DE69734447D1 - Stabilisierung der grenzfläche zwischen tin und al legierungen - Google Patents

Stabilisierung der grenzfläche zwischen tin und al legierungen

Info

Publication number
DE69734447D1
DE69734447D1 DE69734447T DE69734447T DE69734447D1 DE 69734447 D1 DE69734447 D1 DE 69734447D1 DE 69734447 T DE69734447 T DE 69734447T DE 69734447 T DE69734447 T DE 69734447T DE 69734447 D1 DE69734447 D1 DE 69734447D1
Authority
DE
Germany
Prior art keywords
alloys
stabilization
tin
border area
border
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69734447T
Other languages
English (en)
Other versions
DE69734447T2 (de
Inventor
Luc Ouellet
Yves Tremblay
Luc Gendron
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne Digital Imaging Inc
Original Assignee
Dalsa Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dalsa Semiconductor Inc filed Critical Dalsa Semiconductor Inc
Application granted granted Critical
Publication of DE69734447D1 publication Critical patent/DE69734447D1/de
Publication of DE69734447T2 publication Critical patent/DE69734447T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69734447T 1996-11-26 1997-11-26 Stabilisierung der grenzfläche zwischen tin und al legierungen Expired - Lifetime DE69734447T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CA2191260 1996-11-26
CA002191260A CA2191260A1 (en) 1996-11-26 1996-11-26 Stabilization of the interface between tin and a1 alloys
PCT/CA1997/000895 WO1998024116A1 (en) 1996-11-26 1997-11-26 STABILIZATION OF THE INTERFACE BETWEEN TiN AND A1 ALLOYS

Publications (2)

Publication Number Publication Date
DE69734447D1 true DE69734447D1 (de) 2005-12-01
DE69734447T2 DE69734447T2 (de) 2006-07-13

Family

ID=4159317

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69734447T Expired - Lifetime DE69734447T2 (de) 1996-11-26 1997-11-26 Stabilisierung der grenzfläche zwischen tin und al legierungen

Country Status (7)

Country Link
US (1) US6127266A (de)
EP (1) EP0902968B1 (de)
JP (1) JPH11509692A (de)
KR (1) KR19990081964A (de)
CA (1) CA2191260A1 (de)
DE (1) DE69734447T2 (de)
WO (1) WO1998024116A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3528665B2 (ja) 1998-10-20 2004-05-17 セイコーエプソン株式会社 半導体装置の製造方法
JP3533968B2 (ja) 1998-12-22 2004-06-07 セイコーエプソン株式会社 半導体装置の製造方法
US6191023B1 (en) * 1999-11-18 2001-02-20 Taiwan Semiconductor Manufacturing Company Method of improving copper pad adhesion
US20040157426A1 (en) * 2003-02-07 2004-08-12 Luc Ouellet Fabrication of advanced silicon-based MEMS devices
KR101231528B1 (ko) * 2008-11-14 2013-02-07 가부시키가이샤 아루박 진공 배기 장치, 진공 처리 장치 및 진공 처리 방법
US9190549B2 (en) 2012-02-28 2015-11-17 International Business Machines Corporation Solar cell made using a barrier layer between p-type and intrinsic layers
JP5960491B2 (ja) * 2012-04-27 2016-08-02 キヤノンアネルバ株式会社 半導体装置およびその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5232871A (en) * 1990-12-27 1993-08-03 Intel Corporation Method for forming a titanium nitride barrier layer
US5747361A (en) * 1991-05-01 1998-05-05 Mitel Corporation Stabilization of the interface between aluminum and titanium nitride
US5514908A (en) * 1994-04-29 1996-05-07 Sgs-Thomson Microelectronics, Inc. Integrated circuit with a titanium nitride contact barrier having oxygen stuffed grain boundaries
JPH08130302A (ja) * 1994-10-31 1996-05-21 Toshiba Corp 半導体装置及びその製造方法
US5605724A (en) * 1995-03-20 1997-02-25 Texas Instruments Incorporated Method of forming a metal conductor and diffusion layer
US5685960A (en) * 1995-11-27 1997-11-11 Applied Materials, Inc. Method for forming aluminum contacts
US5895266A (en) * 1996-02-26 1999-04-20 Applied Materials, Inc. Titanium nitride barrier layers
EP1028173A3 (de) * 1996-02-26 2000-11-02 Applied Materials, Inc. Barriereschichten aus Titannitrid

Also Published As

Publication number Publication date
US6127266A (en) 2000-10-03
EP0902968A1 (de) 1999-03-24
WO1998024116A1 (en) 1998-06-04
DE69734447T2 (de) 2006-07-13
KR19990081964A (ko) 1999-11-15
CA2191260A1 (en) 1998-05-26
EP0902968B1 (de) 2005-10-26
JPH11509692A (ja) 1999-08-24

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Legal Events

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