DE69616994T2 - Lithographisches abtastsystem mit wynne-dyson optik mit zweifältigem strahldurchgang - Google Patents

Lithographisches abtastsystem mit wynne-dyson optik mit zweifältigem strahldurchgang

Info

Publication number
DE69616994T2
DE69616994T2 DE69616994T DE69616994T DE69616994T2 DE 69616994 T2 DE69616994 T2 DE 69616994T2 DE 69616994 T DE69616994 T DE 69616994T DE 69616994 T DE69616994 T DE 69616994T DE 69616994 T2 DE69616994 T2 DE 69616994T2
Authority
DE
Germany
Prior art keywords
wynne
scan system
double radiation
dyson optics
lithographic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69616994T
Other languages
English (en)
Other versions
DE69616994D1 (de
Inventor
C Allen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Etec Systems Inc
Original Assignee
Etec Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Etec Systems Inc filed Critical Etec Systems Inc
Publication of DE69616994D1 publication Critical patent/DE69616994D1/de
Application granted granted Critical
Publication of DE69616994T2 publication Critical patent/DE69616994T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0892—Catadioptric systems specially adapted for the UV
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/008—Systems specially adapted to form image relays or chained systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69616994T 1995-03-22 1996-03-19 Lithographisches abtastsystem mit wynne-dyson optik mit zweifältigem strahldurchgang Expired - Fee Related DE69616994T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/412,232 US5757469A (en) 1995-03-22 1995-03-22 Scanning lithography system haing double pass Wynne-Dyson optics
PCT/US1996/003298 WO1996029630A2 (en) 1995-03-22 1996-03-19 Scanning lithography system having double pass wynne-dyson optics

Publications (2)

Publication Number Publication Date
DE69616994D1 DE69616994D1 (de) 2001-12-20
DE69616994T2 true DE69616994T2 (de) 2002-08-01

Family

ID=23632157

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69616994T Expired - Fee Related DE69616994T2 (de) 1995-03-22 1996-03-19 Lithographisches abtastsystem mit wynne-dyson optik mit zweifältigem strahldurchgang

Country Status (7)

Country Link
US (1) US5757469A (de)
EP (1) EP0815480B1 (de)
JP (1) JPH11503529A (de)
KR (1) KR19980703208A (de)
CA (1) CA2215691C (de)
DE (1) DE69616994T2 (de)
WO (1) WO1996029630A2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5999310A (en) * 1996-07-22 1999-12-07 Shafer; David Ross Ultra-broadband UV microscope imaging system with wide range zoom capability
US5914889A (en) * 1996-09-13 1999-06-22 Lucent Technologies Inc. Method and system for generating a mask layout of an optical integrated circuit
JP3752787B2 (ja) * 1997-07-04 2006-03-08 三菱電機株式会社 マルチスペクトル分光反射光学系
DE19906874C1 (de) * 1999-02-18 2001-01-11 Zeiss Carl Jena Gmbh Relaisoptik für ein Ablenksystem sowie ein Ablenksystem
US7301605B2 (en) * 2000-03-03 2007-11-27 Nikon Corporation Projection exposure apparatus and method, catadioptric optical system and manufacturing method of devices
US6801438B1 (en) 2000-10-24 2004-10-05 Touch Future Technolocy Ltd. Electrical circuit and method of formation
JP4051204B2 (ja) * 2002-01-11 2008-02-20 株式会社オーク製作所 投影露光装置
JP4051278B2 (ja) * 2001-12-26 2008-02-20 株式会社オーク製作所 投影露光装置
US6898025B2 (en) * 2002-06-04 2005-05-24 Pentax Corporation Projection aligner and optical system therefor
US6963390B1 (en) * 2002-07-19 2005-11-08 Litel Instruments In-situ interferometer arrangement
US6952256B2 (en) * 2002-08-30 2005-10-04 Kla-Tencor Technologies Corporation Optical compensation in high numerical aperture photomask inspection systems for inspecting photomasks through thick pellicles
JP3728301B2 (ja) * 2003-05-30 2005-12-21 株式会社オーク製作所 投影光学系
US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
US7023524B2 (en) 2003-12-18 2006-04-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080151365A1 (en) * 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
JP4195674B2 (ja) * 2004-03-31 2008-12-10 株式会社オーク製作所 投影光学系および投影露光装置
US8107162B2 (en) 2004-05-17 2012-01-31 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US20060158615A1 (en) * 2005-01-18 2006-07-20 Williamson David M Catadioptric 1x projection system and method
US9341951B2 (en) 2012-12-21 2016-05-17 Ultratech, Inc. Wynn-dyson imaging system with reduced thermal distortion
US11175487B2 (en) 2017-06-19 2021-11-16 Suss Microtec Photonic Systems Inc. Optical distortion reduction in projection systems
WO2018236770A1 (en) * 2017-06-19 2018-12-27 Suss Microtec Photonic Systems Inc. MAGNIFICATION AND / OR BEAM ORIENTATION COMPENSATION IN OPTICAL SYSTEMS
US11143965B2 (en) 2019-04-30 2021-10-12 Taiwan Semiconductor Manufacturing Company, Ltd. Optical lithography system for patterning semiconductor devices and method of using the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3819265A (en) * 1972-08-02 1974-06-25 Bell Telephone Labor Inc Scanning projection printer apparatus and method
US4171870A (en) * 1977-05-06 1979-10-23 Bell Telephone Laboratories, Incorporated Compact image projection apparatus
EP0354148A3 (de) * 1981-05-15 1990-06-20 General Signal Corporation Vorrichtung zur Projektion einer Bildserie auf die Elemente einer Halbleiterplatte
US4749867A (en) * 1985-04-30 1988-06-07 Canon Kabushiki Kaisha Exposure apparatus
US4748477A (en) * 1985-04-30 1988-05-31 Canon Kabushiki Kaisha Exposure apparatus
US5298939A (en) * 1991-11-04 1994-03-29 Swanson Paul A Method and apparatus for transfer of a reticle pattern onto a substrate by scanning
JPH06118341A (ja) * 1991-11-11 1994-04-28 Topcon Corp 走査型投影装置
US5285236A (en) * 1992-09-30 1994-02-08 Kanti Jain Large-area, high-throughput, high-resolution projection imaging system
US5401934A (en) * 1993-03-08 1995-03-28 International Business Machines Corporation Lens system for scanning laser apparatus

Also Published As

Publication number Publication date
EP0815480B1 (de) 2001-11-14
DE69616994D1 (de) 2001-12-20
CA2215691A1 (en) 1996-09-26
WO1996029630A2 (en) 1996-09-26
KR19980703208A (ko) 1998-10-15
WO1996029630A3 (en) 1996-12-05
EP0815480A2 (de) 1998-01-07
JPH11503529A (ja) 1999-03-26
US5757469A (en) 1998-05-26
CA2215691C (en) 2001-12-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee