DE69725834D1 - Focalebenenmatrix und Ansteuerungsverfahren davon - Google Patents

Focalebenenmatrix und Ansteuerungsverfahren davon

Info

Publication number
DE69725834D1
DE69725834D1 DE69725834T DE69725834T DE69725834D1 DE 69725834 D1 DE69725834 D1 DE 69725834D1 DE 69725834 T DE69725834 T DE 69725834T DE 69725834 T DE69725834 T DE 69725834T DE 69725834 D1 DE69725834 D1 DE 69725834D1
Authority
DE
Germany
Prior art keywords
control method
focal plane
plane matrix
matrix
focal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69725834T
Other languages
English (en)
Other versions
DE69725834T2 (de
Inventor
Masafumi Kimata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69725834D1 publication Critical patent/DE69725834D1/de
Application granted granted Critical
Publication of DE69725834T2 publication Critical patent/DE69725834T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE69725834T 1996-12-24 1997-11-18 Focalebenenmatrix und Ansteuerungsverfahren davon Expired - Fee Related DE69725834T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34316796 1996-12-24
JP34316796 1996-12-24

Publications (2)

Publication Number Publication Date
DE69725834D1 true DE69725834D1 (de) 2003-12-04
DE69725834T2 DE69725834T2 (de) 2004-08-19

Family

ID=18359436

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69725834T Expired - Fee Related DE69725834T2 (de) 1996-12-24 1997-11-18 Focalebenenmatrix und Ansteuerungsverfahren davon

Country Status (4)

Country Link
US (1) US5998778A (de)
EP (1) EP0851497B1 (de)
KR (1) KR100263500B1 (de)
DE (1) DE69725834T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1209930A (zh) 1996-10-31 1999-03-03 马库斯·伯姆 用于短期曝光的彩色图象传感器
JPH10191184A (ja) * 1996-12-20 1998-07-21 Olympus Optical Co Ltd 固体撮像装置
AU740862B2 (en) 1997-12-18 2001-11-15 Mitsubishi Denki Kabushiki Kaisha Infrared solid state image sensing device
JP3924754B2 (ja) * 2001-06-06 2007-06-06 本田技研工業株式会社 イメージセンサ
US7165745B2 (en) 2003-01-17 2007-01-23 The Insitu Group, Inc. Methods and apparatuses for launching unmanned aircraft, including releasably gripping aircraft during launch and braking subsequent grip motion
CN112763078B (zh) * 2020-12-23 2022-11-01 杭州海康微影传感科技有限公司 一种非制冷红外焦平面阵列探测器的信号读出电路及方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0091678A3 (de) * 1982-04-12 1984-11-28 Matsushita Electric Industrial Co., Ltd. Festkörper-Fernsehaufnahmeeinrichtung
JPS58210663A (ja) * 1982-06-01 1983-12-07 Mitsubishi Electric Corp 固体撮像装置
JPS5931056A (ja) * 1982-08-13 1984-02-18 Mitsubishi Electric Corp 固体撮像素子
EP0251790A3 (de) * 1986-07-04 1989-11-23 Hitachi, Ltd. Festkörperbildaufnahme-Vorrichtung
JP3173851B2 (ja) * 1992-04-13 2001-06-04 三菱電機株式会社 Ｃｓｄ方式の固体撮像装置
JP2546514B2 (ja) * 1993-09-16 1996-10-23 日本電気株式会社 信号読み出し回路とその駆動方式
JP3687124B2 (ja) * 1995-02-23 2005-08-24 三菱電機株式会社 固体撮像素子及びその駆動方法
US5717199A (en) * 1996-01-26 1998-02-10 Cid Technologies, Inc. Collective charge reading and injection in random access charge transfer devices

Also Published As

Publication number Publication date
KR100263500B1 (ko) 2000-08-01
DE69725834T2 (de) 2004-08-19
EP0851497A2 (de) 1998-07-01
EP0851497B1 (de) 2003-10-29
KR19980063463A (ko) 1998-10-07
US5998778A (en) 1999-12-07
EP0851497A3 (de) 2000-05-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee