DE69614583D1 - Lichtempfängliche Vorrichtung - Google Patents
Lichtempfängliche VorrichtungInfo
- Publication number
- DE69614583D1 DE69614583D1 DE69614583T DE69614583T DE69614583D1 DE 69614583 D1 DE69614583 D1 DE 69614583D1 DE 69614583 T DE69614583 T DE 69614583T DE 69614583 T DE69614583 T DE 69614583T DE 69614583 D1 DE69614583 D1 DE 69614583D1
- Authority
- DE
- Germany
- Prior art keywords
- light
- sensitive device
- sensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP808295A JP2666888B2 (ja) | 1995-01-23 | 1995-01-23 | 光素子の製造方法 |
JP7008083A JP2705757B2 (ja) | 1995-01-23 | 1995-01-23 | 受光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69614583D1 true DE69614583D1 (de) | 2001-09-27 |
DE69614583T2 DE69614583T2 (de) | 2002-06-27 |
Family
ID=26342522
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69636016T Expired - Lifetime DE69636016T2 (de) | 1995-01-23 | 1996-01-22 | Verharen zur Herstellung einer Lichtempfangsvorrichtung |
DE69614583T Expired - Lifetime DE69614583T2 (de) | 1995-01-23 | 1996-01-22 | Lichtempfängliche Vorrichtung |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69636016T Expired - Lifetime DE69636016T2 (de) | 1995-01-23 | 1996-01-22 | Verharen zur Herstellung einer Lichtempfangsvorrichtung |
Country Status (3)
Country | Link |
---|---|
US (3) | US5661328A (de) |
EP (2) | EP0926742B1 (de) |
DE (2) | DE69636016T2 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19737498C2 (de) * | 1997-08-28 | 2002-09-12 | Deutsche Telekom Ag | Optische Verbindung |
FR2803950B1 (fr) * | 2000-01-14 | 2002-03-01 | Centre Nat Rech Scient | Dispositif de photodetection a microresonateur metal- semiconducteur vertical et procede de fabrication de ce dispositif |
US6445021B1 (en) * | 2000-09-20 | 2002-09-03 | International Business Machines Corporation | Negative differential resistance reoxidized nitride silicon-based photodiode and method |
US6403990B1 (en) * | 2001-03-27 | 2002-06-11 | Agilent Technologies, Inc. | Short turn-off time photoconductive switch |
US7072534B2 (en) * | 2002-07-22 | 2006-07-04 | Applied Materials, Inc. | Optical ready substrates |
US7043106B2 (en) * | 2002-07-22 | 2006-05-09 | Applied Materials, Inc. | Optical ready wafers |
US7110629B2 (en) * | 2002-07-22 | 2006-09-19 | Applied Materials, Inc. | Optical ready substrates |
FR2842945B1 (fr) * | 2002-07-25 | 2005-11-11 | Centre Nat Rech Scient | Dispositif de photodetection de type msm et a cavite resonnante comprenant un miroir a reseau d'electrodes metalliques |
KR20060026027A (ko) * | 2003-05-29 | 2006-03-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 광신호의 연속 라우팅 |
WO2005004295A2 (en) * | 2003-06-27 | 2005-01-13 | Applied Materials, Inc. | Pulsed quantum dot laser system with low jitter |
US20050016446A1 (en) | 2003-07-23 | 2005-01-27 | Abbott John S. | CaF2 lenses with reduced birefringence |
US7423254B2 (en) * | 2004-03-22 | 2008-09-09 | Research Foundation Of The City University Of New York | High responsivity high bandwidth metal-semiconductor-metal optoelectronic device |
US7272273B2 (en) * | 2005-01-21 | 2007-09-18 | Neophotonics Corporation | Photodetector coupled to a planar waveguide |
US20060222024A1 (en) * | 2005-03-15 | 2006-10-05 | Gray Allen L | Mode-locked semiconductor lasers with quantum-confined active region |
US20060227825A1 (en) * | 2005-04-07 | 2006-10-12 | Nl-Nanosemiconductor Gmbh | Mode-locked quantum dot laser with controllable gain properties by multiple stacking |
WO2007027615A1 (en) * | 2005-09-01 | 2007-03-08 | Applied Materials, Inc. | Ridge technique for fabricating an optical detector and an optical waveguide |
US7561607B2 (en) * | 2005-12-07 | 2009-07-14 | Innolume Gmbh | Laser source with broadband spectrum emission |
US7835408B2 (en) | 2005-12-07 | 2010-11-16 | Innolume Gmbh | Optical transmission system |
JP2009518833A (ja) * | 2005-12-07 | 2009-05-07 | インノルメ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 広帯域スペクトル発光を有するレーザ光源 |
US8411711B2 (en) * | 2005-12-07 | 2013-04-02 | Innolume Gmbh | Semiconductor laser with low relative intensity noise of individual longitudinal modes and optical transmission system incorporating the laser |
KR20090050696A (ko) * | 2007-11-16 | 2009-05-20 | 삼성전기주식회사 | 광배선 기판 및 그 제조방법 |
WO2013172815A1 (en) * | 2012-05-14 | 2013-11-21 | The Johns Hopkins University | Simplified devices utilizing novel pn-semiconductor structures |
US8860078B2 (en) | 2012-05-14 | 2014-10-14 | The Johns Hopkins University | Simplified devices utilizing novel pn-semiconductor structures |
US8785855B2 (en) * | 2012-10-16 | 2014-07-22 | Uvic Industry Partnerships Inc. | Interlaced terahertz transceiver using plasmonic resonance |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1299087B (de) * | 1966-05-10 | 1969-07-10 | Siemens Ag | Feldeffekt-Fototransistor |
US3949463A (en) * | 1973-02-13 | 1976-04-13 | Communications Satellite Corporation (Comsat) | Method of applying an anti-reflective coating to a solar cell |
JPS6386481A (ja) * | 1986-09-30 | 1988-04-16 | Agency Of Ind Science & Technol | 高感度横型受光素子 |
JPS63229867A (ja) * | 1987-03-11 | 1988-09-26 | ハネウエル・インコーポレーテツド | チヤネル導波路形シヨツトキ・フオトダイオード |
JPH02129970A (ja) * | 1988-11-09 | 1990-05-18 | Mitsubishi Electric Corp | ホトダイオード及びその製造方法 |
-
1996
- 1996-01-22 DE DE69636016T patent/DE69636016T2/de not_active Expired - Lifetime
- 1996-01-22 EP EP99200499A patent/EP0926742B1/de not_active Expired - Lifetime
- 1996-01-22 DE DE69614583T patent/DE69614583T2/de not_active Expired - Lifetime
- 1996-01-22 EP EP96300405A patent/EP0723302B1/de not_active Expired - Lifetime
- 1996-01-23 US US08/590,345 patent/US5661328A/en not_active Expired - Lifetime
-
1997
- 1997-05-27 US US08/863,632 patent/US5895227A/en not_active Expired - Lifetime
- 1997-07-25 US US08/900,826 patent/US5945720A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69636016T2 (de) | 2006-11-09 |
DE69636016D1 (de) | 2006-05-18 |
EP0723302B1 (de) | 2001-08-22 |
EP0926742A3 (de) | 1999-09-01 |
US5895227A (en) | 1999-04-20 |
US5945720A (en) | 1999-08-31 |
US5661328A (en) | 1997-08-26 |
DE69614583T2 (de) | 2002-06-27 |
EP0723302A3 (de) | 1997-04-09 |
EP0723302A2 (de) | 1996-07-24 |
EP0926742A2 (de) | 1999-06-30 |
EP0926742B1 (de) | 2006-04-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE |
|
8364 | No opposition during term of opposition |