DE69603427T2 - Oberflächenemittierender Laser mit vertikalem Resonator mit einer Wellenlänge zwischen 1,3 und 1,5 Mikrometer sowie dessen Herstellung - Google Patents
Oberflächenemittierender Laser mit vertikalem Resonator mit einer Wellenlänge zwischen 1,3 und 1,5 Mikrometer sowie dessen HerstellungInfo
- Publication number
- DE69603427T2 DE69603427T2 DE69603427T DE69603427T DE69603427T2 DE 69603427 T2 DE69603427 T2 DE 69603427T2 DE 69603427 T DE69603427 T DE 69603427T DE 69603427 T DE69603427 T DE 69603427T DE 69603427 T2 DE69603427 T2 DE 69603427T2
- Authority
- DE
- Germany
- Prior art keywords
- micrometers
- wavelength
- manufacture
- emitting laser
- vertical resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
- H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9511158A FR2739230B1 (fr) | 1995-09-22 | 1995-09-22 | Composant d'emission laser a cavite verticale a emission par la surface a une longueur d'onde comprise entre 1,3 et 1,5 mu m et procede pour sa realisation |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69603427D1 DE69603427D1 (de) | 1999-09-02 |
DE69603427T2 true DE69603427T2 (de) | 2000-05-31 |
Family
ID=9482841
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69603427T Expired - Fee Related DE69603427T2 (de) | 1995-09-22 | 1996-09-19 | Oberflächenemittierender Laser mit vertikalem Resonator mit einer Wellenlänge zwischen 1,3 und 1,5 Mikrometer sowie dessen Herstellung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5809051A (de) |
EP (1) | EP0765014B1 (de) |
JP (1) | JPH09116228A (de) |
DE (1) | DE69603427T2 (de) |
FR (1) | FR2739230B1 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5719891A (en) | 1995-12-18 | 1998-02-17 | Picolight Incorporated | Conductive element with lateral oxidation barrier |
JP3734900B2 (ja) * | 1996-10-31 | 2006-01-11 | 古河電気工業株式会社 | 半導体光導波路構造、光デバイス、及び、それらの製造方法 |
US6304588B1 (en) * | 1997-02-07 | 2001-10-16 | Xerox Corporation | Method and structure for eliminating polarization instability in laterally-oxidized VCSELs |
JP3482824B2 (ja) | 1997-07-29 | 2004-01-06 | セイコーエプソン株式会社 | 面発光型半導体レーザおよび面発光型半導体レーザアレイ |
JPH11154774A (ja) * | 1997-08-05 | 1999-06-08 | Canon Inc | 面発光半導体デバイスの製造方法、この方法によって製造された面発光半導体デバイス及びこのデバイスを用いた表示装置 |
US5956363A (en) * | 1997-08-15 | 1999-09-21 | Motorola, Inc. | Long wavelength vertical cavity surface emitting laser with oxidation layers and method of fabrication |
US6668005B2 (en) * | 1998-01-31 | 2003-12-23 | Klaus Streubel | Pre-fusion oxidized and wafer-bonded vertical cavity laser |
GB2333895B (en) * | 1998-01-31 | 2003-02-26 | Mitel Semiconductor Ab | Pre-fusion oxidized and wafer-bonded vertical cavity laser |
US6266357B1 (en) * | 1998-09-01 | 2001-07-24 | The United States Of America As Represented By The Secretary Of The Air Force | Microcavity surface emitting laser |
US20030219917A1 (en) * | 1998-12-21 | 2003-11-27 | Johnson Ralph H. | System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers |
US7257143B2 (en) * | 1998-12-21 | 2007-08-14 | Finisar Corporation | Multicomponent barrier layers in quantum well active regions to enhance confinement and speed |
US7408964B2 (en) | 2001-12-20 | 2008-08-05 | Finisar Corporation | Vertical cavity surface emitting laser including indium and nitrogen in the active region |
US7435660B2 (en) * | 1998-12-21 | 2008-10-14 | Finisar Corporation | Migration enhanced epitaxy fabrication of active regions having quantum wells |
US6922426B2 (en) | 2001-12-20 | 2005-07-26 | Finisar Corporation | Vertical cavity surface emitting laser including indium in the active region |
US7286585B2 (en) * | 1998-12-21 | 2007-10-23 | Finisar Corporation | Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region |
US7095770B2 (en) | 2001-12-20 | 2006-08-22 | Finisar Corporation | Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region |
US7058112B2 (en) | 2001-12-27 | 2006-06-06 | Finisar Corporation | Indium free vertical cavity surface emitting laser |
US6975660B2 (en) | 2001-12-27 | 2005-12-13 | Finisar Corporation | Vertical cavity surface emitting laser including indium and antimony in the active region |
US7167495B2 (en) * | 1998-12-21 | 2007-01-23 | Finisar Corporation | Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers |
DE19900816C2 (de) * | 1999-01-12 | 2001-04-26 | Siemens Ag | Vertikalresonator-Laserdiode mit optimierter aktiver Fläche, sowie Laserzeiger oder Laserpointer |
US6888873B2 (en) | 2002-02-21 | 2005-05-03 | Finisar Corporation | Long wavelength VCSEL bottom mirror |
US6822995B2 (en) | 2002-02-21 | 2004-11-23 | Finisar Corporation | GaAs/AI(Ga)As distributed bragg reflector on InP |
US7295586B2 (en) * | 2002-02-21 | 2007-11-13 | Finisar Corporation | Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs |
JP2003332685A (ja) * | 2003-05-30 | 2003-11-21 | Seiko Epson Corp | 面発光型半導体レーザおよび面発光型半導体レーザアレイ |
US7257141B2 (en) * | 2003-07-23 | 2007-08-14 | Palo Alto Research Center Incorporated | Phase array oxide-confined VCSELs |
US7860137B2 (en) | 2004-10-01 | 2010-12-28 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
WO2006039341A2 (en) | 2004-10-01 | 2006-04-13 | Finisar Corporation | Vertical cavity surface emitting laser having multiple top-side contacts |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5063569A (en) * | 1990-12-19 | 1991-11-05 | At&T Bell Laboratories | Vertical-cavity surface-emitting laser with non-epitaxial multilayered dielectric reflectors located on both surfaces |
US5359618A (en) * | 1993-06-01 | 1994-10-25 | Motorola, Inc. | High efficiency VCSEL and method of fabrication |
JPH0730187A (ja) * | 1993-07-09 | 1995-01-31 | Nippon Telegr & Teleph Corp <Ntt> | 面発光半導体レーザ |
US5493577A (en) * | 1994-12-21 | 1996-02-20 | Sandia Corporation | Efficient semiconductor light-emitting device and method |
-
1995
- 1995-09-22 FR FR9511158A patent/FR2739230B1/fr not_active Expired - Fee Related
-
1996
- 1996-09-19 DE DE69603427T patent/DE69603427T2/de not_active Expired - Fee Related
- 1996-09-19 EP EP96401992A patent/EP0765014B1/de not_active Expired - Lifetime
- 1996-09-20 US US08/717,000 patent/US5809051A/en not_active Expired - Lifetime
- 1996-09-20 JP JP8249832A patent/JPH09116228A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
FR2739230B1 (fr) | 1997-12-19 |
EP0765014A1 (de) | 1997-03-26 |
JPH09116228A (ja) | 1997-05-02 |
EP0765014B1 (de) | 1999-07-28 |
FR2739230A1 (fr) | 1997-03-28 |
DE69603427D1 (de) | 1999-09-02 |
US5809051A (en) | 1998-09-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: DERZEIT KEIN VERTRETER BESTELLT |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: AVANEX CORP.(N.D.GES.D.STAATES DELAWARE), FREMONT, |
|
8339 | Ceased/non-payment of the annual fee |