DE69601278D1 - Korrosionsbeständiger Druckwandler durch anorganischen Überzug im Hohlraum - Google Patents
Korrosionsbeständiger Druckwandler durch anorganischen Überzug im HohlraumInfo
- Publication number
- DE69601278D1 DE69601278D1 DE69601278T DE69601278T DE69601278D1 DE 69601278 D1 DE69601278 D1 DE 69601278D1 DE 69601278 T DE69601278 T DE 69601278T DE 69601278 T DE69601278 T DE 69601278T DE 69601278 D1 DE69601278 D1 DE 69601278D1
- Authority
- DE
- Germany
- Prior art keywords
- thanks
- corrosion
- cavity
- pressure transducer
- inorganic coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 230000007797 corrosion Effects 0.000 title 1
- 238000005260 corrosion Methods 0.000 title 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0627—Protection against aggressive medium in general
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/141—Monolithic housings, e.g. molded or one-piece housings
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
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- H01L2224/0554—External layer
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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- H01L2224/481—Disposition
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- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49764—Method of mechanical manufacture with testing or indicating
- Y10T29/49771—Quantitative measuring or gauging
- Y10T29/49776—Pressure, force, or weight determining
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/415,900 US5889211A (en) | 1995-04-03 | 1995-04-03 | Media compatible microsensor structure and methods of manufacturing and using the same |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69601278D1 true DE69601278D1 (de) | 1999-02-18 |
DE69601278T2 DE69601278T2 (de) | 1999-09-09 |
Family
ID=23647695
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69601278T Expired - Fee Related DE69601278T2 (de) | 1995-04-03 | 1996-03-25 | Korrosionsbeständiger Druckwandler durch anorganischen Überzug im Hohlraum |
Country Status (5)
Country | Link |
---|---|
US (1) | US5889211A (de) |
EP (1) | EP0736757B1 (de) |
JP (1) | JPH08278218A (de) |
KR (1) | KR100402875B1 (de) |
DE (1) | DE69601278T2 (de) |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6140144A (en) * | 1996-08-08 | 2000-10-31 | Integrated Sensing Systems, Inc. | Method for packaging microsensors |
US5994161A (en) * | 1997-09-03 | 1999-11-30 | Motorola, Inc. | Temperature coefficient of offset adjusted semiconductor device and method thereof |
US7134323B1 (en) | 1998-04-02 | 2006-11-14 | Rockwell Automation Technologies, Inc. | System and method for dynamic lubrication adjustment for a lubrication analysis system |
US6023961A (en) | 1998-04-02 | 2000-02-15 | Reliance Electric Industrial Company | Micro-viscosity sensor and lubrication analysis system employing the same |
US6546785B1 (en) * | 1998-04-02 | 2003-04-15 | Rockwell Automation Technologies, Inc. | System and method for dynamic lubrication adjustment for a lubrication analysis system |
DE19816872B4 (de) | 1998-04-16 | 2005-12-15 | Ebro Electronic Gmbh & Co. Kg | Meßvorrichtung zum Messen des Drucks einer Atmosphäre |
DE19830538A1 (de) * | 1998-07-08 | 2000-01-20 | Siemens Ag | Drucksensor-Anordnung, insbesondere zur Druckerfassung in einem ölbeaufschlagten Druckbereich eines Kraftfahrzeuggetriebes |
US6177726B1 (en) * | 1999-02-11 | 2001-01-23 | Philips Electronics North America Corporation | SiO2 wire bond insulation in semiconductor assemblies |
US20030011048A1 (en) * | 1999-03-19 | 2003-01-16 | Abbott Donald C. | Semiconductor circuit assembly having a plated leadframe including gold selectively covering areas to be soldered |
US6579612B1 (en) | 1999-06-24 | 2003-06-17 | International Business Machines Corporation | Magnetostrictive sensor structure |
WO2001026136A2 (en) * | 1999-10-05 | 2001-04-12 | Delta Danish Electronics, Light & Acoustics | Encapsulation for a three-dimensional microsystem |
US6453749B1 (en) | 1999-10-28 | 2002-09-24 | Motorola, Inc. | Physical sensor component |
US6576980B1 (en) | 1999-11-30 | 2003-06-10 | Agere Systems, Inc. | Surface treatment anneal of hydrogenated silicon-oxy-carbide dielectric layer |
AU2001261657A1 (en) * | 2000-05-15 | 2001-11-26 | Tecan Trading Ag | Use of vapor-deposited conformal coatings in microfluidic structures |
DE10035538A1 (de) * | 2000-07-21 | 2002-02-07 | Bosch Gmbh Robert | Sensor |
EP1245528A1 (de) * | 2001-03-27 | 2002-10-02 | Delta Danish Electronics, Light & Acoustics | Ein einstückiges flexibles Mikrosystem und Verfahren zu dessen Herstellung |
US6769319B2 (en) | 2001-07-09 | 2004-08-03 | Freescale Semiconductor, Inc. | Component having a filter |
DE10140322B4 (de) * | 2001-08-16 | 2007-10-04 | Abb Patent Gmbh | Mikrostrukturierter dreidimensionaler Sensor oder Aktor, sowie Verfahren zu seiner Herstellung |
DE10163760C5 (de) | 2001-12-28 | 2012-02-02 | Ebro Electronic Gmbh & Co. Kg | Vorrichtung und Verfahren zum Messen des Zustandes von Ölen und Fetten |
JP2003302299A (ja) * | 2002-04-10 | 2003-10-24 | Denso Corp | 力学量検出装置の製造方法 |
JP3915586B2 (ja) * | 2002-04-24 | 2007-05-16 | 株式会社デンソー | 力学量検出装置の製造方法 |
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DE3912217A1 (de) * | 1989-04-13 | 1990-10-18 | Endress Hauser Gmbh Co | Drucksensor |
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JPH05149814A (ja) * | 1991-11-29 | 1993-06-15 | Fuji Electric Co Ltd | 二重ダイヤフラム式半導体圧力センサ |
EP0548470B2 (de) * | 1991-12-24 | 1999-12-08 | Landis & Gyr Technology Innovation AG | Drucksensor mit einer Membran aus Halbleitermaterial |
-
1995
- 1995-04-03 US US08/415,900 patent/US5889211A/en not_active Expired - Lifetime
-
1996
- 1996-03-12 KR KR1019960006428A patent/KR100402875B1/ko not_active IP Right Cessation
- 1996-03-25 DE DE69601278T patent/DE69601278T2/de not_active Expired - Fee Related
- 1996-03-25 EP EP96104684A patent/EP0736757B1/de not_active Expired - Lifetime
- 1996-03-29 JP JP8104434A patent/JPH08278218A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0736757B1 (de) | 1999-01-07 |
KR960039444A (ko) | 1996-11-25 |
JPH08278218A (ja) | 1996-10-22 |
KR100402875B1 (ko) | 2004-07-05 |
DE69601278T2 (de) | 1999-09-09 |
EP0736757A1 (de) | 1996-10-09 |
US5889211A (en) | 1999-03-30 |
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