DE69702825D1 - Verfahren und Vorrichtung zur Fotolackbeschichtung eines Substrats - Google Patents

Verfahren und Vorrichtung zur Fotolackbeschichtung eines Substrats

Info

Publication number
DE69702825D1
DE69702825D1 DE69702825T DE69702825T DE69702825D1 DE 69702825 D1 DE69702825 D1 DE 69702825D1 DE 69702825 T DE69702825 T DE 69702825T DE 69702825 T DE69702825 T DE 69702825T DE 69702825 D1 DE69702825 D1 DE 69702825D1
Authority
DE
Germany
Prior art keywords
substrate
photoresist coating
photoresist
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69702825T
Other languages
English (en)
Other versions
DE69702825T2 (de
Inventor
Timothy Weidman
Dian Sugiarto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69702825D1 publication Critical patent/DE69702825D1/de
Publication of DE69702825T2 publication Critical patent/DE69702825T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/62—Plasma-deposition of organic layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
DE69702825T 1996-11-08 1997-10-13 Verfahren und Vorrichtung zur Fotolackbeschichtung eines Substrats Expired - Lifetime DE69702825T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/745,565 US5885751A (en) 1996-11-08 1996-11-08 Method and apparatus for depositing deep UV photoresist films

Publications (2)

Publication Number Publication Date
DE69702825D1 true DE69702825D1 (de) 2000-09-21
DE69702825T2 DE69702825T2 (de) 2001-03-01

Family

ID=24997244

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69702825T Expired - Lifetime DE69702825T2 (de) 1996-11-08 1997-10-13 Verfahren und Vorrichtung zur Fotolackbeschichtung eines Substrats

Country Status (6)

Country Link
US (2) US5885751A (de)
EP (1) EP0841593B1 (de)
JP (1) JPH10189440A (de)
KR (1) KR100476152B1 (de)
DE (1) DE69702825T2 (de)
TW (1) TW358963B (de)

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US6270948B1 (en) * 1996-08-22 2001-08-07 Kabushiki Kaisha Toshiba Method of forming pattern
US5885751A (en) * 1996-11-08 1999-03-23 Applied Materials, Inc. Method and apparatus for depositing deep UV photoresist films
US6204168B1 (en) 1998-02-02 2001-03-20 Applied Materials, Inc. Damascene structure fabricated using a layer of silicon-based photoresist material
US6515355B1 (en) 1998-09-02 2003-02-04 Micron Technology, Inc. Passivation layer for packaged integrated circuits
US20020039809A1 (en) * 1998-09-03 2002-04-04 Bradley J. Howard Process for using photo-definable layers in the manufacture of semiconductor devices and resulting structures of same
US6323125B1 (en) * 1999-03-29 2001-11-27 Chartered Semiconductor Manufacturing Ltd Simplified dual damascene process utilizing PPMSO as an insulator layer
US6368883B1 (en) * 1999-08-10 2002-04-09 Advanced Micro Devices, Inc. Method for identifying and controlling impact of ambient conditions on photolithography processes
US6221560B1 (en) * 1999-08-12 2001-04-24 Chartered Semiconductor Manufacturing Ltd. Method to enhance global planarization of silicon oxide surface for IC device fabrication
US7378127B2 (en) * 2001-03-13 2008-05-27 Micron Technology, Inc. Chemical vapor deposition methods
US6570256B2 (en) * 2001-07-20 2003-05-27 International Business Machines Corporation Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates
US7229666B2 (en) * 2002-01-22 2007-06-12 Micron Technology, Inc. Chemical vapor deposition method
US6787185B2 (en) * 2002-02-25 2004-09-07 Micron Technology, Inc. Deposition methods for improved delivery of metastable species
US7190871B2 (en) * 2002-04-09 2007-03-13 Massachusetts Institute Of Technology Polysilane thin films for directly patternable waveguides
US6960263B2 (en) * 2002-04-25 2005-11-01 Applied Materials, Inc. Shadow frame with cross beam for semiconductor equipment
US7468104B2 (en) * 2002-05-17 2008-12-23 Micron Technology, Inc. Chemical vapor deposition apparatus and deposition method
US6887521B2 (en) * 2002-08-15 2005-05-03 Micron Technology, Inc. Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices
US20050250346A1 (en) * 2004-05-06 2005-11-10 Applied Materials, Inc. Process and apparatus for post deposition treatment of low k dielectric materials
US20060251827A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. Tandem uv chamber for curing dielectric materials
US20060249175A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. High efficiency UV curing system
JP4035141B2 (ja) * 2005-07-27 2008-01-16 東京ガスケミカル株式会社 アニーリング方法
US7615061B2 (en) * 2006-02-28 2009-11-10 Arthrocare Corporation Bone anchor suture-loading system, method and apparatus
US8021514B2 (en) 2007-07-11 2011-09-20 Applied Materials, Inc. Remote plasma source for pre-treatment of substrates prior to deposition
TW201224190A (en) 2010-10-06 2012-06-16 Applied Materials Inc Atomic layer deposition of photoresist materials and hard mask precursors
KR102173047B1 (ko) * 2013-10-10 2020-11-03 삼성디스플레이 주식회사 기상 증착 장치
US9397051B2 (en) 2013-12-03 2016-07-19 Invensas Corporation Warpage reduction in structures with electrical circuitry

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Publication number Priority date Publication date Assignee Title
JPS56125434A (en) * 1980-03-08 1981-10-01 Mitsubishi Chem Ind Ltd Surface treatment of molded article
FR2591587A1 (fr) * 1985-12-17 1987-06-19 Saint Gobain Vitrage Film organo-mineral depose sur un substrat en verre eventuellement revetu d'une ou plusieurs couches metalliques minces.
JPH06105691B2 (ja) * 1988-09-29 1994-12-21 株式会社富士電機総合研究所 炭素添加非晶質シリコン薄膜の製造方法
CA1334911C (en) * 1989-02-15 1995-03-28 David M. Dobuzinsky Process for the vapor deposition of polysilanes
US5052339A (en) * 1990-10-16 1991-10-01 Air Products And Chemicals, Inc. Radio frequency plasma enhanced chemical vapor deposition process and reactor
US5204272A (en) * 1991-12-13 1993-04-20 United Solar Systems Corporation Semiconductor device and microwave process for its manufacture
US5635338A (en) * 1992-04-29 1997-06-03 Lucent Technologies Inc. Energy sensitive materials and methods for their use
US5439780A (en) * 1992-04-29 1995-08-08 At&T Corp. Energy sensitive materials and methods for their use
KR950009292B1 (ko) * 1992-07-20 1995-08-18 현대전자산업주식회사 실리레이션 레지스트 패턴형성방법
US5290397A (en) * 1992-08-21 1994-03-01 Cornell Research Foundation, Inc. Bilayer resist and process for preparing same
US5355832A (en) * 1992-12-15 1994-10-18 Advanced Surface Technology, Inc. Polymerization reactor
US5550007A (en) * 1993-05-28 1996-08-27 Lucent Technologies Inc. Surface-imaging technique for lithographic processes for device fabrication
US5346803A (en) * 1993-09-15 1994-09-13 Shin-Etsu Chemical Co., Ltd. Photoresist composition comprising a copolymer having a di-t-butyl fumarate
FR2711556B1 (fr) * 1993-10-29 1995-12-15 Atohaas Holding Cv Procédé de dépôt d'une couche mince sur la surface d'un substrat en matière plastique.
JP2643879B2 (ja) * 1994-10-31 1997-08-20 日本電気株式会社 微細パターン形成方法
US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
JPH08195492A (ja) * 1995-01-13 1996-07-30 Matsushita Electric Ind Co Ltd 多結晶薄膜の形成方法および薄膜トランジスタの製造方法
KR970017960A (ko) * 1995-09-11 1997-04-30 윌리엄 이. 힐러 대 표면 영역 실리콘 기판
US5885751A (en) * 1996-11-08 1999-03-23 Applied Materials, Inc. Method and apparatus for depositing deep UV photoresist films

Also Published As

Publication number Publication date
EP0841593A1 (de) 1998-05-13
US6090530A (en) 2000-07-18
JPH10189440A (ja) 1998-07-21
DE69702825T2 (de) 2001-03-01
TW358963B (en) 1999-05-21
KR100476152B1 (ko) 2005-05-16
EP0841593B1 (de) 2000-08-16
US5885751A (en) 1999-03-23
KR19980042187A (ko) 1998-08-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: KIRSCHNER & PARTNER, 81479 MUENCHEN

8328 Change in the person/name/address of the agent

Representative=s name: KIRSCHNER, K., DIPL.-PHYS., PAT.-ANW., 81479 MUENC

8328 Change in the person/name/address of the agent

Representative=s name: PUSCHMANN & BORCHERT, 82041 OBERHACHING