DE69710542T2 - Ätzlösung für Polyimide und Ätzverfahren - Google Patents

Ätzlösung für Polyimide und Ätzverfahren

Info

Publication number
DE69710542T2
DE69710542T2 DE1997610542 DE69710542T DE69710542T2 DE 69710542 T2 DE69710542 T2 DE 69710542T2 DE 1997610542 DE1997610542 DE 1997610542 DE 69710542 T DE69710542 T DE 69710542T DE 69710542 T2 DE69710542 T2 DE 69710542T2
Authority
DE
Germany
Prior art keywords
etching
polyimides
processes
solution
etching solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1997610542
Other languages
English (en)
Other versions
DE69710542D1 (de
Inventor
Atsushi Suzuki
Mayumi Aimoto
Takashi Kubota
Masanori Akita
Koji Itoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toray Engineering Co Ltd
Original Assignee
Toray Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP27167696A external-priority patent/JP3251515B2/ja
Priority claimed from JP1462797A external-priority patent/JPH10195214A/ja
Application filed by Toray Engineering Co Ltd filed Critical Toray Engineering Co Ltd
Publication of DE69710542D1 publication Critical patent/DE69710542D1/de
Application granted granted Critical
Publication of DE69710542T2 publication Critical patent/DE69710542T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/12—Chemical modification
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/002—Etching of the substrate by chemical or physical means by liquid chemical etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/032—Organic insulating material consisting of one material
    • H05K1/0346—Organic insulating material consisting of one material containing N
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0154—Polyimide
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
    • H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
    • H05K2203/0793—Aqueous alkaline solution, e.g. for cleaning or etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/258—Alkali metal or alkaline earth metal or compound thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Wire Bonding (AREA)
DE1997610542 1996-09-20 1997-09-22 Ätzlösung für Polyimide und Ätzverfahren Expired - Fee Related DE69710542T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP27167696A JP3251515B2 (ja) 1996-09-20 1996-09-20 樹脂エッチング液及びエッチング方法
JP1462797A JPH10195214A (ja) 1997-01-10 1997-01-10 樹脂エッチング液及びエッチング方法

Publications (2)

Publication Number Publication Date
DE69710542D1 DE69710542D1 (de) 2002-03-28
DE69710542T2 true DE69710542T2 (de) 2002-08-08

Family

ID=26350609

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1997610542 Expired - Fee Related DE69710542T2 (de) 1996-09-20 1997-09-22 Ätzlösung für Polyimide und Ätzverfahren

Country Status (6)

Country Link
US (1) US6218022B1 (de)
EP (1) EP0832918B1 (de)
KR (1) KR100495906B1 (de)
CN (1) CN1119700C (de)
DE (1) DE69710542T2 (de)
TW (1) TW404960B (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000006831A (ko) * 1999-11-05 2000-02-07 윤세훈 수용성 포지티브 스트리퍼의 조성
US20040043232A1 (en) 2000-06-21 2004-03-04 Katsuya Sakayori Laminate and use thereof
JP3765970B2 (ja) * 2000-07-12 2006-04-12 ソニーケミカル株式会社 エッチング液及びフレキシブル配線板の製造方法
US6696163B2 (en) 2000-07-18 2004-02-24 3M Innovative Properties Company Liquid crystal polymers for flexible circuits
US6923919B2 (en) * 2000-07-18 2005-08-02 3M Innovative Properties Company Liquid crystal polymers for flexible circuits
US6403211B1 (en) 2000-07-18 2002-06-11 3M Innovative Properties Company Liquid crystal polymer for flexible circuits
US6461681B2 (en) * 2001-01-08 2002-10-08 Hewlett-Packard Company Method of treating a surface of a polyimide
KR100878863B1 (ko) * 2001-02-21 2009-01-15 가부시키가이샤 가네카 배선기판 및 그 제조 방법, 및 그 배선기판에 사용되는폴리이미드 필름 및 그 제조 방법에 사용되는 에칭액
JP3592285B2 (ja) 2001-06-28 2004-11-24 住友電気工業株式会社 ポリイミド層を含む積層体のエッチング方法
JP2004079826A (ja) * 2002-08-20 2004-03-11 Nippon Steel Chem Co Ltd 配線基板用積層体
KR100956350B1 (ko) * 2003-07-07 2010-05-07 삼성전자주식회사 습식 식각 장치
US20050186404A1 (en) * 2004-02-23 2005-08-25 Guoping Mao Etched polycarbonate films
WO2006004989A2 (en) 2004-06-30 2006-01-12 University Of South Florida Methof for etching microchannel networks within liquid crystal polymer substrates
US20090280339A1 (en) * 2005-04-08 2009-11-12 Mitsui Chemicals ,Inc. Polyimide film, polyimide metal laminate using same, and method for manufacturing same
KR100955552B1 (ko) * 2005-06-03 2010-04-30 미쓰이 가가쿠 가부시키가이샤 폴리이미드 필름, 폴리이미드 금속 적층체 및 그의제조방법
US20070120089A1 (en) * 2005-11-28 2007-05-31 3M Innovative Properties Company Polymer etchant and method of using same
TWI271390B (en) * 2005-12-13 2007-01-21 Ind Tech Res Inst Non-mask micro-flow etching process
JP5224228B2 (ja) * 2006-09-15 2013-07-03 Ｎｌｔテクノロジー株式会社 薬液を用いた基板処理方法
US8049112B2 (en) * 2007-04-13 2011-11-01 3M Innovative Properties Company Flexible circuit with cover layer
US9393720B2 (en) * 2009-08-20 2016-07-19 Ube Industries, Ltd. Polyimide film and process for producing polyimide film
US20110048931A1 (en) * 2009-08-25 2011-03-03 Makarov Vladimir V FIB Process for Selective and Clean Etching of Copper
US20110048929A1 (en) * 2009-08-25 2011-03-03 Makarov Vladimir V FIB Process for Selective and Clean Etching of Copper
WO2011052941A2 (en) * 2009-10-26 2011-05-05 Dongwoo Fine-Chem Co., Ltd. Etching composition for texturing crystalline silicon-based wafer
JP2014503607A (ja) 2010-11-03 2014-02-13 スリーエム イノベイティブ プロパティズ カンパニー ポリマーエッチング剤及びその使用方法
CN105511219B (zh) * 2015-12-23 2019-06-14 中国科学院高能物理研究所 一种用于软x射线曝光的掩膜的制备方法
CN110856357A (zh) * 2019-11-15 2020-02-28 江苏上达电子有限公司 一种新的线路成形的方法
CN113736466B (zh) * 2020-05-29 2023-05-12 新应材股份有限公司 蚀刻剂组合物、增粘剂、移除聚酰亚胺的方法以及蚀刻工艺

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3395057A (en) 1964-12-08 1968-07-30 G T Schjeladhl Company Method for etching polyiminde plastic film
JPS6014776B2 (ja) 1979-05-30 1985-04-16 三井金属鉱業株式会社 ポリイミドフイルムおよびポリパラバン酸フイルムのエツチング方法
SU863718A1 (ru) 1979-12-17 1981-09-15 Предприятие П/Я Г-4086 Состав дл травлени алюмини и его сплавов
US4426253A (en) * 1981-12-03 1984-01-17 E. I. Du Pont De Nemours & Co. High speed etching of polyimide film
JPS6385602A (ja) 1986-09-30 1988-04-16 Minolta Camera Co Ltd カラ−フイルタ−の製造方法
US4857143A (en) 1988-12-16 1989-08-15 International Business Machines Corp. Wet etching of cured polyimide
JP2924026B2 (ja) 1989-06-20 1999-07-26 宇部興産株式会社 ポリイミド樹脂のエッチング法
EP0404049A3 (de) 1989-06-20 1992-04-15 Ube Industries, Ltd. Verfahren zum Ätzen von Polyimidharz
SU1680142A1 (ru) 1989-06-27 1991-09-30 Свердловский медицинский институт Способ металлизации пластмассовых зубных протезов
JPH03292337A (ja) 1990-04-11 1991-12-24 Sumitomo Metal Mining Co Ltd ポリイミドフィルムのエッチング方法
JPH0420539A (ja) 1990-05-16 1992-01-24 Sumitomo Metal Mining Co Ltd ポリイミドフィルムのエッチング方法
JPH05202206A (ja) 1991-10-03 1993-08-10 Mitsubishi Shindoh Co Ltd ポリイミド樹脂のエッチング液およびエッチング方法
JP3186834B2 (ja) 1992-04-28 2001-07-11 住友金属鉱山株式会社 ポリイミド樹脂溶解用エッチング液およびそれを使用したスルーホールのエッチング加工方法
US5502143A (en) * 1992-12-25 1996-03-26 Pi Material Research Laboratory Process for preparing polyimide resins
JP3126577B2 (ja) 1993-12-02 2001-01-22 パーカー加工株式会社 ポリイミドブロック共重合体の製造方法及びその溶液組成物
JPH06234870A (ja) * 1993-02-09 1994-08-23 Central Glass Co Ltd ポリイミドのエッチング液およびその使用方法
JPH07221457A (ja) 1994-02-03 1995-08-18 Oki Electric Ind Co Ltd ポリイミド薄膜のビアホール形成方法
KR0126792B1 (ko) * 1994-04-11 1998-04-01 김광호 폴리이미드(Polyimide) 표면 처리방법
JP3101228B2 (ja) 1997-03-03 2000-10-23 株式会社橋梁メンテナンス フィンガージョイントの補填装置

Also Published As

Publication number Publication date
DE69710542D1 (de) 2002-03-28
CN1177751A (zh) 1998-04-01
KR19980024804A (ko) 1998-07-06
EP0832918B1 (de) 2002-02-20
US6218022B1 (en) 2001-04-17
TW404960B (en) 2000-09-11
CN1119700C (zh) 2003-08-27
KR100495906B1 (ko) 2005-09-26
EP0832918A1 (de) 1998-04-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee