DE69425295T2 - Protection diode for a transistor - Google Patents

Protection diode for a transistor

Info

Publication number
DE69425295T2
DE69425295T2 DE69425295T DE69425295T DE69425295T2 DE 69425295 T2 DE69425295 T2 DE 69425295T2 DE 69425295 T DE69425295 T DE 69425295T DE 69425295 T DE69425295 T DE 69425295T DE 69425295 T2 DE69425295 T2 DE 69425295T2
Authority
DE
Germany
Prior art keywords
transistor
protection diode
diode
protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69425295T
Other languages
German (de)
Other versions
DE69425295D1 (en
Inventor
Ryu Saitoh
Masahito Otsuki
Akira Nishiura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Application granted granted Critical
Publication of DE69425295D1 publication Critical patent/DE69425295D1/en
Publication of DE69425295T2 publication Critical patent/DE69425295T2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7808—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a breakdown diode, e.g. Zener diode
DE69425295T 1993-04-22 1994-04-19 Protection diode for a transistor Expired - Fee Related DE69425295T2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09470693A JP3216743B2 (en) 1993-04-22 1993-04-22 Protection diode for transistor

Publications (2)

Publication Number Publication Date
DE69425295D1 DE69425295D1 (en) 2000-08-24
DE69425295T2 true DE69425295T2 (en) 2000-11-30

Family

ID=14117611

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69425295T Expired - Fee Related DE69425295T2 (en) 1993-04-22 1994-04-19 Protection diode for a transistor

Country Status (4)

Country Link
US (1) US5561313A (en)
EP (1) EP0621637B1 (en)
JP (1) JP3216743B2 (en)
DE (1) DE69425295T2 (en)

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US5602046A (en) * 1996-04-12 1997-02-11 National Semiconductor Corporation Integrated zener diode protection structures and fabrication methods for DMOS power devices
SE513283C2 (en) * 1996-07-26 2000-08-14 Ericsson Telefon Ab L M MOS transistor structure with extended operating region
US6304126B1 (en) 1997-09-29 2001-10-16 Stmicroelectronics S.A. Protection circuit that can be associated with a filter
US6388496B1 (en) * 1999-04-15 2002-05-14 Kabushiki Kaisha Toshiba Semiconductor output circuit
FR2795237B1 (en) * 1999-06-15 2003-07-11 St Microelectronics Sa PROTECTION AND FILTERING CIRCUIT
JP3317347B2 (en) * 1999-09-02 2002-08-26 日本電気株式会社 Semiconductor device having diode and method of manufacturing the same
AU2000267698A1 (en) * 2000-01-19 2001-07-31 Fabtech, Inc. Distributed reverse surge guard
US6717229B2 (en) 2000-01-19 2004-04-06 Fabtech, Inc. Distributed reverse surge guard
US6462393B2 (en) 2001-03-20 2002-10-08 Fabtech, Inc. Schottky device
US6794719B2 (en) * 2001-06-28 2004-09-21 Koninklijke Philips Electronics N.V. HV-SOI LDMOS device with integrated diode to improve reliability and avalanche ruggedness
US6756642B2 (en) * 2002-11-07 2004-06-29 Taiwan Semiconductor Manufacturing Co., Ltd Integrated circuit having improved ESD protection
US7781826B2 (en) * 2006-11-16 2010-08-24 Alpha & Omega Semiconductor, Ltd. Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter
DE102006047243A1 (en) * 2006-05-15 2007-11-22 Infineon Technologies Ag On-board supply system for use in motor vehicle, has field-effect-controlled power transistor applying supply voltage of system to load by logic circuit, where power transistor is in form of lower reverse voltage class
JP2009124169A (en) * 2009-02-02 2009-06-04 Renesas Technology Corp Semiconductor device, and its manufacturing method
US8395333B2 (en) * 2009-02-13 2013-03-12 Koninklijke Philips Electronics N.V. Electro magnetic ballast for a gas discharge lamp
US8482078B2 (en) 2011-05-10 2013-07-09 International Business Machines Corporation Integrated circuit diode
US9048108B2 (en) 2012-05-22 2015-06-02 International Business Machines Corporation Integrated circuit with on chip planar diode and CMOS devices
JP5830669B2 (en) 2013-05-29 2015-12-09 パナソニックＩｐマネジメント株式会社 Semiconductor device
WO2018140842A2 (en) * 2017-01-30 2018-08-02 Hongjian Wu Insulate gate hybrid mode transistor

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5410836B1 (en) * 1970-06-26 1979-05-10
JPS55102268A (en) * 1979-01-31 1980-08-05 Toshiba Corp Protecting circuit for semiconductor device
JPS57190359A (en) * 1981-05-19 1982-11-22 Toshiba Corp Protecting device for semiconductor
EP0072690A3 (en) * 1981-08-17 1983-11-09 Fujitsu Limited A mis device and a method of manufacturing it
JP2572210B2 (en) * 1984-11-20 1997-01-16 三菱電機株式会社 Vertical power MOS field effect semiconductor device
EP0222326A2 (en) * 1985-11-12 1987-05-20 General Electric Company Method of fabricating an improved insulated gate semiconductor device
US4803533A (en) * 1986-09-30 1989-02-07 General Electric Company IGT and MOSFET devices having reduced channel width
JP2724146B2 (en) * 1987-05-29 1998-03-09 日産自動車株式会社 Vertical MOSFET
IT1227104B (en) * 1988-09-27 1991-03-15 Sgs Thomson Microelectronics SELF-PROTECTED INTEGRATED CIRCUIT FROM POLARITY INVERSIONS OF THE POWER BATTERY
US5119162A (en) * 1989-02-10 1992-06-02 Texas Instruments Incorporated Integrated power DMOS circuit with protection diode
JPH061802B2 (en) * 1989-03-14 1994-01-05 株式会社東芝 Semiconductor device
FR2649828B1 (en) * 1989-07-17 1991-10-31 Sgs Thomson Microelectronics VDMOS / LOGIC INTEGRATED CIRCUIT COMPRISING A DEPLETED VERTICAL TRANSISTOR AND A ZENER DIODE
JPH0365027A (en) * 1989-07-31 1991-03-20 Matsushita Electric Ind Co Ltd Battery charger provided with discharger
JPH0756377B2 (en) * 1989-08-09 1995-06-14 中部電力株式会社 Method and apparatus for treating boiler exhaust gas
EP0416805B1 (en) * 1989-08-30 1996-11-20 Siliconix, Inc. Transistor with voltage clamp
JPH0750791B2 (en) * 1989-09-20 1995-05-31 株式会社日立製作所 Semiconductor rectifier diode, power supply device using the same, and electronic computer
FR2652449A1 (en) * 1989-09-22 1991-03-29 Sgs Thomson Microelectronics Electrostatic protection device for a pin of an integrated circuit
JP2943385B2 (en) * 1991-05-07 1999-08-30 富士電機株式会社 Semiconductor device having conductivity modulation type MOSFET
FR2698486B1 (en) * 1992-11-24 1995-03-10 Sgs Thomson Microelectronics Direct overvoltage protection structure for vertical semiconductor component.

Also Published As

Publication number Publication date
EP0621637A1 (en) 1994-10-26
JPH06310726A (en) 1994-11-04
EP0621637B1 (en) 2000-07-19
DE69425295D1 (en) 2000-08-24
US5561313A (en) 1996-10-01
JP3216743B2 (en) 2001-10-09

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee