DE69514139T2 - Optoelektronische Anordnungen mit beständiger Photoleitfähigkeit - Google Patents

Optoelektronische Anordnungen mit beständiger Photoleitfähigkeit

Info

Publication number
DE69514139T2
DE69514139T2 DE69514139T DE69514139T DE69514139T2 DE 69514139 T2 DE69514139 T2 DE 69514139T2 DE 69514139 T DE69514139 T DE 69514139T DE 69514139 T DE69514139 T DE 69514139T DE 69514139 T2 DE69514139 T2 DE 69514139T2
Authority
DE
Germany
Prior art keywords
photoconductivity
stable
optoelectronic devices
optoelectronic
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69514139T
Other languages
English (en)
Other versions
DE69514139D1 (de
Inventor
James D Chadi
George E Devlin
Richard A Linke
Robert L Macdonald
Tineke Thio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69514139D1 publication Critical patent/DE69514139D1/de
Publication of DE69514139T2 publication Critical patent/DE69514139T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/005—Arrangements for writing information into, or reading information out from, a digital store with combined beam-and individual cell access
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Holo Graphy (AREA)
  • Light Receiving Elements (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
DE69514139T 1994-04-08 1995-04-04 Optoelektronische Anordnungen mit beständiger Photoleitfähigkeit Expired - Fee Related DE69514139T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US22504794A 1994-04-08 1994-04-08

Publications (2)

Publication Number Publication Date
DE69514139D1 DE69514139D1 (de) 2000-02-03
DE69514139T2 true DE69514139T2 (de) 2000-07-20

Family

ID=22843300

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69514139T Expired - Fee Related DE69514139T2 (de) 1994-04-08 1995-04-04 Optoelektronische Anordnungen mit beständiger Photoleitfähigkeit

Country Status (4)

Country Link
US (1) US5920409A (de)
EP (1) EP0678923B1 (de)
JP (1) JP3060875B2 (de)
DE (1) DE69514139T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19715898A1 (de) * 1997-04-16 1998-10-22 Polus Michael Substrat mit Leiterbahnvernetzung und Verfahren zu dessen Herstellung
US6363097B1 (en) * 1998-09-18 2002-03-26 Nec Corporation Semiconductor laser with a rewritable wavelength stabilizer
US6046830A (en) * 1998-09-29 2000-04-04 Nec Research Institute, Inc. Dynamic refresh for optical data storage
US6841406B2 (en) * 2001-11-06 2005-01-11 Edward Brittain Stokes Methods and apparatus for a semiconductor device
US7331584B2 (en) 2004-09-17 2008-02-19 Black & Decker Inc. Chuck with nutating gear reduction
US11662511B2 (en) 2020-07-22 2023-05-30 Samsung Electronics Co., Ltd. Beam expander and method of operating the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS567632B2 (de) * 1973-08-22 1981-02-18
FR2476944A1 (fr) * 1980-02-21 1981-08-28 Bois Daniel Relais optoelectronique integre utilisant un semiconducteur a photoconductivite persistante et matrice de tels relais
US4838630A (en) * 1987-12-21 1989-06-13 Physical Optics Corporation Holographic planar optical interconnect
US4927220A (en) * 1987-12-31 1990-05-22 Microelectronic & Computer Technology Corp. System and method for photorefractive holographic recording and signal processing
US4948212A (en) * 1988-08-22 1990-08-14 California Institute Of Technology Optical processing in III-V and II-VI compound semiconductors
US5072122A (en) * 1990-10-15 1991-12-10 Kansas State University Research Foundation Charge storage image device using persistent photoconductivity crystals
US5101109A (en) * 1990-10-15 1992-03-31 Kansas State University Research Foundation Persistent photoconductivity quenching effect crystals and electrical apparatus using same
US5237434A (en) * 1991-11-05 1993-08-17 Mcnc Microelectronic module having optical and electrical interconnects
US5305123A (en) * 1992-01-09 1994-04-19 Physical Optics Corporation Light controlled spatial and angular electromagnetic wave modulator

Also Published As

Publication number Publication date
US5920409A (en) 1999-07-06
EP0678923A3 (de) 1996-02-28
JPH07283424A (ja) 1995-10-27
EP0678923A2 (de) 1995-10-25
JP3060875B2 (ja) 2000-07-10
EP0678923B1 (de) 1999-12-29
DE69514139D1 (de) 2000-02-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee