DE69514066T2 - Ultrakompakte, gütegeschaltete Mikrolaser - Google Patents
Ultrakompakte, gütegeschaltete MikrolaserInfo
- Publication number
- DE69514066T2 DE69514066T2 DE69514066T DE69514066T DE69514066T2 DE 69514066 T2 DE69514066 T2 DE 69514066T2 DE 69514066 T DE69514066 T DE 69514066T DE 69514066 T DE69514066 T DE 69514066T DE 69514066 T2 DE69514066 T2 DE 69514066T2
- Authority
- DE
- Germany
- Prior art keywords
- ultra
- compact
- switched microlaser
- microlaser
- switched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2383—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/025—Constructional details of solid state lasers, e.g. housings or mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/1063—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a solid state device provided with at least one potential jump barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/115—Q-switching using intracavity electro-optic devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/319,192 US5488619A (en) | 1994-10-06 | 1994-10-06 | Ultracompact Q-switched microlasers and related method |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69514066D1 DE69514066D1 (de) | 2000-01-27 |
DE69514066T2 true DE69514066T2 (de) | 2000-05-25 |
Family
ID=23241236
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69514066T Expired - Fee Related DE69514066T2 (de) | 1994-10-06 | 1995-09-15 | Ultrakompakte, gütegeschaltete Mikrolaser |
Country Status (4)
Country | Link |
---|---|
US (1) | US5488619A (de) |
EP (1) | EP0706244B1 (de) |
JP (1) | JP2770939B2 (de) |
DE (1) | DE69514066T2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016208747A1 (de) * | 2016-05-20 | 2017-11-23 | Siemens Aktiengesellschaft | Laserspektroskopie-System |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2734092B1 (fr) * | 1995-05-12 | 1997-06-06 | Commissariat Energie Atomique | Microlaser monolithique declenche et materiau non lineaire intracavite |
FR2736217B1 (fr) * | 1995-06-27 | 1997-08-08 | Commissariat Energie Atomique | Cavite microlaser et microlaser solide impulsionnel a declenchement actif par micromodulateur |
JP3616181B2 (ja) * | 1995-10-26 | 2005-02-02 | 弘昌 伊藤 | 光デバイス |
FR2747192B1 (fr) * | 1996-04-04 | 1998-04-30 | Commissariat Energie Atomique | Dispositif de detection de gaz a distance comportant un microlaser |
FR2751467B1 (fr) * | 1996-07-17 | 1998-10-02 | Commissariat Energie Atomique | Procede d'assemblage de deux structures et dispositif obtenu par le procede. applications aux microlasers |
FR2751480A1 (fr) * | 1996-07-19 | 1998-01-23 | Commissariat Energie Atomique | Microlaser solide a declenchement actif par semi-conducteur |
FR2751796B1 (fr) * | 1996-07-26 | 1998-08-28 | Commissariat Energie Atomique | Microlaser soilde, a pompage optique par laser semi-conducteur a cavite verticale |
FR2757319B1 (fr) * | 1996-12-16 | 1999-01-08 | Commissariat Energie Atomique | Microlaser a frequence d'emission modulee a l'aide d'un element piezoelectrique ou electro-optique |
US20040036957A1 (en) * | 1997-03-21 | 2004-02-26 | Imra America, Inc. | Microchip-Yb fiber hybrid optical amplifier for micro-machining and marking |
US7656578B2 (en) * | 1997-03-21 | 2010-02-02 | Imra America, Inc. | Microchip-Yb fiber hybrid optical amplifier for micro-machining and marking |
US7576909B2 (en) * | 1998-07-16 | 2009-08-18 | Imra America, Inc. | Multimode amplifier for amplifying single mode light |
US6078598A (en) * | 1997-04-25 | 2000-06-20 | Nikon Corporation | Laser apparatus, pulsed laser oscillation method and projection exposure apparatus using the same |
SE9702175D0 (sv) * | 1997-06-06 | 1997-06-06 | Geotronics Ab | A laser |
US6057871A (en) * | 1998-07-10 | 2000-05-02 | Litton Systems, Inc. | Laser marking system and associated microlaser apparatus |
FR2777124A1 (fr) * | 1998-08-06 | 1999-10-08 | Commissariat Energie Atomique | Projecteur d'images a mosaique de microlasers |
DE19840928A1 (de) * | 1998-09-08 | 2000-03-09 | Heidelberger Druckmasch Ag | Multibeam Laser Scanner |
FR2784194A1 (fr) * | 1998-10-01 | 2000-04-07 | Commissariat Energie Atomique | Dispositif d'imagerie utilisant un ensemble de microlasers et procede de fabrication de ceux-ci |
US6275512B1 (en) * | 1998-11-25 | 2001-08-14 | Imra America, Inc. | Mode-locked multimode fiber laser pulse source |
US6219361B1 (en) | 1999-06-21 | 2001-04-17 | Litton Systems, Inc. | Side pumped, Q-switched microlaser |
US6377593B1 (en) | 1999-06-21 | 2002-04-23 | Northrop Grumman Corporation | Side pumped Q-switched microlaser and associated fabrication method |
US6813285B2 (en) | 1999-06-21 | 2004-11-02 | Litton Systems, Inc. | Q-switched microlaser |
US6888871B1 (en) * | 2000-07-12 | 2005-05-03 | Princeton Optronics, Inc. | VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system |
US6580732B1 (en) * | 2000-07-14 | 2003-06-17 | Litton Systems, Inc. | Multiple mode laser |
US6501772B1 (en) | 2000-08-11 | 2002-12-31 | Litton Systems, Inc. | Microlaser assembly having a microresonator and aligned electro-optic components |
FR2814599B1 (fr) * | 2000-09-27 | 2005-05-20 | Commissariat Energie Atomique | Dispositif laser de forte puissance crete et application a la generation de lumiere dans l'extreme ultra violet |
JP4407039B2 (ja) * | 2000-11-02 | 2010-02-03 | 三菱電機株式会社 | 固体レーザ装置および固体レーザ装置システム |
US6603498B1 (en) | 2000-11-28 | 2003-08-05 | Coherent, Inc. | Printer head with linear array of individually addressable diode-lasers |
US7126976B2 (en) * | 2001-03-09 | 2006-10-24 | Waveguide Solutions, Inc. | Solid state lasers and a method for their production |
US6667999B2 (en) * | 2001-08-17 | 2003-12-23 | Textron Corporation | Cooling of high power laser systems |
KR100992120B1 (ko) * | 2003-03-13 | 2010-11-04 | 삼성전자주식회사 | 규소 결정화 시스템 및 규소 결정화 방법 |
US20070121689A1 (en) * | 2003-09-22 | 2007-05-31 | Snake Creek Lasers Llc | Methods for Producing Diode-Pumped Micro Lasers |
US20070166852A1 (en) * | 2003-09-22 | 2007-07-19 | Snake Creek Lasers Llc | Diode-pumped microlasers including resonator microchips and methods for producing the same |
US20060083276A1 (en) * | 2004-09-28 | 2006-04-20 | Snake Creek Lasers, Llc. | Cryogenically cooled solid state lasers |
US7724797B2 (en) * | 2006-04-27 | 2010-05-25 | Spectralus Corporation | Solid-state laser arrays using nonlinear frequency conversion in periodically poled materials |
US7949022B2 (en) * | 2006-04-27 | 2011-05-24 | Lockheed Martin Corporation | Diode pumping of a laser gain medium |
US20070280305A1 (en) * | 2006-06-05 | 2007-12-06 | Oved Zucker | Q-switched cavity dumped laser array |
US20160261086A1 (en) * | 2015-03-05 | 2016-09-08 | Corning Incorporated | Tunable light modulation using graphene |
US9548585B1 (en) * | 2015-07-16 | 2017-01-17 | U.S. Department Of Energy | Multi-point laser ignition device |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3611231A (en) * | 1969-11-17 | 1971-10-05 | Us Army | Q-switched frequency doubling laser |
US3699474A (en) * | 1971-11-20 | 1972-10-17 | Atomic Energy Commission | Multiple beam laser system |
US3902061A (en) * | 1973-09-12 | 1975-08-26 | Xerox Corp | Digital optical computer techniques |
US4439861A (en) * | 1981-08-07 | 1984-03-27 | Mrj, Inc. | Solid state laser with controlled optical pumping |
USRE34192E (en) * | 1985-05-01 | 1993-03-09 | Spectra-Physics, Laser Diode Systems, Inc. | Miniaturized Q-switched diode pumped solid state laser |
US4727341A (en) * | 1985-06-28 | 1988-02-23 | Nec Corporation | Optical modulator |
US4764933A (en) * | 1986-08-15 | 1988-08-16 | Stanford University | Diode pumped low doped Nd 3+ glass laser |
US4819239A (en) * | 1987-05-06 | 1989-04-04 | The United States Of America As Represented By The Secretary Of The Army | Laser Q-switch |
US4953166A (en) * | 1988-02-02 | 1990-08-28 | Massachusetts Institute Of Technology | Microchip laser |
US4860304A (en) * | 1988-02-02 | 1989-08-22 | Massachusetts Institute Of Technology | Solid state microlaser |
US5115445A (en) * | 1988-02-02 | 1992-05-19 | Massachusetts Institute Of Technology | Microchip laser array |
US5175739A (en) * | 1988-09-09 | 1992-12-29 | Fujitsu Limited | Semiconductor optical device having a non-linear operational characteristic |
US5105302A (en) * | 1989-02-23 | 1992-04-14 | Kokusai Denshin Denwa Kabushiki Kaisha | Spatial light modulator |
CA1309482C (en) * | 1989-04-21 | 1992-10-27 | Henry M. Van Driel | Laser mode-coupling via a pulsed modulator |
US5132977A (en) * | 1989-09-07 | 1992-07-21 | Massachusetts Institute Of Technology | Coupled-cavity Q-switched laser |
US4982405A (en) * | 1989-09-07 | 1991-01-01 | Massachusette Institute Of Technology | Coupled-cavity Q-switched laser |
FR2659639B1 (fr) * | 1990-03-13 | 1992-06-12 | Quartz & Silice | Oxydes mixtes de strontium et de lanthanide et laser utilisant des monocristaux de ces oxydes. |
FR2661566B1 (fr) * | 1990-04-25 | 1995-03-31 | Commissariat Energie Atomique | Laser compact a semi-conducteur du type a pompage electronique. |
US5166946A (en) * | 1990-10-12 | 1992-11-24 | Martin Marietta Corporation | Apparatus for and method of controlling the emission of a laser |
JPH04171778A (ja) * | 1990-11-05 | 1992-06-18 | Hoya Corp | 固体レーザ装置 |
US5151915A (en) * | 1990-12-27 | 1992-09-29 | Xerox Corporation | Array and method of operating a modulated solid state laser array with reduced thermal crosstalk |
US5105434A (en) * | 1991-05-10 | 1992-04-14 | The United States Of America As Represented By The United States Department Of Energy | AlGaAs diode pumped tunable chromium lasers |
US5226051A (en) * | 1991-06-04 | 1993-07-06 | Lightwave Electronics | Laser pump control for output power stabilization |
JP2858488B2 (ja) * | 1991-06-13 | 1999-02-17 | 三菱電機株式会社 | 光 源 |
US5208823A (en) * | 1991-09-03 | 1993-05-04 | Applied Solar Energy Corporation | Optically isolated laser diode array |
JPH0613699A (ja) * | 1992-06-24 | 1994-01-21 | Fuji Xerox Co Ltd | マルチビーム半導体レーザーアレイ |
JPH0688979A (ja) * | 1992-09-08 | 1994-03-29 | Sumitomo Cement Co Ltd | Qスイッチ・第2高調波発生複合素子 |
-
1994
- 1994-10-06 US US08/319,192 patent/US5488619A/en not_active Expired - Lifetime
-
1995
- 1995-09-15 EP EP95114569A patent/EP0706244B1/de not_active Expired - Lifetime
- 1995-09-15 DE DE69514066T patent/DE69514066T2/de not_active Expired - Fee Related
- 1995-10-05 JP JP7258476A patent/JP2770939B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016208747A1 (de) * | 2016-05-20 | 2017-11-23 | Siemens Aktiengesellschaft | Laserspektroskopie-System |
Also Published As
Publication number | Publication date |
---|---|
EP0706244A2 (de) | 1996-04-10 |
DE69514066D1 (de) | 2000-01-27 |
JP2770939B2 (ja) | 1998-07-02 |
EP0706244A3 (de) | 1997-11-19 |
US5488619A (en) | 1996-01-30 |
JPH08125286A (ja) | 1996-05-17 |
EP0706244B1 (de) | 1999-12-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NORTHROP GRUMMAN CORP. (N.D.GES.D.STAATES DELAWARE |
|
8339 | Ceased/non-payment of the annual fee |