DE69525188T2 - High and low voltage CMOS device and manufacturing process - Google Patents

High and low voltage CMOS device and manufacturing process

Info

Publication number
DE69525188T2
DE69525188T2 DE69525188T DE69525188T DE69525188T2 DE 69525188 T2 DE69525188 T2 DE 69525188T2 DE 69525188 T DE69525188 T DE 69525188T DE 69525188 T DE69525188 T DE 69525188T DE 69525188 T2 DE69525188 T2 DE 69525188T2
Authority
DE
Germany
Prior art keywords
manufacturing process
low voltage
cmos device
voltage cmos
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69525188T
Other languages
German (de)
Other versions
DE69525188D1 (en
Inventor
Chia-Cu P Mei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE69525188D1 publication Critical patent/DE69525188D1/en
Application granted granted Critical
Publication of DE69525188T2 publication Critical patent/DE69525188T2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
DE69525188T 1994-04-08 1995-04-10 High and low voltage CMOS device and manufacturing process Expired - Fee Related DE69525188T2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/224,948 US5498554A (en) 1994-04-08 1994-04-08 Method of making extended drain resurf lateral DMOS devices

Publications (2)

Publication Number Publication Date
DE69525188D1 DE69525188D1 (en) 2002-03-14
DE69525188T2 true DE69525188T2 (en) 2002-08-22

Family

ID=22842891

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69525188T Expired - Fee Related DE69525188T2 (en) 1994-04-08 1995-04-10 High and low voltage CMOS device and manufacturing process

Country Status (5)

Country Link
US (3) US5498554A (en)
EP (1) EP0677876B1 (en)
JP (1) JPH07307394A (en)
DE (1) DE69525188T2 (en)
TW (1) TW289158B (en)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6242787B1 (en) 1995-11-15 2001-06-05 Denso Corporation Semiconductor device and manufacturing method thereof
US6831331B2 (en) 1995-11-15 2004-12-14 Denso Corporation Power MOS transistor for absorbing surge current
US5547894A (en) * 1995-12-21 1996-08-20 International Business Machines Corporation CMOS processing with low and high-current FETs
US5753956A (en) * 1996-01-11 1998-05-19 Micron Technology, Inc. Semiconductor processing methods of forming complementary metal oxide semiconductor memory and other circuitry, and memory and other circuitry
US5880502A (en) 1996-09-06 1999-03-09 Micron Display Technology, Inc. Low and high voltage CMOS devices and process for fabricating same
US5728607A (en) * 1996-11-20 1998-03-17 Lucent Technologies Inc. Method of making a P-channel bipolar transistor
US6110804A (en) * 1996-12-02 2000-08-29 Semiconductor Components Industries, Llc Method of fabricating a semiconductor device having a floating field conductor
JPH10189762A (en) 1996-12-20 1998-07-21 Nec Corp Semiconductor device and its manufacturing method
KR100220252B1 (en) * 1996-12-28 1999-09-15 김영환 Method of manufacturing semiconductor device
US6160290A (en) * 1997-11-25 2000-12-12 Texas Instruments Incorporated Reduced surface field device having an extended field plate and method for forming the same
FR2779574B1 (en) * 1998-06-03 2003-01-31 Sgs Thomson Microelectronics METHOD FOR MANUFACTURING HIGH AND LOW VOLTAGE TRANSISTORS
JP2000022142A (en) * 1998-06-29 2000-01-21 Denso Corp Semiconductor device and producing method therefor
US5976923A (en) * 1998-12-08 1999-11-02 United Microelectronics Corp. Method for fabricating a high-voltage semiconductor device
US6091657A (en) * 1999-01-20 2000-07-18 Lucent Technologies Inc. Integrated circuit having protection of low voltage devices
SE523899C2 (en) * 1999-04-15 2004-06-01 Ericsson Telefon Ab L M semiconductor device
US6365932B1 (en) 1999-08-20 2002-04-02 Denso Corporation Power MOS transistor
US6348382B1 (en) 1999-09-09 2002-02-19 Taiwan Semiconductor Manufacturing Company Integration process to increase high voltage breakdown performance
US6297098B1 (en) * 1999-11-01 2001-10-02 Taiwan Semiconductor Manufacturing Company Tilt-angle ion implant to improve junction breakdown in flash memory application
KR100336562B1 (en) * 1999-12-10 2002-05-11 박종섭 Method of fabricating MOS
KR100344810B1 (en) 2000-07-26 2002-07-20 엘지전자주식회사 current drive circuit using high voltage element
US6660603B2 (en) 2000-09-21 2003-12-09 Texas Instruments Incorporated Higher voltage drain extended MOS transistors with self-aligned channel and drain extensions
US7115946B2 (en) * 2000-09-28 2006-10-03 Kabushiki Kaisha Toshiba MOS transistor having an offset region
SE519382C2 (en) * 2000-11-03 2003-02-25 Ericsson Telefon Ab L M Integration of self-oriented MOS high voltage components and semiconductor structure including such
US6818494B1 (en) * 2001-03-26 2004-11-16 Hewlett-Packard Development Company, L.P. LDMOS and CMOS integrated circuit and method of making
WO2002095833A1 (en) * 2001-05-15 2002-11-28 Virtual Silicon Technology, Inc. High voltage n-channel ldmos devices built in a deep submicron cmos process
JP4166010B2 (en) * 2001-12-04 2008-10-15 富士電機デバイステクノロジー株式会社 Horizontal high voltage MOSFET and semiconductor device having the same
EP1321985B1 (en) * 2001-12-20 2007-10-24 STMicroelectronics S.r.l. Method of integrating metal oxide semiconductor field effect transistors
US6861341B2 (en) * 2002-02-22 2005-03-01 Xerox Corporation Systems and methods for integration of heterogeneous circuit devices
KR100867574B1 (en) * 2002-05-09 2008-11-10 페어차일드코리아반도체 주식회사 Power device and method for manufacturing the same
US7825488B2 (en) 2006-05-31 2010-11-02 Advanced Analogic Technologies, Inc. Isolation structures for integrated circuits and modular methods of forming the same
US7667268B2 (en) * 2002-08-14 2010-02-23 Advanced Analogic Technologies, Inc. Isolated transistor
KR100448889B1 (en) * 2002-11-22 2004-09-18 한국전자통신연구원 Fabrication method of devices for power IC applications using SOI substrate
US7019377B2 (en) * 2002-12-17 2006-03-28 Micrel, Inc. Integrated circuit including high voltage devices and low voltage devices
JP2004228466A (en) * 2003-01-27 2004-08-12 Renesas Technology Corp Integrated semiconductor device and manufacturing method therefor
US7235451B2 (en) * 2003-03-03 2007-06-26 Texas Instruments Incorporated Drain extended MOS devices with self-aligned floating region and fabrication methods therefor
US6900101B2 (en) * 2003-06-13 2005-05-31 Texas Instruments Incorporated LDMOS transistors and methods for making the same
US6867640B2 (en) * 2003-07-01 2005-03-15 Ami Semiconductor, Inc. Double-sided extended drain field effect transistor, and integrated overvoltage and reverse voltage protection circuit that uses the same
JP4198006B2 (en) * 2003-07-25 2008-12-17 株式会社リコー Manufacturing method of semiconductor device
US7005354B2 (en) * 2003-09-23 2006-02-28 Texas Instruments Incorporated Depletion drain-extended MOS transistors and methods for making the same
US7091535B2 (en) * 2004-03-05 2006-08-15 Taiwan Semiconductor Manufacturing Company High voltage device embedded non-volatile memory cell and fabrication method
US7238986B2 (en) * 2004-05-03 2007-07-03 Texas Instruments Incorporated Robust DEMOS transistors and method for making the same
US7358567B2 (en) * 2004-06-07 2008-04-15 United Microelectronics Corp. High-voltage MOS device and fabrication thereof
JP4959931B2 (en) * 2004-09-29 2012-06-27 オンセミコンダクター・トレーディング・リミテッド Manufacturing method of semiconductor device
DE102005054672B4 (en) 2005-11-16 2014-06-12 Austriamicrosystems Ag High-voltage transistor with low threshold voltage and such a high-voltage transistor comprehensive device
KR100690924B1 (en) * 2005-12-21 2007-03-09 삼성전자주식회사 Semiconductor integrated circuit device and fabrication method for the same
KR100796500B1 (en) * 2005-12-29 2008-01-21 동부일렉트로닉스 주식회사 Method for Fabricating High Voltage IC Devices
US8558349B2 (en) * 2006-08-11 2013-10-15 System General Corp. Integrated circuit for a high-side transistor driver
US20080042221A1 (en) * 2006-08-15 2008-02-21 Liming Tsau High voltage transistor
ITTO20060785A1 (en) * 2006-11-02 2008-05-03 St Microelectronics Srl MOS DEVICE RESISTANT TO IONIZING RADIATION
KR100834287B1 (en) * 2006-12-27 2008-05-30 동부일렉트로닉스 주식회사 Ldmos device and method for manufacturing the same
US7781843B1 (en) 2007-01-11 2010-08-24 Hewlett-Packard Development Company, L.P. Integrating high-voltage CMOS devices with low-voltage CMOS
US20080237740A1 (en) * 2007-03-29 2008-10-02 United Microelectronics Corp. Semiconductor device and the manufacturing method thereof
US8168466B2 (en) * 2007-06-01 2012-05-01 Semiconductor Components Industries, Llc Schottky diode and method therefor
US7548365B2 (en) * 2007-06-06 2009-06-16 Texas Instruments Incorporated Semiconductor device and method comprising a high voltage reset driver and an isolated memory array
US7838940B2 (en) 2007-12-04 2010-11-23 Infineon Technologies Ag Drain-extended field effect transistor
US8163621B2 (en) 2008-06-06 2012-04-24 Globalfoundries Singapore Pte. Ltd. High performance LDMOS device having enhanced dielectric strain layer
US8097930B2 (en) * 2008-08-08 2012-01-17 Infineon Technologies Ag Semiconductor devices with trench isolations
US9184097B2 (en) * 2009-03-12 2015-11-10 System General Corporation Semiconductor devices and formation methods thereof
US8643090B2 (en) * 2009-03-23 2014-02-04 Infineon Technologies Ag Semiconductor devices and methods for manufacturing a semiconductor device
US8247280B2 (en) 2009-10-20 2012-08-21 Taiwan Semiconductor Manufacturing Company, Ltd. Integration of low and high voltage CMOS devices
US8575702B2 (en) * 2009-11-27 2013-11-05 Magnachip Semiconductor, Ltd. Semiconductor device and method for fabricating semiconductor device
EP2402998B1 (en) * 2010-07-01 2020-04-08 ams AG Method of producing a p-channel LDMOS transistor
US8664720B2 (en) 2010-08-25 2014-03-04 Infineon Technologies Ag High voltage semiconductor devices
US9214457B2 (en) 2011-09-20 2015-12-15 Alpha & Omega Semiconductor Incorporated Method of integrating high voltage devices
JP5784512B2 (en) * 2012-01-13 2015-09-24 株式会社東芝 Semiconductor device
JP2013187263A (en) * 2012-03-06 2013-09-19 Canon Inc Semiconductor device, recording device and manufacturing methods of those
US9123642B1 (en) 2013-07-22 2015-09-01 Cypress Semiconductor Corporation Method of forming drain extended MOS transistors for high voltage circuits
CN104425489B (en) * 2013-08-20 2017-03-01 上海华虹宏力半导体制造有限公司 High tension apparatus and low-voltage device integrated morphology and integrated approach
CN104425370B (en) * 2013-08-27 2017-10-20 中芯国际集成电路制造(上海)有限公司 A kind of semiconductor devices and its manufacture method
JP6193771B2 (en) * 2014-01-28 2017-09-06 ルネサスエレクトロニクス株式会社 Semiconductor device
DE102014017146A1 (en) * 2014-04-14 2015-10-15 Elmos Semiconductor Aktiengesellschaft Rail-to-rail reverse polarity protection for the combined input / output of an integrated CMOS circuit on a P-substrate
US10340395B2 (en) * 2017-05-01 2019-07-02 Qualcomm Incorporated Semiconductor variable capacitor using threshold implant region
TWI796237B (en) * 2021-12-03 2023-03-11 立錡科技股份有限公司 Integration manufacturing method of depletion high voltage nmos device and depletion low voltage nmos device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2940954A1 (en) * 1979-10-09 1981-04-23 Nixdorf Computer Ag, 4790 Paderborn METHOD FOR THE PRODUCTION OF HIGH-VOLTAGE MOS TRANSISTORS CONTAINING MOS-INTEGRATED CIRCUITS AND CIRCUIT ARRANGEMENT FOR SWITCHING POWER CIRCUITS USING SUCH HIGH-VOLTAGE MOS TRANSISTORS
US4593458A (en) * 1984-11-02 1986-06-10 General Electric Company Fabrication of integrated circuit with complementary, dielectrically-isolated, high voltage semiconductor devices
JPH01147854A (en) * 1987-12-04 1989-06-09 Nissan Motor Co Ltd Semiconductor device
US5237193A (en) * 1988-06-24 1993-08-17 Siliconix Incorporated Lightly doped drain MOSFET with reduced on-resistance
JPH02237159A (en) * 1989-03-10 1990-09-19 Toshiba Corp Semiconductor device
US5047358A (en) * 1989-03-17 1991-09-10 Delco Electronics Corporation Process for forming high and low voltage CMOS transistors on a single integrated circuit chip
IT1235843B (en) * 1989-06-14 1992-11-03 Sgs Thomson Microelectronics INTEGRATED DEVICE CONTAINING POWER STRUCTURES FORMED WITH COMPLEMENTARY LDMOS TRANSISTORS, CMOS AND PNP VERTICAL STRUCTURES WITH INCREASED CAPACITY TO SUPPORT A HIGH SUPPLY VOLTAGE.
US5386136A (en) * 1991-05-06 1995-01-31 Siliconix Incorporated Lightly-doped drain MOSFET with improved breakdown characteristics
US5306652A (en) * 1991-12-30 1994-04-26 Texas Instruments Incorporated Lateral double diffused insulated gate field effect transistor fabrication process
JP2861624B2 (en) * 1992-05-13 1999-02-24 日本電気株式会社 Method for manufacturing semiconductor device
US5328859A (en) * 1993-01-04 1994-07-12 Xerox Corporation Method of making high voltage PNP bipolar transistor in CMOS

Also Published As

Publication number Publication date
US5501994A (en) 1996-03-26
US5498554A (en) 1996-03-12
US5747850A (en) 1998-05-05
DE69525188D1 (en) 2002-03-14
TW289158B (en) 1996-10-21
EP0677876A1 (en) 1995-10-18
EP0677876B1 (en) 2002-01-30
JPH07307394A (en) 1995-11-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee