DE69525700D1 - Method of manufacturing a semiconductor light emitting device - Google Patents

Method of manufacturing a semiconductor light emitting device

Info

Publication number
DE69525700D1
DE69525700D1 DE69525700T DE69525700T DE69525700D1 DE 69525700 D1 DE69525700 D1 DE 69525700D1 DE 69525700 T DE69525700 T DE 69525700T DE 69525700 T DE69525700 T DE 69525700T DE 69525700 D1 DE69525700 D1 DE 69525700D1
Authority
DE
Germany
Prior art keywords
manufacturing
light emitting
emitting device
semiconductor light
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69525700T
Other languages
German (de)
Other versions
DE69525700T2 (en
Inventor
Nobuhiko Noto
Keizo Adomi
Takao Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69525700D1 publication Critical patent/DE69525700D1/en
Publication of DE69525700T2 publication Critical patent/DE69525700T2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
DE69525700T 1994-09-22 1995-08-17 Method of manufacturing a semiconductor light emitting device Expired - Fee Related DE69525700T2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22828694A JP2871477B2 (en) 1994-09-22 1994-09-22 Semiconductor light emitting device and method of manufacturing the same

Publications (2)

Publication Number Publication Date
DE69525700D1 true DE69525700D1 (en) 2002-04-11
DE69525700T2 DE69525700T2 (en) 2002-08-01

Family

ID=16874096

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69525700T Expired - Fee Related DE69525700T2 (en) 1994-09-22 1995-08-17 Method of manufacturing a semiconductor light emitting device

Country Status (4)

Country Link
US (1) US5600158A (en)
EP (1) EP0703630B1 (en)
JP (1) JP2871477B2 (en)
DE (1) DE69525700T2 (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3122324B2 (en) * 1995-02-20 2001-01-09 三菱電線工業株式会社 Semiconductor light emitting device
JP3233569B2 (en) * 1996-03-22 2001-11-26 シャープ株式会社 Semiconductor light emitting device
CN1114959C (en) * 1996-05-30 2003-07-16 罗姆股份有限公司 Semiconductor light emitting device and method for manufacturing the same
US5835521A (en) * 1997-02-10 1998-11-10 Motorola, Inc. Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication
WO1998052229A1 (en) * 1997-05-14 1998-11-19 Research Triangle Institute Light emitting device contact layers having substantially equal spreading resistance and method of manufacture
US6107647A (en) * 1997-05-15 2000-08-22 Rohm Co. Ltd. Semiconductor AlGaInP light emitting device
GB2344457B (en) * 1998-12-02 2000-12-27 Arima Optoelectronics Corp Semiconductor devices
JP3472714B2 (en) * 1999-01-25 2003-12-02 シャープ株式会社 Method for manufacturing semiconductor light emitting device
US20040227151A1 (en) 2003-03-31 2004-11-18 Hitachi Cable, Ltd. Light emitting diode
JP2007042751A (en) * 2005-08-01 2007-02-15 Hitachi Cable Ltd Semiconductor light emitting device
JP2008066514A (en) * 2006-09-07 2008-03-21 Hitachi Cable Ltd Epitaxial wafer for semiconductor luminescent device and semiconductor luminescent device
JP4903643B2 (en) * 2007-07-12 2012-03-28 株式会社東芝 Semiconductor light emitting device
US9293622B2 (en) 2009-05-05 2016-03-22 3M Innovative Properties Company Re-emitting semiconductor carrier devices for use with LEDs and methods of manufacture
WO2011008476A1 (en) 2009-06-30 2011-01-20 3M Innovative Properties Company Cadmium-free re-emitting semiconductor construction
CN102804411A (en) 2009-05-05 2012-11-28 3M创新有限公司 Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms
WO2011008474A1 (en) 2009-06-30 2011-01-20 3M Innovative Properties Company Electroluminescent devices with color adjustment based on current crowding
KR20120092549A (en) 2009-06-30 2012-08-21 쓰리엠 이노베이티브 프로퍼티즈 컴파니 White light electroluminescent devices with adjustable color temperature
KR101622309B1 (en) 2010-12-16 2016-05-18 삼성전자주식회사 Nano-structured light emitting device
SG11201408080UA (en) 2012-06-20 2015-01-29 Univ Nanyang Tech A light-emitting device
KR102163987B1 (en) * 2014-05-30 2020-10-12 엘지이노텍 주식회사 Light emitting device
KR102200023B1 (en) * 2014-06-20 2021-01-11 엘지이노텍 주식회사 Light emitting device
CN114420814A (en) * 2022-04-01 2022-04-29 江西兆驰半导体有限公司 LED epitaxial wafer, epitaxial growth method and LED chip
CN115305566A (en) * 2022-10-12 2022-11-08 广州粤芯半导体技术有限公司 Method for producing epitaxial layer and semiconductor comprising epitaxial layer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2681352B2 (en) * 1987-07-31 1997-11-26 信越半導体 株式会社 Light emitting semiconductor device
US5048035A (en) * 1989-05-31 1991-09-10 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JP2900754B2 (en) * 1993-05-31 1999-06-02 信越半導体株式会社 AlGaInP light emitting device
JPH0794781A (en) * 1993-09-24 1995-04-07 Toshiba Corp Surface emission type semiconductor light emitting diode

Also Published As

Publication number Publication date
DE69525700T2 (en) 2002-08-01
US5600158A (en) 1997-02-04
JPH0897467A (en) 1996-04-12
EP0703630B1 (en) 2002-03-06
JP2871477B2 (en) 1999-03-17
EP0703630A2 (en) 1996-03-27
EP0703630A3 (en) 1996-07-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee