DE69709214T2 - Bestimmen des Endes eines chemisch-mechanischen Planiervorganges mittels Frequenz- oder Amplitudenmodus - Google Patents

Bestimmen des Endes eines chemisch-mechanischen Planiervorganges mittels Frequenz- oder Amplitudenmodus

Info

Publication number
DE69709214T2
DE69709214T2 DE69709214T DE69709214T DE69709214T2 DE 69709214 T2 DE69709214 T2 DE 69709214T2 DE 69709214 T DE69709214 T DE 69709214T DE 69709214 T DE69709214 T DE 69709214T DE 69709214 T2 DE69709214 T2 DE 69709214T2
Authority
DE
Germany
Prior art keywords
chemical
frequency
determining
leveling process
amplitude mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69709214T
Other languages
English (en)
Other versions
DE69709214D1 (de
Inventor
Leping Li
Steven G Barbee
Arnold Halperin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69709214D1 publication Critical patent/DE69709214D1/de
Publication of DE69709214T2 publication Critical patent/DE69709214T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
    • G01B7/10—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using magnetic means, e.g. by measuring change of reluctance
    • G01B7/105—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using magnetic means, e.g. by measuring change of reluctance for measuring thickness of coating

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE69709214T 1996-03-19 1997-03-05 Bestimmen des Endes eines chemisch-mechanischen Planiervorganges mittels Frequenz- oder Amplitudenmodus Expired - Lifetime DE69709214T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/620,722 US5644221A (en) 1996-03-19 1996-03-19 Endpoint detection for chemical mechanical polishing using frequency or amplitude mode

Publications (2)

Publication Number Publication Date
DE69709214D1 DE69709214D1 (de) 2002-01-31
DE69709214T2 true DE69709214T2 (de) 2002-08-22

Family

ID=24487111

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69709214T Expired - Lifetime DE69709214T2 (de) 1996-03-19 1997-03-05 Bestimmen des Endes eines chemisch-mechanischen Planiervorganges mittels Frequenz- oder Amplitudenmodus

Country Status (4)

Country Link
US (1) US5644221A (de)
EP (1) EP0800896B1 (de)
JP (1) JP3180051B2 (de)
DE (1) DE69709214T2 (de)

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DE112004001051B4 (de) * 2003-06-18 2016-11-17 Ebara Corp. Substratpoliervorrichtung und Substratpolierverfahren

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US6108093A (en) * 1997-06-04 2000-08-22 Lsi Logic Corporation Automated inspection system for residual metal after chemical-mechanical polishing
JPH1187286A (ja) 1997-09-05 1999-03-30 Lsi Logic Corp 半導体ウエハの二段階式化学的機械的研磨方法及び装置
US6234883B1 (en) 1997-10-01 2001-05-22 Lsi Logic Corporation Method and apparatus for concurrent pad conditioning and wafer buff in chemical mechanical polishing
US6531397B1 (en) 1998-01-09 2003-03-11 Lsi Logic Corporation Method and apparatus for using across wafer back pressure differentials to influence the performance of chemical mechanical polishing
US6060370A (en) 1998-06-16 2000-05-09 Lsi Logic Corporation Method for shallow trench isolations with chemical-mechanical polishing
US6077783A (en) * 1998-06-30 2000-06-20 Lsi Logic Corporation Method and apparatus for detecting a polishing endpoint based upon heat conducted through a semiconductor wafer
US6071818A (en) * 1998-06-30 2000-06-06 Lsi Logic Corporation Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material
US6241847B1 (en) 1998-06-30 2001-06-05 Lsi Logic Corporation Method and apparatus for detecting a polishing endpoint based upon infrared signals
US6268224B1 (en) 1998-06-30 2001-07-31 Lsi Logic Corporation Method and apparatus for detecting an ion-implanted polishing endpoint layer within a semiconductor wafer
US6066266A (en) * 1998-07-08 2000-05-23 Lsi Logic Corporation In-situ chemical-mechanical polishing slurry formulation for compensation of polish pad degradation
US6285035B1 (en) 1998-07-08 2001-09-04 Lsi Logic Corporation Apparatus for detecting an endpoint polishing layer of a semiconductor wafer having a wafer carrier with independent concentric sub-carriers and associated method
US6074517A (en) * 1998-07-08 2000-06-13 Lsi Logic Corporation Method and apparatus for detecting an endpoint polishing layer by transmitting infrared light signals through a semiconductor wafer
US20030206114A1 (en) * 1998-08-04 2003-11-06 Leping Li Interface device for sti/bpsg EPD and real time control
US6080670A (en) * 1998-08-10 2000-06-27 Lsi Logic Corporation Method of detecting a polishing endpoint layer of a semiconductor wafer which includes a non-reactive reporting specie
US6201253B1 (en) 1998-10-22 2001-03-13 Lsi Logic Corporation Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical system
US6121147A (en) * 1998-12-11 2000-09-19 Lsi Logic Corporation Apparatus and method of detecting a polishing endpoint layer of a semiconductor wafer which includes a metallic reporting substance
US6117779A (en) 1998-12-15 2000-09-12 Lsi Logic Corporation Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint
US6528389B1 (en) 1998-12-17 2003-03-04 Lsi Logic Corporation Substrate planarization with a chemical mechanical polishing stop layer
US6179688B1 (en) * 1999-03-17 2001-01-30 Advanced Micro Devices, Inc. Method and apparatus for detecting the endpoint of a chemical-mechanical polishing operation
US6213846B1 (en) * 1999-07-12 2001-04-10 International Business Machines Corporation Real-time control of chemical-mechanical polishing processes using a shaft distortion measurement
US6433541B1 (en) 1999-12-23 2002-08-13 Kla-Tencor Corporation In-situ metalization monitoring using eddy current measurements during the process for removing the film
US6707540B1 (en) 1999-12-23 2004-03-16 Kla-Tencor Corporation In-situ metalization monitoring using eddy current and optical measurements
US7751609B1 (en) 2000-04-20 2010-07-06 Lsi Logic Corporation Determination of film thickness during chemical mechanical polishing
EP1618991B1 (de) * 2000-05-19 2008-01-09 Applied Materials, Inc. Polierkissen
DE60116757T4 (de) * 2000-05-19 2007-01-18 Applied Materials, Inc., Santa Clara Verfahren und vorrichtung zur "in-situ" überwachung der dicke während des chemisch-mechanischen planiervorganges
US7374477B2 (en) * 2002-02-06 2008-05-20 Applied Materials, Inc. Polishing pads useful for endpoint detection in chemical mechanical polishing
US6924641B1 (en) * 2000-05-19 2005-08-02 Applied Materials, Inc. Method and apparatus for monitoring a metal layer during chemical mechanical polishing
US20020023715A1 (en) * 2000-05-26 2002-02-28 Norio Kimura Substrate polishing apparatus and substrate polishing mehod
US6450859B1 (en) 2000-09-29 2002-09-17 International Business Machines Corporation Method and apparatus for abrading a substrate
US6923711B2 (en) 2000-10-17 2005-08-02 Speedfam-Ipec Corporation Multizone carrier with process monitoring system for chemical-mechanical planarization tool
TW541425B (en) * 2000-10-20 2003-07-11 Ebara Corp Frequency measuring device, polishing device using the same and eddy current sensor
US6608495B2 (en) 2001-03-19 2003-08-19 Applied Materials, Inc. Eddy-optic sensor for object inspection
US6966816B2 (en) * 2001-05-02 2005-11-22 Applied Materials, Inc. Integrated endpoint detection system with optical and eddy current monitoring
US6811466B1 (en) * 2001-12-28 2004-11-02 Applied Materials, Inc. System and method for in-line metal profile measurement
JP4032740B2 (ja) * 2001-12-28 2008-01-16 松下電器産業株式会社 半導体研磨装置及び半導体基板の研磨方法
TW544795B (en) * 2002-02-25 2003-08-01 Nat Science Council Method for monitoring end point of electrolyzing polishing process
US7016795B2 (en) * 2003-02-04 2006-03-21 Applied Materials Inc. Signal improvement in eddy current sensing
US6945845B2 (en) * 2003-03-04 2005-09-20 Applied Materials, Inc. Chemical mechanical polishing apparatus with non-conductive elements
US7008296B2 (en) * 2003-06-18 2006-03-07 Applied Materials, Inc. Data processing for monitoring chemical mechanical polishing
JP2005015885A (ja) * 2003-06-27 2005-01-20 Ebara Corp 基板処理方法及び装置
US7112960B2 (en) * 2003-07-31 2006-09-26 Applied Materials, Inc. Eddy current system for in-situ profile measurement
KR200338320Y1 (ko) * 2003-10-11 2004-01-13 최민우 흡착구
JP4451111B2 (ja) * 2003-10-20 2010-04-14 株式会社荏原製作所 渦電流センサ
US20060105676A1 (en) * 2004-11-17 2006-05-18 International Business Machines Corporation Robust Signal Processing Algorithm For End-Pointing Chemical-Mechanical Polishing Processes
JP4996331B2 (ja) * 2007-05-17 2012-08-08 株式会社荏原製作所 基板研磨装置および基板研磨方法
US8337278B2 (en) * 2007-09-24 2012-12-25 Applied Materials, Inc. Wafer edge characterization by successive radius measurements
JP5611214B2 (ja) 2008-10-16 2014-10-22 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 渦電流利得の補償
JP5615831B2 (ja) * 2008-11-14 2014-10-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 縁部分解能強化渦電流センサ
NZ598827A (en) * 2009-09-22 2014-03-28 Adem Llc Impedance sensing systems and methods for use in measuring constituents in solid and fluid objects
US20120167392A1 (en) * 2010-12-30 2012-07-05 Stmicroelectronics Pte. Ltd. Razor with chemical and biological sensor
US9528814B2 (en) 2011-05-19 2016-12-27 NeoVision, LLC Apparatus and method of using impedance resonance sensor for thickness measurement
US9465089B2 (en) 2011-12-01 2016-10-11 Neovision Llc NMR spectroscopy device based on resonance type impedance (IR) sensor and method of NMR spectra acquisition
US8952708B2 (en) 2011-12-02 2015-02-10 Neovision Llc Impedance resonance sensor for real time monitoring of different processes and methods of using same
WO2018080764A1 (en) 2016-10-28 2018-05-03 Applied Materials, Inc. Core configuration with alternating posts for in-situ electromagnetic induction monitoring system
TWI816620B (zh) 2017-04-21 2023-09-21 美商應用材料股份有限公司 使用神經網路來監測的拋光裝置
TWI825075B (zh) 2018-04-03 2023-12-11 美商應用材料股份有限公司 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體
TWI828706B (zh) * 2018-06-20 2024-01-11 美商應用材料股份有限公司 用於原位電磁感應監控的基板摻雜補償的方法、電腦程式產品及研磨系統
WO2021231427A1 (en) 2020-05-14 2021-11-18 Applied Materials, Inc. Technique for training neural network for use in in-situ monitoring during polishing and polishing system
CN115038549B (zh) 2020-06-24 2024-03-12 应用材料公司 使用研磨垫磨损补偿的基板层厚度确定
US11794302B2 (en) 2020-12-15 2023-10-24 Applied Materials, Inc. Compensation for slurry composition in in-situ electromagnetic inductive monitoring

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JPS59166801A (ja) * 1983-03-09 1984-09-20 Nippon Kokan Kk <Nkk> 渦電流を利用した差動帰還型距離測定装置
US5017869A (en) * 1989-12-14 1991-05-21 General Electric Company Swept frequency eddy current system for measuring coating thickness
US5081421A (en) * 1990-05-01 1992-01-14 At&T Bell Laboratories In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection
US5212442A (en) * 1992-03-20 1993-05-18 Micron Technology, Inc. Forced substrate test mode for packaged integrated circuits

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112004001051B4 (de) * 2003-06-18 2016-11-17 Ebara Corp. Substratpoliervorrichtung und Substratpolierverfahren

Also Published As

Publication number Publication date
EP0800896A2 (de) 1997-10-15
US5644221A (en) 1997-07-01
JPH09330893A (ja) 1997-12-22
DE69709214D1 (de) 2002-01-31
EP0800896A3 (de) 1997-12-17
JP3180051B2 (ja) 2001-06-25
EP0800896B1 (de) 2001-12-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: EBARA CORP., TOKIO/TOKYO, JP

8328 Change in the person/name/address of the agent

Representative=s name: WAGNER & GEYER PARTNERSCHAFT PATENT- UND RECHTSANW