DE69604987T2 - Vorrichtung mit einem schalter mit einer chrombeschichtung und verfahren zum aufbringen von chromschichten durch sputtern - Google Patents

Vorrichtung mit einem schalter mit einer chrombeschichtung und verfahren zum aufbringen von chromschichten durch sputtern

Info

Publication number
DE69604987T2
DE69604987T2 DE69604987T DE69604987T DE69604987T2 DE 69604987 T2 DE69604987 T2 DE 69604987T2 DE 69604987 T DE69604987 T DE 69604987T DE 69604987 T DE69604987 T DE 69604987T DE 69604987 T2 DE69604987 T2 DE 69604987T2
Authority
DE
Germany
Prior art keywords
chrome
sputtering
switch
applying
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69604987T
Other languages
English (en)
Other versions
DE69604987D1 (de
Inventor
Teunis Johannes Vink
Willem Walrave
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69604987D1 publication Critical patent/DE69604987D1/de
Publication of DE69604987T2 publication Critical patent/DE69604987T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28537—Deposition of Schottky electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE69604987T 1995-02-16 1996-01-29 Vorrichtung mit einem schalter mit einer chrombeschichtung und verfahren zum aufbringen von chromschichten durch sputtern Expired - Fee Related DE69604987T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP95200372 1995-02-16
PCT/IB1996/000074 WO1996025535A1 (en) 1995-02-16 1996-01-29 Device having a switch comprising a chromium layer and method for depositing chromium layers by sputtering

Publications (2)

Publication Number Publication Date
DE69604987D1 DE69604987D1 (de) 1999-12-09
DE69604987T2 true DE69604987T2 (de) 2000-05-04

Family

ID=8220019

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69604987T Expired - Fee Related DE69604987T2 (de) 1995-02-16 1996-01-29 Vorrichtung mit einem schalter mit einer chrombeschichtung und verfahren zum aufbringen von chromschichten durch sputtern

Country Status (5)

Country Link
US (3) US5751016A (de)
EP (1) EP0760020B1 (de)
JP (1) JPH09512390A (de)
DE (1) DE69604987T2 (de)
WO (1) WO1996025535A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09512390A (ja) * 1995-02-16 1997-12-09 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ クロム層を含むスイッチを持つデバイス、及びクロム層をスパッタリングでデポジットする方法
US6815762B2 (en) * 1997-05-30 2004-11-09 Hitachi, Ltd. Semiconductor integrated circuit device and process for manufacturing the same including spacers on bit lines
JP3404562B2 (ja) * 1996-11-18 2003-05-12 株式会社日立製作所 アクティブマトリクス型液晶表示装置
JP3730958B2 (ja) * 2002-12-25 2006-01-05 鹿児島日本電気株式会社 積層膜のパターン形成方法及び積層配線電極

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60134067A (ja) * 1983-12-19 1985-07-17 豊田合成株式会社 繊維物
US5256565A (en) * 1989-05-08 1993-10-26 The United States Of America As Represented By The United States Department Of Energy Electrochemical planarization
JP2839579B2 (ja) * 1989-10-02 1998-12-16 株式会社東芝 半導体装置及びその製造方法
ES2076385T3 (es) * 1990-03-02 1995-11-01 Applied Materials Inc Procedimiento para preparar una armadura, con el fin de reducir las particulas dentro de una camara de deposicion fisica de vapor.
JP2880322B2 (ja) * 1991-05-24 1999-04-05 キヤノン株式会社 堆積膜の形成方法
US5171412A (en) * 1991-08-23 1992-12-15 Applied Materials, Inc. Material deposition method for integrated circuit manufacturing
JPH0565630A (ja) * 1991-09-05 1993-03-19 Casio Comput Co Ltd 金属膜の成膜方法
US5709938A (en) * 1991-11-29 1998-01-20 Ppg Industries, Inc. Cathode targets of silicon and transition metal
US5656098A (en) * 1992-03-03 1997-08-12 Canon Kabushiki Kaisha Photovoltaic conversion device and method for producing same
US5346600A (en) * 1992-08-14 1994-09-13 Hughes Aircraft Company Plasma-enhanced magnetron-sputtered deposition of materials
JPH09512390A (ja) * 1995-02-16 1997-12-09 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ クロム層を含むスイッチを持つデバイス、及びクロム層をスパッタリングでデポジットする方法
US5672243A (en) * 1995-11-28 1997-09-30 Mosel Vitelic, Inc. Antireflection coating for highly reflective photolithographic layers comprising chromium oxide or chromium suboxide

Also Published As

Publication number Publication date
US5883398A (en) 1999-03-16
US5751016A (en) 1998-05-12
US5981389A (en) 1999-11-09
JPH09512390A (ja) 1997-12-09
EP0760020B1 (de) 1999-11-03
WO1996025535A1 (en) 1996-08-22
DE69604987D1 (de) 1999-12-09
EP0760020A1 (de) 1997-03-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee