DE69522936D1 - Hochspannungstreiberschaltung für induktive Lasten - Google Patents

Hochspannungstreiberschaltung für induktive Lasten

Info

Publication number
DE69522936D1
DE69522936D1 DE69522936T DE69522936T DE69522936D1 DE 69522936 D1 DE69522936 D1 DE 69522936D1 DE 69522936 T DE69522936 T DE 69522936T DE 69522936 T DE69522936 T DE 69522936T DE 69522936 D1 DE69522936 D1 DE 69522936D1
Authority
DE
Germany
Prior art keywords
high voltage
driver circuit
voltage driver
inductive loads
inductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69522936T
Other languages
English (en)
Other versions
DE69522936T2 (de
Inventor
Riccardo Depetro
Aldo Novelli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE69522936D1 publication Critical patent/DE69522936D1/de
Application granted granted Critical
Publication of DE69522936T2 publication Critical patent/DE69522936T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7817—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69522936T 1995-07-31 1995-07-31 Hochspannungstreiberschaltung für induktive Lasten Expired - Fee Related DE69522936T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP95830346A EP0757389B1 (de) 1995-07-31 1995-07-31 Hochspannungstreiberschaltung für induktive Lasten

Publications (2)

Publication Number Publication Date
DE69522936D1 true DE69522936D1 (de) 2001-10-31
DE69522936T2 DE69522936T2 (de) 2002-08-29

Family

ID=8221993

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69522936T Expired - Fee Related DE69522936T2 (de) 1995-07-31 1995-07-31 Hochspannungstreiberschaltung für induktive Lasten

Country Status (4)

Country Link
US (1) US5912495A (de)
EP (1) EP0757389B1 (de)
JP (1) JPH09134964A (de)
DE (1) DE69522936T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0859456A1 (de) * 1997-02-14 1998-08-19 Koninklijke Philips Electronics N.V. Steuerschaltung für einen Elektromotor
DE19845995A1 (de) * 1998-04-15 2000-04-13 Andreas Boehringer Stromrichter mit aktiv beeinflußter Kommutierung
JP3275850B2 (ja) * 1998-10-09 2002-04-22 日本電気株式会社 高耐圧ダイオードとその製造方法
US6346461B1 (en) * 2000-05-15 2002-02-12 The Regents Of The University Of California Electroless epitaxial etching for semiconductor applications
US6794719B2 (en) * 2001-06-28 2004-09-21 Koninklijke Philips Electronics N.V. HV-SOI LDMOS device with integrated diode to improve reliability and avalanche ruggedness
US6555877B2 (en) * 2001-08-27 2003-04-29 Semiconductor Components Industries Llc NMOSFET with negative voltage capability formed in P-type substrate and method of making the same
EP1291924A1 (de) * 2001-09-10 2003-03-12 STMicroelectronics S.r.l. MOS-Halbleiteranordnung mit einem Bodybereich
JP3713490B2 (ja) * 2003-02-18 2005-11-09 株式会社東芝 半導体装置
US20060220170A1 (en) * 2005-03-31 2006-10-05 Chih-Feng Huang High-voltage field effect transistor having isolation structure
JP4890838B2 (ja) * 2005-11-17 2012-03-07 ルネサスエレクトロニクス株式会社 半導体集積回路のレイアウト設計方法、及びレイアウト設計ツール
CN101964361B (zh) * 2009-07-24 2012-08-29 新唐科技股份有限公司 金属氧化半导体晶体管与其制造方法
JP2011238771A (ja) * 2010-05-11 2011-11-24 Hitachi Ltd 半導体装置
US10103258B2 (en) 2016-12-29 2018-10-16 Texas Instruments Incorporated Laterally diffused metal oxide semiconductor with gate poly contact within source window

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2401701C3 (de) * 1974-01-15 1978-12-21 Robert Bosch Gmbh, 7000 Stuttgart Transistorleistungsschalter
US4250829A (en) * 1978-05-30 1981-02-17 Brunswick Corporation Vapor detector for marine propulsion apparatus
US4496849A (en) * 1982-02-22 1985-01-29 General Motors Corporation Power transistor protection from substrate injection
US4847603A (en) * 1986-05-01 1989-07-11 Blanchard Clark E Automatic closed loop scaling and drift correcting system and method particularly for aircraft head up displays
IT1197279B (it) * 1986-09-25 1988-11-30 Sgs Microelettronica Spa Dispositivo integrato per schermare l'iniezione di cariche nel substrato, in particolare in circuiti di pilotaggio di carichi induttivi e/o capacitivi
IT1221839B (it) * 1987-10-09 1990-07-12 Sgs Microelettronica Spa Controllo attivo della sovratensione nel pilotaggio di carichi induttivi
JPH0716005B2 (ja) * 1988-04-08 1995-02-22 株式会社東芝 半導体装置
US4979001A (en) * 1989-06-30 1990-12-18 Micrel Incorporated Hidden zener diode structure in configurable integrated circuit
US5397914A (en) * 1992-04-30 1995-03-14 Hitachi Ltd. Power transistor device including power transistors in darlington connection and zener diode which is coupled between collector and base of power transistors and which is formed in polysilicon film
JP3158738B2 (ja) * 1992-08-17 2001-04-23 富士電機株式会社 高耐圧ｍｉｓ電界効果トランジスタおよび半導体集積回路
US5347419A (en) * 1992-12-22 1994-09-13 Eaton Corporation Current limiting solenoid driver
DE69330556T2 (de) * 1993-05-13 2002-05-16 Cons Ric Microelettronica Integrierte Schaltungsstruktur für den Schutz von Leistungsvorrichtung gegen Überspannungen
US5495123A (en) * 1994-10-31 1996-02-27 Sgs-Thomson Microelectronics, Inc. Structure to protect against below ground current injection
US5751052A (en) * 1996-04-01 1998-05-12 Motorola, Inc. Inductive driver circuit and method therefor

Also Published As

Publication number Publication date
EP0757389A1 (de) 1997-02-05
US5912495A (en) 1999-06-15
EP0757389B1 (de) 2001-09-26
DE69522936T2 (de) 2002-08-29
JPH09134964A (ja) 1997-05-20

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee