DE69738183D1 - Infrarotdetektor - Google Patents

Infrarotdetektor

Info

Publication number
DE69738183D1
DE69738183D1 DE69738183T DE69738183T DE69738183D1 DE 69738183 D1 DE69738183 D1 DE 69738183D1 DE 69738183 T DE69738183 T DE 69738183T DE 69738183 T DE69738183 T DE 69738183T DE 69738183 D1 DE69738183 D1 DE 69738183D1
Authority
DE
Germany
Prior art keywords
infrared detector
infrared
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69738183T
Other languages
English (en)
Other versions
DE69738183T2 (de
Inventor
Carl John Anthony
Kevin Michael Brunson
Charles Thomas Elliott
Neil Thomson Gordon
Timothy Jonathan Phillips
Michael John Uren
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qinetiq Ltd
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Publication of DE69738183D1 publication Critical patent/DE69738183D1/de
Application granted granted Critical
Publication of DE69738183T2 publication Critical patent/DE69738183T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
DE69738183T 1996-11-14 1997-11-06 Infrarotdetektor Expired - Fee Related DE69738183T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB9623704.5A GB9623704D0 (en) 1996-11-14 1996-11-14 Infra-red detector
GB9623704 1996-11-14
PCT/GB1997/003053 WO1998021757A1 (en) 1996-11-14 1997-11-06 Infra-red detector

Publications (2)

Publication Number Publication Date
DE69738183D1 true DE69738183D1 (de) 2007-11-15
DE69738183T2 DE69738183T2 (de) 2008-02-07

Family

ID=10802932

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69738183T Expired - Fee Related DE69738183T2 (de) 1996-11-14 1997-11-06 Infrarotdetektor

Country Status (6)

Country Link
US (1) US6420707B1 (de)
EP (1) EP0946992B1 (de)
JP (1) JP3926851B2 (de)
DE (1) DE69738183T2 (de)
GB (1) GB9623704D0 (de)
WO (1) WO1998021757A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6633716B2 (en) * 2001-05-02 2003-10-14 Motorola, Inc. Optical device and method therefor
US8564544B2 (en) 2006-09-06 2013-10-22 Apple Inc. Touch screen device, method, and graphical user interface for customizing display of content category icons
US9304675B2 (en) 2006-09-06 2016-04-05 Apple Inc. Portable electronic device for instant messaging
EP2095214B1 (de) 2006-10-26 2019-07-10 Apple Inc. Tragbares multifunktionsgerät, verfahren und grafische benutzeroberfläche zum einstellen einer einfügepunktmarkierung
CH709726B1 (de) * 2013-04-04 2018-05-15 Hamamatsu Photonics Kk Halbleiterphotosensor für Infrarotstrahlung.
US20160247956A1 (en) * 2015-02-20 2016-08-25 Dee-Son Pan Transistor Barrier-Controlled Internal Photoemission Detector

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3863070A (en) * 1972-05-04 1975-01-28 Robert H Wheeler Quantum mechanical mosfet infrared radiation detector
GB1488258A (en) 1974-11-27 1977-10-12 Secr Defence Thermal radiation imaging devices and systems
US4429330A (en) * 1980-04-18 1984-01-31 Texas Instruments Incorporated Infrared matrix using transfer gates
US5248884A (en) 1983-10-11 1993-09-28 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Infrared detectors
US4803537A (en) * 1984-01-13 1989-02-07 Texas Instruments Incorporated Infrared detector system based upon group III-V epitaxial material
GB8417303D0 (en) 1984-07-06 1984-08-08 Secr Defence Infra-red detector
US5525828A (en) * 1991-10-31 1996-06-11 International Business Machines Corporation High speed silicon-based lateral junction photodetectors having recessed electrodes and thick oxide to reduce fringing fields

Also Published As

Publication number Publication date
WO1998021757A1 (en) 1998-05-22
GB9623704D0 (en) 1997-01-08
EP0946992A1 (de) 1999-10-06
JP3926851B2 (ja) 2007-06-06
EP0946992B1 (de) 2007-10-03
DE69738183T2 (de) 2008-02-07
JP2001504274A (ja) 2001-03-27
US6420707B1 (en) 2002-07-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee