DE69615355T2 - Verfahren zur schaffung gleichmässiger dicke und zur kapselung von mikromechanischen anordnungen in halbleiterprozessen - Google Patents

Verfahren zur schaffung gleichmässiger dicke und zur kapselung von mikromechanischen anordnungen in halbleiterprozessen

Info

Publication number
DE69615355T2
DE69615355T2 DE69615355T DE69615355T DE69615355T2 DE 69615355 T2 DE69615355 T2 DE 69615355T2 DE 69615355 T DE69615355 T DE 69615355T DE 69615355 T DE69615355 T DE 69615355T DE 69615355 T2 DE69615355 T2 DE 69615355T2
Authority
DE
Germany
Prior art keywords
enclosing
semiconductor processes
even thickness
creating even
micromechanical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69615355T
Other languages
English (en)
Other versions
DE69615355D1 (de
Inventor
T Kung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Analog Devices Inc
Original Assignee
Analog Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Analog Devices Inc filed Critical Analog Devices Inc
Publication of DE69615355D1 publication Critical patent/DE69615355D1/de
Application granted granted Critical
Publication of DE69615355T2 publication Critical patent/DE69615355T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00611—Processes for the planarisation of structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P1/00—Details of instruments
    • G01P1/02—Housings
    • G01P1/023—Housings for acceleration measuring devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0118—Processes for the planarization of structures
    • B81C2201/0119—Processes for the planarization of structures involving only addition of materials, i.e. additive planarization
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
DE69615355T 1995-04-14 1996-04-09 Verfahren zur schaffung gleichmässiger dicke und zur kapselung von mikromechanischen anordnungen in halbleiterprozessen Expired - Lifetime DE69615355T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/422,036 US5504026A (en) 1995-04-14 1995-04-14 Methods for planarization and encapsulation of micromechanical devices in semiconductor processes
PCT/US1996/004856 WO1996032650A1 (en) 1995-04-14 1996-04-09 Methods for planarization and encapsulation of micromechanical devices in semiconductor processes

Publications (2)

Publication Number Publication Date
DE69615355D1 DE69615355D1 (de) 2001-10-25
DE69615355T2 true DE69615355T2 (de) 2002-07-04

Family

ID=23673124

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69615355T Expired - Lifetime DE69615355T2 (de) 1995-04-14 1996-04-09 Verfahren zur schaffung gleichmässiger dicke und zur kapselung von mikromechanischen anordnungen in halbleiterprozessen

Country Status (4)

Country Link
US (1) US5504026A (de)
EP (1) EP0820599B1 (de)
DE (1) DE69615355T2 (de)
WO (1) WO1996032650A1 (de)

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US5798283A (en) * 1995-09-06 1998-08-25 Sandia Corporation Method for integrating microelectromechanical devices with electronic circuitry
US5963788A (en) * 1995-09-06 1999-10-05 Sandia Corporation Method for integrating microelectromechanical devices with electronic circuitry
US6012336A (en) * 1995-09-06 2000-01-11 Sandia Corporation Capacitance pressure sensor
US6121552A (en) * 1997-06-13 2000-09-19 The Regents Of The University Of Caliofornia Microfabricated high aspect ratio device with an electrical isolation trench
US5867302A (en) * 1997-08-07 1999-02-02 Sandia Corporation Bistable microelectromechanical actuator
US6087701A (en) * 1997-12-23 2000-07-11 Motorola, Inc. Semiconductor device having a cavity and method of making
US6291875B1 (en) 1998-06-24 2001-09-18 Analog Devices Imi, Inc. Microfabricated structures with electrical isolation and interconnections
US6130126A (en) * 1998-06-26 2000-10-10 Texas Instruments Incorporated Self-planarizing DRAM chip avoids edge flaking
US6433401B1 (en) 1999-04-06 2002-08-13 Analog Devices Imi, Inc. Microfabricated structures with trench-isolation using bonded-substrates and cavities
US6527762B1 (en) 1999-08-18 2003-03-04 Microchips, Inc. Thermally-activated microchip chemical delivery devices
US6703679B1 (en) 1999-08-31 2004-03-09 Analog Devices, Imi, Inc. Low-resistivity microelectromechanical structures with co-fabricated integrated circuit
US6472739B1 (en) * 1999-11-15 2002-10-29 Jds Uniphase Corporation Encapsulated microelectromechanical (MEMS) devices
US6720635B1 (en) 1999-12-17 2004-04-13 Motorola, Inc. Electronic component
US6352935B1 (en) 2000-01-18 2002-03-05 Analog Devices, Inc. Method of forming a cover cap for semiconductor wafer devices
US6440766B1 (en) 2000-02-16 2002-08-27 Analog Devices Imi, Inc. Microfabrication using germanium-based release masks
ATE499988T1 (de) * 2000-03-02 2011-03-15 Microchips Inc Mikromechanische geräte und verfahren zur speicherung und zur selektiven exposition von chemikalien
US6484567B1 (en) 2000-08-03 2002-11-26 Symyx Technologies, Inc. Rheometer for rapidly measuring small quantity samples
EP1339312B1 (de) * 2000-10-10 2006-01-04 Microchips, Inc. Mikrochip-reservoir-vorrichtungen mit drahtloser übertragung von energie und daten
US6621137B1 (en) * 2000-10-12 2003-09-16 Intel Corporation MEMS device integrated chip package, and method of making same
CA2432438C (en) 2001-01-09 2011-04-26 Microchips, Inc. Flexible microchip devices for ophthalmic and other applications
US6465280B1 (en) * 2001-03-07 2002-10-15 Analog Devices, Inc. In-situ cap and method of fabricating same for an integrated circuit device
AU2002326304A1 (en) * 2001-05-31 2002-12-16 Massachusetts Institute Of Technology Microchip devices with improved reservoir opening
US20030048036A1 (en) * 2001-08-31 2003-03-13 Lemkin Mark Alan MEMS comb-finger actuator
US7045459B2 (en) * 2002-02-19 2006-05-16 Northrop Grumman Corporation Thin film encapsulation of MEMS devices
US6824278B2 (en) * 2002-03-15 2004-11-30 Memx, Inc. Self-shadowing MEM structures
US6747340B2 (en) * 2002-03-15 2004-06-08 Memx, Inc. Multi-level shielded multi-conductor interconnect bus for MEMS
WO2004071487A2 (en) * 2002-08-16 2004-08-26 Microchips, Inc. Controlled release device and method
KR100476932B1 (ko) * 2002-10-02 2005-03-16 삼성전자주식회사 커패시터를 포함하는 반도체 소자의 제조 방법
EP1551499A1 (de) 2002-10-04 2005-07-13 Microchips, Inc. Medizinische vorrichtung zur nervenstimulation und kontrollierten verabreichung von medikamenten
US7514283B2 (en) * 2003-03-20 2009-04-07 Robert Bosch Gmbh Method of fabricating electromechanical device having a controlled atmosphere
US8912174B2 (en) * 2003-04-16 2014-12-16 Mylan Pharmaceuticals Inc. Formulations and methods for treating rhinosinusitis
US7075160B2 (en) * 2003-06-04 2006-07-11 Robert Bosch Gmbh Microelectromechanical systems and devices having thin film encapsulated mechanical structures
US6936491B2 (en) 2003-06-04 2005-08-30 Robert Bosch Gmbh Method of fabricating microelectromechanical systems and devices having trench isolated contacts
US6952041B2 (en) * 2003-07-25 2005-10-04 Robert Bosch Gmbh Anchors for microelectromechanical systems having an SOI substrate, and method of fabricating same
WO2005041767A2 (en) 2003-11-03 2005-05-12 Microchips, Inc. Medical device for sensing glucose
GB0330010D0 (en) * 2003-12-24 2004-01-28 Cavendish Kinetics Ltd Method for containing a device and a corresponding device
US7068125B2 (en) 2004-03-04 2006-06-27 Robert Bosch Gmbh Temperature controlled MEMS resonator and method for controlling resonator frequency
US7102467B2 (en) * 2004-04-28 2006-09-05 Robert Bosch Gmbh Method for adjusting the frequency of a MEMS resonator
US7354522B2 (en) * 2004-08-04 2008-04-08 Eastman Kodak Company Substrate etching method for forming connected features
FR2874213B1 (fr) * 2004-08-13 2007-03-02 Commissariat Energie Atomique Dispositif comprenant un microsysteme encapsule et procede de fabrication
WO2006026768A1 (en) 2004-09-01 2006-03-09 Microchips, Inc. Multi-cap reservoir devices for controlled release or exposure of reservoir contents
US20080076975A1 (en) * 2005-01-25 2008-03-27 Microchips, Inc. Method and implantable device with reservoir array for pre-clinical in vivo testing
US7248131B2 (en) * 2005-03-14 2007-07-24 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Monolithic vertical integration of an acoustic resonator and electronic circuitry
WO2007004142A2 (en) * 2005-07-05 2007-01-11 Koninklijke Philips Electronics N.V. Packed semiconductor sensor chip for use in liquids
US7956428B2 (en) 2005-08-16 2011-06-07 Robert Bosch Gmbh Microelectromechanical devices and fabrication methods
US20070170528A1 (en) * 2006-01-20 2007-07-26 Aaron Partridge Wafer encapsulated microelectromechanical structure and method of manufacturing same
US8649840B2 (en) * 2007-06-07 2014-02-11 Microchips, Inc. Electrochemical biosensors and arrays
US7989262B2 (en) * 2008-02-22 2011-08-02 Cavendish Kinetics, Ltd. Method of sealing a cavity
US7993950B2 (en) * 2008-04-30 2011-08-09 Cavendish Kinetics, Ltd. System and method of encapsulation
EP2416350A1 (de) * 2010-08-06 2012-02-08 Imec Verfahren zur selektiven Ablagerung eines Halbleitermaterials
DE102015200176A1 (de) * 2015-01-09 2016-07-14 Robert Bosch Gmbh Verfahren zum Erzeugen des Schichtaufbaus eines Halbleiterbauelements

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DE3727142C2 (de) * 1987-08-14 1994-02-24 Kernforschungsz Karlsruhe Verfahren zur Herstellung von Mikrosensoren mit integrierter Signalverarbeitung
US5149673A (en) * 1989-02-21 1992-09-22 Cornell Research Foundation, Inc. Selective chemical vapor deposition of tungsten for microdynamic structures
US5326726A (en) * 1990-08-17 1994-07-05 Analog Devices, Inc. Method for fabricating monolithic chip containing integrated circuitry and suspended microstructure
US5236118A (en) * 1992-05-12 1993-08-17 The Regents Of The University Of California Aligned wafer bonding
DE4339190B4 (de) * 1992-11-16 2006-04-13 Denso Corp., Kariya Halbleiter-Beschleunigungsmesser
US5427975A (en) * 1993-05-10 1995-06-27 Delco Electronics Corporation Method of micromachining an integrated sensor on the surface of a silicon wafer

Also Published As

Publication number Publication date
WO1996032650A1 (en) 1996-10-17
US5504026A (en) 1996-04-02
EP0820599B1 (de) 2001-09-19
DE69615355D1 (de) 2001-10-25
EP0820599A1 (de) 1998-01-28

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