DE69700501T2 - Impfkristall-Halterung - Google Patents

Impfkristall-Halterung

Info

Publication number
DE69700501T2
DE69700501T2 DE69700501T DE69700501T DE69700501T2 DE 69700501 T2 DE69700501 T2 DE 69700501T2 DE 69700501 T DE69700501 T DE 69700501T DE 69700501 T DE69700501 T DE 69700501T DE 69700501 T2 DE69700501 T2 DE 69700501T2
Authority
DE
Germany
Prior art keywords
seed crystal
crystal holder
holder
seed
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69700501T
Other languages
English (en)
Other versions
DE69700501D1 (de
Inventor
Satoshi Soeta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE69700501D1 publication Critical patent/DE69700501D1/de
Application granted granted Critical
Publication of DE69700501T2 publication Critical patent/DE69700501T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/32—Seed holders, e.g. chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
DE69700501T 1996-03-01 1997-02-25 Impfkristall-Halterung Expired - Fee Related DE69700501T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07118996A JP3716874B2 (ja) 1996-03-01 1996-03-01 種結晶保持治具

Publications (2)

Publication Number Publication Date
DE69700501D1 DE69700501D1 (de) 1999-10-21
DE69700501T2 true DE69700501T2 (de) 2000-02-10

Family

ID=13453476

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69700501T Expired - Fee Related DE69700501T2 (de) 1996-03-01 1997-02-25 Impfkristall-Halterung

Country Status (4)

Country Link
US (1) US5851287A (de)
EP (1) EP0792953B1 (de)
JP (1) JP3716874B2 (de)
DE (1) DE69700501T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0879903B1 (de) * 1997-05-21 2001-12-12 Shin-Etsu Handotai Company Limited Silizium-Impfkristall, Verfahren zu seiner Herstellung und Verfahren zur Herstellung eines Silizium-Einkristalls unter Verwendung des Silizium-Impfkristalls
US6183556B1 (en) 1998-10-06 2001-02-06 Seh-America, Inc. Insulating and warming shield for a seed crystal and seed chuck
US6238483B1 (en) 1999-08-31 2001-05-29 Memc Electronic Materials, Inc. Apparatus for supporting a semiconductor ingot during growth
EP2382342A1 (de) * 2008-12-30 2011-11-02 MEMC Singapore Pte. Ltd. Verfahren und ziehanordnungen zum ziehen eines blocks aus multikristallinem silicium aus einer siliciumschmelze
CN108203842A (zh) * 2016-12-20 2018-06-26 深圳市晶格材料科技有限公司 一种晶体生长用易装配低成本籽晶夹头
CN106835264A (zh) * 2017-02-21 2017-06-13 洛阳金诺机械工程有限公司 一种籽晶夹持器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3046029A (en) * 1959-08-07 1962-07-24 Hoffman Electronics Corp Seed crystal holding chucks
US3159408A (en) * 1961-10-05 1964-12-01 Grace W R & Co Chuck
DE1519907C3 (de) * 1966-12-07 1974-01-31 Siemens Ag, 1000 Berlin U. 8000 Muenchen Vorrichtung zum tiegelfreien Zonenschmelzen kristalliner Stäbe
GB1381417A (en) * 1973-09-27 1975-01-22 Mullard Ltd Method of securing articles
US4186173A (en) * 1975-04-11 1980-01-29 Leybold-Heraeus Gmbh & Co. Kg Apparatus for producing monocrystals
JPS5637294A (en) * 1979-09-05 1981-04-10 Ricoh Co Ltd Crystal seed supporting device
US4594127A (en) * 1984-09-17 1986-06-10 General Signal Corporation Method and apparatus for growing crystals

Also Published As

Publication number Publication date
JPH09235184A (ja) 1997-09-09
EP0792953B1 (de) 1999-09-15
EP0792953A1 (de) 1997-09-03
DE69700501D1 (de) 1999-10-21
JP3716874B2 (ja) 2005-11-16
US5851287A (en) 1998-12-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee