FR2757319B1 - Microlaser a frequence d'emission modulee a l'aide d'un element piezoelectrique ou electro-optique - Google Patents

Microlaser a frequence d'emission modulee a l'aide d'un element piezoelectrique ou electro-optique

Info

Publication number
FR2757319B1
FR2757319B1 FR9615432A FR9615432A FR2757319B1 FR 2757319 B1 FR2757319 B1 FR 2757319B1 FR 9615432 A FR9615432 A FR 9615432A FR 9615432 A FR9615432 A FR 9615432A FR 2757319 B1 FR2757319 B1 FR 2757319B1
Authority
FR
France
Prior art keywords
microlaser
piezoelectric
electro
modulated
optical element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9615432A
Other languages
English (en)
Other versions
FR2757319A1 (fr
Inventor
Philippe Nerin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR9615432A priority Critical patent/FR2757319B1/fr
Priority to PCT/FR1997/002313 priority patent/WO1998027628A1/fr
Publication of FR2757319A1 publication Critical patent/FR2757319A1/fr
Application granted granted Critical
Publication of FR2757319B1 publication Critical patent/FR2757319B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/107—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using electro-optic devices, e.g. exhibiting Pockels or Kerr effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1655—Solid materials characterised by a crystal matrix silicate
    • H01S3/166—La3Ga5SiO14 [LGS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
FR9615432A 1996-12-16 1996-12-16 Microlaser a frequence d'emission modulee a l'aide d'un element piezoelectrique ou electro-optique Expired - Fee Related FR2757319B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR9615432A FR2757319B1 (fr) 1996-12-16 1996-12-16 Microlaser a frequence d'emission modulee a l'aide d'un element piezoelectrique ou electro-optique
PCT/FR1997/002313 WO1998027628A1 (fr) 1996-12-16 1997-12-16 Microlaser a frequence d'emission modulee a l'aide d'un element piezoelectrique ou electro-optique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9615432A FR2757319B1 (fr) 1996-12-16 1996-12-16 Microlaser a frequence d'emission modulee a l'aide d'un element piezoelectrique ou electro-optique

Publications (2)

Publication Number Publication Date
FR2757319A1 FR2757319A1 (fr) 1998-06-19
FR2757319B1 true FR2757319B1 (fr) 1999-01-08

Family

ID=9498704

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9615432A Expired - Fee Related FR2757319B1 (fr) 1996-12-16 1996-12-16 Microlaser a frequence d'emission modulee a l'aide d'un element piezoelectrique ou electro-optique

Country Status (2)

Country Link
FR (1) FR2757319B1 (fr)
WO (1) WO1998027628A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2800364B1 (fr) 1999-10-29 2002-02-15 Commissariat Energie Atomique Microcavite active accordable et procede de fabrication de microcavite active accordable
CN109888601B (zh) * 2019-04-08 2024-07-26 北京理工大学 一种用于频差可调谐的双频微片激光器的夹持装置
CN116031744B (zh) * 2023-02-22 2023-06-27 济南快谱光电技术有限公司 一种大口径纵向电光器件及制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5918932A (ja) * 1982-07-23 1984-01-31 Matsushita Electric Ind Co Ltd 光偏向装置
US4860304A (en) * 1988-02-02 1989-08-22 Massachusetts Institute Of Technology Solid state microlaser
DE4125720A1 (de) * 1991-08-02 1993-02-04 Deutsche Aerospace Mikrokristall-laser
DE4306919C2 (de) * 1993-03-05 1995-10-05 Daimler Benz Aerospace Ag Verfahren zur Abstimmung eines monolithischen Einfrequenz-Mirokristall-Lasers
US5488619A (en) * 1994-10-06 1996-01-30 Trw Inc. Ultracompact Q-switched microlasers and related method

Also Published As

Publication number Publication date
FR2757319A1 (fr) 1998-06-19
WO1998027628A1 (fr) 1998-06-25

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Legal Events

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