Google Patents

Verfahren zum Füllen von nicht tiefen Graben

Info

Publication number
DE69802607D1
DE69802607D1 DE69802607T DE69802607T DE69802607D1 DE 69802607 D1 DE69802607 D1 DE 69802607D1 DE 69802607 T DE69802607 T DE 69802607T DE 69802607 T DE69802607 T DE 69802607T DE 69802607 D1 DE69802607 D1 DE 69802607D1
Authority
DE
Germany
Prior art keywords
procedure
shallow trenches
filling shallow
filling
trenches
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69802607T
Other languages
English (en)
Other versions
DE69802607T2 (de
Inventor
Bernhard Fiegl
Walter Glashauser
Max G Levy
Victor R Nastasi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
International Business Machines Corp
Original Assignee
Siemens AG
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, International Business Machines Corp filed Critical Siemens AG
Publication of DE69802607D1 publication Critical patent/DE69802607D1/de
Application granted granted Critical
Publication of DE69802607T2 publication Critical patent/DE69802607T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Drying Of Semiconductors (AREA)
DE69802607T 1997-04-14 1998-03-12 Verfahren zum Füllen von nicht tiefen Graben Expired - Lifetime DE69802607T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/824,703 US5804490A (en) 1997-04-14 1997-04-14 Method of filling shallow trenches

Publications (2)

Publication Number Publication Date
DE69802607D1 true DE69802607D1 (de) 2002-01-10
DE69802607T2 DE69802607T2 (de) 2002-07-25

Family

ID=25242118

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69802607T Expired - Lifetime DE69802607T2 (de) 1997-04-14 1998-03-12 Verfahren zum Füllen von nicht tiefen Graben

Country Status (4)

Country Link
US (1) US5804490A (de)
EP (1) EP0872885B1 (de)
JP (1) JP3683705B2 (de)
DE (1) DE69802607T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10125637A (ja) * 1996-10-15 1998-05-15 Toshiba Corp 半導体装置の製造方法
TW334614B (en) * 1997-03-04 1998-06-21 Winbond Electronics Corp The method of forming shallow trench isolation
US6150072A (en) * 1997-08-22 2000-11-21 Siemens Microelectronics, Inc. Method of manufacturing a shallow trench isolation structure for a semiconductor device
US6017803A (en) * 1998-06-24 2000-01-25 Chartered Semiconductor Manufacturing, Ltd. Method to prevent dishing in chemical mechanical polishing
JP2000040737A (ja) * 1998-07-24 2000-02-08 Oki Electric Ind Co Ltd 素子分離領域の形成方法
US6528389B1 (en) * 1998-12-17 2003-03-04 Lsi Logic Corporation Substrate planarization with a chemical mechanical polishing stop layer
US6297126B1 (en) 1999-07-12 2001-10-02 Chartered Semiconductor Manufacturing Ltd. Silicon nitride capped shallow trench isolation method for fabricating sub-micron devices with borderless contacts
US6265302B1 (en) 1999-07-12 2001-07-24 Chartered Semiconductor Manufacturing Ltd. Partially recessed shallow trench isolation method for fabricating borderless contacts
US6472291B1 (en) 2000-01-27 2002-10-29 Infineon Technologies North America Corp. Planarization process to achieve improved uniformity across semiconductor wafers
US6294423B1 (en) 2000-11-21 2001-09-25 Infineon Technologies North America Corp. Method for forming and filling isolation trenches
US6593238B1 (en) 2000-11-27 2003-07-15 Motorola, Inc. Method for determining an endpoint and semiconductor wafer
JP2006005237A (ja) * 2004-06-18 2006-01-05 Sharp Corp 半導体装置の製造方法
US7274073B2 (en) * 2004-10-08 2007-09-25 International Business Machines Corporation Integrated circuit with bulk and SOI devices connected with an epitaxial region
US20070042563A1 (en) * 2005-08-19 2007-02-22 Honeywell International Inc. Single crystal based through the wafer connections technical field
US8119489B2 (en) * 2008-03-28 2012-02-21 United Microelectronics Corp. Method of forming a shallow trench isolation structure having a polysilicon capping layer
US8728891B2 (en) 2010-09-21 2014-05-20 Infineon Technologies Austria Ag Method for producing contact openings in a semiconductor body and self-aligned contact structures on a semiconductor body
DE102010046213B3 (de) 2010-09-21 2012-02-09 Infineon Technologies Austria Ag Verfahren zur Herstellung eines Strukturelements und Halbleiterbauelement mit einem Strukturelement

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4389294A (en) * 1981-06-30 1983-06-21 International Business Machines Corporation Method for avoiding residue on a vertical walled mesa
NL8701717A (nl) * 1987-07-21 1989-02-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een geplanariseerde opbouw.
US4791073A (en) * 1987-11-17 1988-12-13 Motorola Inc. Trench isolation method for semiconductor devices
US4962064A (en) * 1988-05-12 1990-10-09 Advanced Micro Devices, Inc. Method of planarization of topologies in integrated circuit structures
EP0424608B1 (de) * 1989-10-25 1993-12-01 International Business Machines Corporation Verfahren zur Herstellung breiter mit Dielektrikum gefüllter Isolationsgraben für Halbleiteranordnungen

Also Published As

Publication number Publication date
EP0872885A2 (de) 1998-10-21
US5804490A (en) 1998-09-08
DE69802607T2 (de) 2002-07-25
EP0872885B1 (de) 2001-11-28
JPH10294362A (ja) 1998-11-04
JP3683705B2 (ja) 2005-08-17
EP0872885A3 (de) 1999-06-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)