DE69618178D1 - Ein integrierter Schaltkreis mit einer Vorrichtung die eine festgelegte Sperrspannungsschwelle und eine Temperaturkompensationsvorrichtung mittels Vbe-Multiplizierer aufweist - Google Patents
Ein integrierter Schaltkreis mit einer Vorrichtung die eine festgelegte Sperrspannungsschwelle und eine Temperaturkompensationsvorrichtung mittels Vbe-Multiplizierer aufweistInfo
- Publication number
- DE69618178D1 DE69618178D1 DE69618178T DE69618178T DE69618178D1 DE 69618178 D1 DE69618178 D1 DE 69618178D1 DE 69618178 T DE69618178 T DE 69618178T DE 69618178 T DE69618178 T DE 69618178T DE 69618178 D1 DE69618178 D1 DE 69618178D1
- Authority
- DE
- Germany
- Prior art keywords
- integrated circuit
- temperature compensation
- voltage threshold
- reverse voltage
- fixed reverse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
- H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP96830276A EP0810503B1 (de) | 1996-05-14 | 1996-05-14 | Ein integrierter Schaltkreis mit einer Vorrichtung die eine festgelegte Sperrspannungsschwelle und eine Temperaturkompensationsvorrichtung mittels Vbe-Multiplizierer aufweist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE69618178D1 true DE69618178D1 (de) | 2002-01-31 |
Family
ID=8225907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69618178T Expired - Lifetime DE69618178D1 (de) | 1996-05-14 | 1996-05-14 | Ein integrierter Schaltkreis mit einer Vorrichtung die eine festgelegte Sperrspannungsschwelle und eine Temperaturkompensationsvorrichtung mittels Vbe-Multiplizierer aufweist |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5949122A (de) |
| EP (1) | EP0810503B1 (de) |
| JP (1) | JPH1051011A (de) |
| DE (1) | DE69618178D1 (de) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE515836C3 (sv) * | 1999-05-17 | 2001-11-06 | Ericsson Telefon Ab L M | Förfarande för tillverkning av en bipolär högfrekvent kiseltransistor samt effekttransistoranordning |
| IT1311309B1 (it) * | 1999-12-10 | 2002-03-12 | St Microelectronics Srl | Resistore verticale integrato ad alta tensione e relativo processo difabbricazione. |
| US6222350B1 (en) | 2000-01-21 | 2001-04-24 | Titan Specialties, Ltd. | High temperature voltage regulator circuit |
| US6713991B1 (en) | 2002-04-24 | 2004-03-30 | Rantec Power Systems Inc. | Bipolar shunt regulator |
| DE10301586B3 (de) * | 2003-01-17 | 2004-02-26 | Micronas Gmbh | Integrierte Schaltung |
| US7508096B1 (en) * | 2007-09-20 | 2009-03-24 | General Electric Company | Switching circuit apparatus having a series conduction path for servicing a load and switching method |
| US10396654B2 (en) | 2017-10-25 | 2019-08-27 | Schneider Electric Solar Inverters Usa, Inc. | Start-up circuit |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6705024A (de) * | 1967-04-08 | 1968-10-09 | ||
| US3723776A (en) * | 1971-12-27 | 1973-03-27 | Us Navy | Temperature compensated zener diode circuit |
| US3953254A (en) * | 1972-11-07 | 1976-04-27 | Thomson-Csf | Method of producing temperature compensated reference diodes utilizing selective epitaxial growth |
| JPS6048765B2 (ja) * | 1977-12-19 | 1985-10-29 | 日本電気株式会社 | 定電圧半導体集積回路 |
| US4564771A (en) * | 1982-07-17 | 1986-01-14 | Robert Bosch Gmbh | Integrated Darlington transistor combination including auxiliary transistor and Zener diode |
| US4749889A (en) * | 1986-11-20 | 1988-06-07 | Rca Licensing Corporation | Temperature compensation apparatus |
| JPH02210860A (ja) * | 1989-02-09 | 1990-08-22 | Fujitsu Ltd | 半導体集積回路装置 |
-
1996
- 1996-05-14 DE DE69618178T patent/DE69618178D1/de not_active Expired - Lifetime
- 1996-05-14 EP EP96830276A patent/EP0810503B1/de not_active Expired - Lifetime
-
1997
- 1997-05-07 JP JP9117247A patent/JPH1051011A/ja active Pending
- 1997-05-12 US US08/854,452 patent/US5949122A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5949122A (en) | 1999-09-07 |
| EP0810503B1 (de) | 2001-12-19 |
| EP0810503A1 (de) | 1997-12-03 |
| JPH1051011A (ja) | 1998-02-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8332 | No legal effect for de |