DE69511779T2 - Lumineszenzdioden-Anordnung und Verfahren zu ihrer Herstellung - Google Patents

Lumineszenzdioden-Anordnung und Verfahren zu ihrer Herstellung

Info

Publication number
DE69511779T2
DE69511779T2 DE69511779T DE69511779T DE69511779T2 DE 69511779 T2 DE69511779 T2 DE 69511779T2 DE 69511779 T DE69511779 T DE 69511779T DE 69511779 T DE69511779 T DE 69511779T DE 69511779 T2 DE69511779 T2 DE 69511779T2
Authority
DE
Germany
Prior art keywords
arrangement
production
luminescent diodes
luminescent
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69511779T
Other languages
English (en)
Other versions
DE69511779D1 (de
Inventor
Thomas E Orlowski
Sophie V Vandebroek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of DE69511779D1 publication Critical patent/DE69511779D1/de
Publication of DE69511779T2 publication Critical patent/DE69511779T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/96—Porous semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Led Devices (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
DE69511779T 1994-06-08 1995-06-06 Lumineszenzdioden-Anordnung und Verfahren zu ihrer Herstellung Expired - Fee Related DE69511779T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/257,247 US5510633A (en) 1994-06-08 1994-06-08 Porous silicon light emitting diode arrays and method of fabrication

Publications (2)

Publication Number Publication Date
DE69511779D1 DE69511779D1 (de) 1999-10-07
DE69511779T2 true DE69511779T2 (de) 1999-12-23

Family

ID=22975490

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69511779T Expired - Fee Related DE69511779T2 (de) 1994-06-08 1995-06-06 Lumineszenzdioden-Anordnung und Verfahren zu ihrer Herstellung

Country Status (4)

Country Link
US (2) US5510633A (de)
EP (1) EP0687010B1 (de)
JP (1) JP3902252B2 (de)
DE (1) DE69511779T2 (de)

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US6058945A (en) * 1996-05-28 2000-05-09 Canon Kabushiki Kaisha Cleaning methods of porous surface and semiconductor surface
JP3194423B2 (ja) * 1996-05-30 2001-07-30 キヤノン株式会社 画像形成装置
US5920078A (en) * 1996-06-20 1999-07-06 Frey; Jeffrey Optoelectronic device using indirect-bandgap semiconductor material
US6011575A (en) * 1996-09-10 2000-01-04 Konica Corporation Image forming apparatus with line-shaped image exposure means
US20080136955A1 (en) * 1996-09-27 2008-06-12 Tessera North America. Integrated camera and associated methods
US8153957B2 (en) * 1996-09-27 2012-04-10 Digitaloptics Corporation East Integrated optical imaging systems including an interior space between opposing substrates and associated methods
US6096155A (en) * 1996-09-27 2000-08-01 Digital Optics Corporation Method of dicing wafer level integrated multiple optical elements
KR100586714B1 (ko) * 1997-02-17 2006-06-08 세이코 엡슨 가부시키가이샤 전류 구동형 발광 표시 장치
US6757381B1 (en) * 1998-08-13 2004-06-29 Eugene Robert Worley Design of telephone line interface circuits using a two chip opto-coupler with LEDs integrated onto silicon chips
US6456313B1 (en) * 1999-09-13 2002-09-24 Ricoh Company Ltd. Method and apparatus for optical writing capable of effectively performing an accurate scanning
US6580094B1 (en) * 1999-10-29 2003-06-17 Semiconductor Energy Laboratory Co., Ltd. Electro luminescence display device
US6790785B1 (en) 2000-09-15 2004-09-14 The Board Of Trustees Of The University Of Illinois Metal-assisted chemical etch porous silicon formation method
US6762134B2 (en) 2000-11-27 2004-07-13 The Board Of Trustees Of The University Of Illinois Metal-assisted chemical etch to produce porous group III-V materials
JP3608615B2 (ja) * 2001-04-19 2005-01-12 ソニー株式会社 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
US20030129438A1 (en) * 2001-12-14 2003-07-10 Becker Kevin Harris Dual cure B-stageable adhesive for die attach
US6833629B2 (en) 2001-12-14 2004-12-21 National Starch And Chemical Investment Holding Corporation Dual cure B-stageable underfill for wafer level
US6955745B1 (en) * 2002-08-01 2005-10-18 University Of Florida Research Foundation, Inc. Method of spark-processing silicon and resulting materials
KR100537278B1 (ko) * 2003-09-05 2005-12-19 주식회사 하이닉스반도체 플래쉬 메모리소자의 제조방법
US20070178658A1 (en) * 2004-06-21 2007-08-02 Kelley Tommie W Patterning and aligning semiconducting nanoparticles
JP2007305929A (ja) * 2006-05-15 2007-11-22 Sharp Corp Ｌｅｄ表示装置及びｌｅｄ照明装置
DE102006047244B4 (de) * 2006-10-04 2018-01-18 Infineon Technologies Austria Ag Halbleiterbauelement mit einem monokristallinen Halbleiterkörper und Verfahren zur Herstellung desselben
WO2008045301A1 (en) * 2006-10-05 2008-04-17 Hitachi Chemical Co., Ltd. Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same
WO2009033266A1 (en) * 2007-09-10 2009-03-19 The Governors Of The University Of Alberta Light emitting semiconductor diode
SE534600C2 (sv) 2010-03-23 2011-10-18 Vaederstad Verken Ab Radenhet för en precisionssåmaskin, precisionssåmaskin samt förfarande för precisionssådd
US9419198B2 (en) 2010-10-22 2016-08-16 California Institute Of Technology Nanomesh phononic structures for low thermal conductivity and thermoelectric energy conversion materials
US20130019918A1 (en) 2011-07-18 2013-01-24 The Regents Of The University Of Michigan Thermoelectric devices, systems and methods
US9595653B2 (en) 2011-10-20 2017-03-14 California Institute Of Technology Phononic structures and related devices and methods
US10205080B2 (en) 2012-01-17 2019-02-12 Matrix Industries, Inc. Systems and methods for forming thermoelectric devices
CN104756268B (zh) 2012-08-17 2017-10-24 美特瑞克斯实业公司 用于形成热电装置的系统和方法
WO2014070795A1 (en) 2012-10-31 2014-05-08 Silicium Energy, Inc. Methods for forming thermoelectric elements
WO2015148554A1 (en) 2014-03-25 2015-10-01 Silicium Energy, Inc. Thermoelectric devices and systems
TW201809931A (zh) 2016-05-03 2018-03-16 麥崔克斯工業股份有限公司 熱電裝置及系統
USD819627S1 (en) 2016-11-11 2018-06-05 Matrix Industries, Inc. Thermoelectric smartwatch

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Publication number Priority date Publication date Assignee Title
JPH0736449B2 (ja) * 1984-11-02 1995-04-19 ゼロツクス コーポレーシヨン 発光ダイオード印刷アレイの製造法
US4587717A (en) * 1985-05-02 1986-05-13 Xerox Corporation LED printing array fabrication method
DE69033837T2 (de) * 1989-07-25 2002-05-29 Nippon Sheet Glass Co Ltd Lichtemittierende Vorrichtung
GB8927709D0 (en) * 1989-12-07 1990-02-07 Secretary Of The State For Def Silicon quantum wires
US5206749A (en) * 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
DE4126955C2 (de) * 1991-08-14 1994-05-05 Fraunhofer Ges Forschung Verfahren zum Herstellen von elektrolumineszenten Siliziumstrukturen
US5206523A (en) * 1991-08-29 1993-04-27 Goesele Ulrich M Microporous crystalline silicon of increased band-gap for semiconductor applications
US5285078A (en) * 1992-01-24 1994-02-08 Nippon Steel Corporation Light emitting element with employment of porous silicon and optical device utilizing light emitting element
EP0553856B1 (de) * 1992-01-31 2002-04-17 Canon Kabushiki Kaisha Verfahren zur Herstellung eines Halbleitersubstrats
JPH05283723A (ja) * 1992-04-02 1993-10-29 Kanegafuchi Chem Ind Co Ltd 光電素子
US5331180A (en) * 1992-04-30 1994-07-19 Fujitsu Limited Porous semiconductor light emitting device
US5272355A (en) * 1992-05-20 1993-12-21 Spire Corporation Optoelectronic switching and display device with porous silicon
DE4231310C1 (de) * 1992-09-18 1994-03-24 Siemens Ag Verfahren zur Herstellung eines Bauelementes mit porösem Silizium
US5454915A (en) * 1992-10-06 1995-10-03 Kulite Semiconductor Products, Inc. Method of fabricating porous silicon carbide (SiC)
US5324965A (en) * 1993-03-26 1994-06-28 The United States Of America As Represented By The Secretary Of The Army Light emitting diode with electro-chemically etched porous silicon
US5397429A (en) * 1993-09-14 1995-03-14 University Of Florida Method of manufacturing photoluminescing porous silicon using spark erosion
US5438210A (en) * 1993-10-22 1995-08-01 Worley; Eugene R. Optical isolation connections using integrated circuit techniques

Also Published As

Publication number Publication date
DE69511779D1 (de) 1999-10-07
US5510633A (en) 1996-04-23
US5552328A (en) 1996-09-03
EP0687010B1 (de) 1999-09-01
EP0687010A1 (de) 1995-12-13
JP3902252B2 (ja) 2007-04-04
JPH088459A (ja) 1996-01-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee