DE69507077D1 - Lichtgesteuerter Heterostruktur-Halbleiterbaustein zur Erzeugung von Mikrowellen - Google Patents

Lichtgesteuerter Heterostruktur-Halbleiterbaustein zur Erzeugung von Mikrowellen

Info

Publication number
DE69507077D1
DE69507077D1 DE69507077T DE69507077T DE69507077D1 DE 69507077 D1 DE69507077 D1 DE 69507077D1 DE 69507077 T DE69507077 T DE 69507077T DE 69507077 T DE69507077 T DE 69507077T DE 69507077 D1 DE69507077 D1 DE 69507077D1
Authority
DE
Germany
Prior art keywords
controlled
light
semiconductor device
generating microwaves
heterostructure semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69507077T
Other languages
English (en)
Other versions
DE69507077T2 (de
Inventor
Person Henri Le
Christophe Minot
Jean-Francois Palmier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oclaro North America Inc
Original Assignee
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Telecom SA filed Critical France Telecom SA
Application granted granted Critical
Publication of DE69507077D1 publication Critical patent/DE69507077D1/de
Publication of DE69507077T2 publication Critical patent/DE69507077T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Recrystallisation Techniques (AREA)
DE69507077T 1994-04-28 1995-04-26 Lichtgesteuerter Heterostruktur-Halbleiterbaustein zur Erzeugung von Mikrowellen Expired - Fee Related DE69507077T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9405157A FR2719417B1 (fr) 1994-04-28 1994-04-28 Composant à hétérostructure semi-conductrice, commande par la lumière pour la génération d'oscillations hyperfréquences.

Publications (2)

Publication Number Publication Date
DE69507077D1 true DE69507077D1 (de) 1999-02-18
DE69507077T2 DE69507077T2 (de) 1999-06-24

Family

ID=9462619

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69507077T Expired - Fee Related DE69507077T2 (de) 1994-04-28 1995-04-26 Lichtgesteuerter Heterostruktur-Halbleiterbaustein zur Erzeugung von Mikrowellen

Country Status (4)

Country Link
US (1) US5703379A (de)
EP (1) EP0684653B1 (de)
DE (1) DE69507077T2 (de)
FR (1) FR2719417B1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE505753C3 (sv) * 1996-01-11 1997-10-06 Imc Ind Mikroelektronikcentrum Strukturer foer temperatursensorer och infraroeddetektorer
JP3177962B2 (ja) * 1998-05-08 2001-06-18 日本電気株式会社 プレーナ型アバランシェフォトダイオード
US6417528B1 (en) * 2000-01-28 2002-07-09 Agere Systems Guardian Corp. High speed semiconductor photodetector
US6794631B2 (en) 2002-06-07 2004-09-21 Corning Lasertron, Inc. Three-terminal avalanche photodiode
US6846172B2 (en) * 2002-06-07 2005-01-25 The Procter & Gamble Company Embossing apparatus
DE10315640A1 (de) 2003-04-04 2004-10-14 Ignatov, Konstantin Verfahren zur kontrollierten Freisetzung von Komponenten in eine Lösung
US7008806B1 (en) * 2004-08-24 2006-03-07 The United States Of America As Represented By The Secretary Of The Army Multi-subband criterion for the design of a double-barrier quantum-well intrinsic oscillator
US8975614B2 (en) 2011-08-23 2015-03-10 Micron Technology, Inc. Wavelength converters for solid state lighting devices, and associated systems and methods
US9331252B2 (en) 2011-08-23 2016-05-03 Micron Technology, Inc. Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440425A (en) * 1966-04-27 1969-04-22 Bell Telephone Labor Inc Gunn-effect devices
JPS59161083A (ja) * 1983-02-28 1984-09-11 Yokogawa Hewlett Packard Ltd フオト・ダイオ−ド
JPS6016474A (ja) * 1983-07-08 1985-01-28 Nec Corp ヘテロ多重接合型光検出器
US5034783A (en) * 1990-07-27 1991-07-23 At&T Bell Laboratories Semiconductor device including cascadable polarization independent heterostructure
JP2906713B2 (ja) * 1991-03-29 1999-06-21 三菱電機株式会社 光素子の多重安定性取得方法
JP3045198B2 (ja) * 1991-08-02 2000-05-29 日本電信電話株式会社 共鳴トンネル型フォトトランジスタ
KR970011140B1 (ko) * 1993-12-08 1997-07-07 한국전자통신연구원 공명 투과광전 소자의 구조

Also Published As

Publication number Publication date
EP0684653A1 (de) 1995-11-29
DE69507077T2 (de) 1999-06-24
FR2719417B1 (fr) 1996-07-19
EP0684653B1 (de) 1999-01-07
US5703379A (en) 1997-12-30
FR2719417A1 (fr) 1995-11-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AVANEX CORP.(N.D.GES.D.STAATES DELAWARE), FREMONT,

8339 Ceased/non-payment of the annual fee