DE69523291T2 - Diodenanordnung zum schutz von metall-oxyd-metall-kondensatoren - Google Patents

Diodenanordnung zum schutz von metall-oxyd-metall-kondensatoren

Info

Publication number
DE69523291T2
DE69523291T2 DE69523291T DE69523291T DE69523291T2 DE 69523291 T2 DE69523291 T2 DE 69523291T2 DE 69523291 T DE69523291 T DE 69523291T DE 69523291 T DE69523291 T DE 69523291T DE 69523291 T2 DE69523291 T2 DE 69523291T2
Authority
DE
Germany
Prior art keywords
metal
oxyd
diode arrangement
capacitors
protecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69523291T
Other languages
English (en)
Other versions
DE69523291D1 (de
Inventor
F Beigel
A Krieger
L Feindt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Analog Devices Inc
Original Assignee
Analog Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Analog Devices Inc filed Critical Analog Devices Inc
Application granted granted Critical
Publication of DE69523291D1 publication Critical patent/DE69523291D1/de
Publication of DE69523291T2 publication Critical patent/DE69523291T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69523291T 1994-02-18 1995-02-17 Diodenanordnung zum schutz von metall-oxyd-metall-kondensatoren Expired - Lifetime DE69523291T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US19885694A 1994-02-18 1994-02-18
PCT/US1995/002103 WO1995022842A1 (en) 1994-02-18 1995-02-17 Diode device to protect metal-oxide-metal capacitors

Publications (2)

Publication Number Publication Date
DE69523291D1 DE69523291D1 (de) 2001-11-22
DE69523291T2 true DE69523291T2 (de) 2002-04-18

Family

ID=22735142

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69523291T Expired - Lifetime DE69523291T2 (de) 1994-02-18 1995-02-17 Diodenanordnung zum schutz von metall-oxyd-metall-kondensatoren

Country Status (5)

Country Link
US (2) US5477078A (de)
EP (1) EP0745275B1 (de)
JP (1) JPH09509532A (de)
DE (1) DE69523291T2 (de)
WO (1) WO1995022842A1 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5477078A (en) * 1994-02-18 1995-12-19 Analog Devices, Incorporated Integrated circuit (IC) with a two-terminal diode device to protect metal-oxide-metal capacitors from ESD damage
US5656510A (en) * 1994-11-22 1997-08-12 Lucent Technologies Inc. Method for manufacturing gate oxide capacitors including wafer backside dielectric and implantation electron flood gun current control
US5780897A (en) * 1995-11-13 1998-07-14 Digital Equipment Corporation ESD protection clamp for mixed voltage I/O stages using NMOS transistors
JP3602242B2 (ja) * 1996-02-14 2004-12-15 株式会社ルネサステクノロジ 半導体装置
US5966517A (en) 1996-11-01 1999-10-12 Motorola, Inc. Semiconductor device using diode place-holders and method of manufacture thereof
US5786722A (en) * 1996-11-12 1998-07-28 Xerox Corporation Integrated RF switching cell built in CMOS technology and utilizing a high voltage integrated circuit diode with a charge injecting node
DE19746620A1 (de) * 1997-10-22 1999-05-06 Siemens Ag Halbleiterdiode
US6479872B1 (en) 1998-12-28 2002-11-12 Taiwan Semiconductor Manufacturing Company Dynamic substrate-coupled electrostatic discharging protection circuit
KR100290916B1 (ko) * 1999-03-18 2001-05-15 김영환 이에스디(ｅｓｄ) 보호회로 및 그의 제조 방법
JP4597284B2 (ja) * 1999-04-12 2010-12-15 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US6365932B1 (en) 1999-08-20 2002-04-02 Denso Corporation Power MOS transistor
DE19944487B4 (de) * 1999-09-16 2005-04-28 Infineon Technologies Ag ESD-Schutzanordnung für eine Halbleitervorrichtung
US6396107B1 (en) 2000-11-20 2002-05-28 International Business Machines Corporation Trench-defined silicon germanium ESD diode network
US7098509B2 (en) * 2004-01-02 2006-08-29 Semiconductor Components Industries, L.L.C. High energy ESD structure and method
DE102004008803B3 (de) * 2004-02-20 2005-10-27 Zentrum Mikroelektronik Dresden Ag Schutzdiode zum Schutz von Halbleiterschaltkreisen gegen elektrostatische Entladungen
DE102004026100B4 (de) 2004-05-25 2007-10-25 Infineon Technologies Ag ESD-Schutzstrukturen für Halbleiterbauelemente
JP4791015B2 (ja) * 2004-09-29 2011-10-12 ルネサスエレクトロニクス株式会社 縦型ｍｏｓｆｅｔ
US20090115018A1 (en) * 2007-11-01 2009-05-07 Alpha & Omega Semiconductor, Ltd Transient voltage suppressor manufactured in silicon on oxide (SOI) layer
US7999357B1 (en) 2008-05-12 2011-08-16 Semiconductor Components Industries, Llc Electrostatic discharge circuit using forward biased circular-arc shaped steering diodes
US8003478B2 (en) * 2008-06-06 2011-08-23 Semiconductor Components Industries, Llc Method of forming a bi-directional diode and structure therefor
JP5448584B2 (ja) * 2008-06-25 2014-03-19 株式会社半導体エネルギー研究所 半導体装置
DE102009032486A1 (de) 2009-07-09 2011-01-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US9520486B2 (en) 2009-11-04 2016-12-13 Analog Devices, Inc. Electrostatic protection device
DE102010027679A1 (de) * 2010-07-20 2012-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US10199482B2 (en) 2010-11-29 2019-02-05 Analog Devices, Inc. Apparatus for electrostatic discharge protection
US8816389B2 (en) 2011-10-21 2014-08-26 Analog Devices, Inc. Overvoltage and/or electrostatic discharge protection device
US8742455B2 (en) 2011-05-11 2014-06-03 Analog Devices, Inc. Apparatus for electrostatic discharge protection
US8421189B2 (en) * 2011-05-11 2013-04-16 Analog Devices, Inc. Apparatus for electrostatic discharge protection
US8803193B2 (en) 2011-05-11 2014-08-12 Analog Devices, Inc. Overvoltage and/or electrostatic discharge protection device
TWI506798B (zh) * 2011-06-16 2015-11-01 Macronix Int Co Ltd 高壓電阻半導體裝置與製造高壓電阻半導體裝置的方法
US9484739B2 (en) 2014-09-25 2016-11-01 Analog Devices Global Overvoltage protection device and method
US10181719B2 (en) 2015-03-16 2019-01-15 Analog Devices Global Overvoltage blocking protection device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5988871A (ja) * 1982-11-12 1984-05-22 バ−・ブラウン・コ−ポレ−ション 高安定低電圧集積回路表面下降状ダイオ−ド構造体及びその製造方法
JPH0732237B2 (ja) * 1985-04-08 1995-04-10 エスジ−エス−トムソン マイクロエレクトロニクス インコーポレイテッド 静電放電入力保護回路
US5276350A (en) * 1991-02-07 1994-01-04 National Semiconductor Corporation Low reverse junction breakdown voltage zener diode for electrostatic discharge protection of integrated circuits
FR2678430B1 (fr) * 1991-06-28 1993-10-29 Sgs Thomson Microelectronics Sa Diode a avalanche dans un circuit integre bipolaire.
FR2693032B1 (fr) * 1992-06-25 1994-09-30 Sgs Thomson Microelectronics Structure de diodes de protection de plot.
FR2702308B1 (fr) * 1993-03-01 1995-05-24 Sgs Thomson Microelectronics Diode à avalanche dans un circuit intégré bipolaire.
US5446302A (en) * 1993-12-14 1995-08-29 Analog Devices, Incorporated Integrated circuit with diode-connected transistor for reducing ESD damage
US5477078A (en) * 1994-02-18 1995-12-19 Analog Devices, Incorporated Integrated circuit (IC) with a two-terminal diode device to protect metal-oxide-metal capacitors from ESD damage

Also Published As

Publication number Publication date
JPH09509532A (ja) 1997-09-22
US5477078A (en) 1995-12-19
DE69523291D1 (de) 2001-11-22
EP0745275A1 (de) 1996-12-04
EP0745275B1 (de) 2001-10-17
EP0745275A4 (de) 1997-05-21
WO1995022842A1 (en) 1995-08-24
US5594266A (en) 1997-01-14

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