DE69416906D1 - Verfahren zur Herstellung eines Materials aus Metalloxydgemischen - Google Patents

Verfahren zur Herstellung eines Materials aus Metalloxydgemischen

Info

Publication number
DE69416906D1
DE69416906D1 DE69416906T DE69416906T DE69416906D1 DE 69416906 D1 DE69416906 D1 DE 69416906D1 DE 69416906 T DE69416906 T DE 69416906T DE 69416906 T DE69416906 T DE 69416906T DE 69416906 D1 DE69416906 D1 DE 69416906D1
Authority
DE
Germany
Prior art keywords
producing
metal oxide
oxide mixtures
mixtures
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69416906T
Other languages
English (en)
Other versions
DE69416906T2 (de
Inventor
Yasuji Yamada
Masaru Nakamura
Noriyuki Tatsumi
Jiro Tsujino
Kanshi Ohtsu
Yasuo Kanamori
Minoru Tagami
Atsushi Kume
Yuh Shiohara
Shoji Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikura Ltd
Kansai Electric Power Co Inc
Kyushu Electric Power Co Inc
International Superconductivity Technology Center
Hitachi Cable Ltd
New Energy and Industrial Technology Development Organization
Original Assignee
Fujikura Ltd
Hokkaido Electric Power Co Inc
Kansai Electric Power Co Inc
Kyushu Electric Power Co Inc
International Superconductivity Technology Center
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd, Hokkaido Electric Power Co Inc, Kansai Electric Power Co Inc, Kyushu Electric Power Co Inc, International Superconductivity Technology Center, Hitachi Cable Ltd filed Critical Fujikura Ltd
Publication of DE69416906D1 publication Critical patent/DE69416906D1/de
Application granted granted Critical
Publication of DE69416906T2 publication Critical patent/DE69416906T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
    • C04B35/4504—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing rare earth oxides
    • C04B35/4508—Type 1-2-3
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/93—Electric superconducting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/704—Wire, fiber, or cable
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/729—Growing single crystal, e.g. epitaxy, bulk
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/733—Rapid solidification, e.g. quenching, gas-atomizing, melt-spinning, roller-quenching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
DE69416906T 1993-07-27 1994-07-27 Verfahren zur Herstellung eines Materials aus Metalloxydgemischen Expired - Fee Related DE69416906T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5184712A JP3008970B2 (ja) 1993-07-27 1993-07-27 Ｙ１２３型結晶構造を有する酸化物結晶膜

Publications (2)

Publication Number Publication Date
DE69416906D1 true DE69416906D1 (de) 1999-04-15
DE69416906T2 DE69416906T2 (de) 1999-08-26

Family

ID=16158050

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69416906T Expired - Fee Related DE69416906T2 (de) 1993-07-27 1994-07-27 Verfahren zur Herstellung eines Materials aus Metalloxydgemischen

Country Status (4)

Country Link
US (2) US5627142A (de)
EP (1) EP0636714B1 (de)
JP (1) JP3008970B2 (de)
DE (1) DE69416906T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5891828A (en) * 1996-10-14 1999-04-06 Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry Method of producing superconducting PrBa2 Cu3 Oy single crystal and PrBa2 Cu3 Oy superconducting device
US6163713A (en) * 1997-03-07 2000-12-19 Nec Corporation High frequency transmission line capable of improving an intermodulation distortion characteristic in a high frequency device
JPH10256812A (ja) * 1997-03-07 1998-09-25 Nec Corp 高周波伝送路及び高周波デバイス
GB9716571D0 (en) * 1997-08-05 1997-10-08 Cambridge Advanced Materials Liquid phase epitaxy
US6221812B1 (en) * 1998-07-20 2001-04-24 Board Of Regents, The University Of Texas System Jc in high magnetic field of bi-layer and multi-layer structures for high temperature superconductive materials
EP1126971A2 (de) * 1998-09-14 2001-08-29 The Regents of The University of California Supraleiterstruktur aus gemischtensettenerd-, barium-, und kupferverbindungen
WO2000063926A1 (fr) * 1999-04-15 2000-10-26 Fujikura Ltd. Supraconducteur a oxyde, procede de fabrication correspondant et materiau de base pour supraconducteur a oxyde
US6613463B1 (en) * 1999-09-06 2003-09-02 International Superconductivity Technology Center Superconducting laminated oxide substrate and superconducting integrated circuit
US6541079B1 (en) * 1999-10-25 2003-04-01 International Business Machines Corporation Engineered high dielectric constant oxide and oxynitride heterostructure gate dielectrics by an atomic beam deposition technique
US7160820B2 (en) * 2001-05-15 2007-01-09 International Superconductivity Technology Center, The Juridical Foundation Method of preparing oxide crystal film/substrate composite and solution for use therein
US6830776B1 (en) 2002-02-08 2004-12-14 The United States Of America As Represented By The Secretary Of The Air Force Method of manufacturing a high temperature superconductor
JP2012096938A (ja) * 2010-10-29 2012-05-24 Railway Technical Research Institute 超電導体製造用種結晶および種結晶を用いた超電導体の製造方法
CA2868986C (en) * 2011-03-30 2021-07-27 Ambature Inc. Electrical, mechanical, computing, and/or other devices formed of extremely low resistance materials
CN103060914B (zh) * 2012-12-04 2016-01-13 上海交通大学 阶梯型加速缓冷快速生长rebco高温超导块体的方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3726016A1 (de) * 1987-08-05 1989-02-16 Siemens Ag Verfahren zur herstellung eines schichtartigen aufbaus aus einem oxidkeramischen supralteitermaterial
KR910007382B1 (ko) * 1987-08-07 1991-09-25 가부시기가이샤 히다찌세이사꾸쇼 초전도 재료 및 초전도 박막의 제조방법
KR910007384B1 (ko) * 1987-09-16 1991-09-25 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 초전도 산화물 형성방법 및 장치
IT1217585B (it) * 1988-05-13 1990-03-30 Enichem Spa Film sottili superconduttori ad elevata densita' di corrente e loro metodo di preparazione
US5200389A (en) * 1989-03-13 1993-04-06 The Tokai University Juridicial Foundation Method for manufacturing an oxide superconducting article
US5236892A (en) * 1989-05-29 1993-08-17 Nkk Corporation Method for manufacturing oxide superconducting article
JPH02311391A (ja) * 1989-05-29 1990-12-26 Nkk Corp 超電導物品の製造方法
US5055445A (en) * 1989-09-25 1991-10-08 Litton Systems, Inc. Method of forming oxidic high Tc superconducting materials on substantially lattice matched monocrystalline substrates utilizing liquid phase epitaxy
CA2037795C (en) * 1990-03-09 1998-10-06 Saburo Tanaka Process for preparing high-temperature superconducting thin films
US5206213A (en) * 1990-03-23 1993-04-27 International Business Machines Corp. Method of preparing oriented, polycrystalline superconducting ceramic oxides
US5358927A (en) * 1990-05-31 1994-10-25 Bell Communications Research, Inc. Growth of a,b-axis oriented pervoskite thin films
JP2740427B2 (ja) * 1992-05-25 1998-04-15 財団法人国際超電導産業技術研究センター 酸化物結晶の作製方法
US5314869A (en) * 1992-09-16 1994-05-24 The Texas A & M University System Method for forming single phase, single crystalline 2122 BCSCO superconductor thin films by liquid phase epitaxy
JPH06321695A (ja) * 1993-05-10 1994-11-22 Kokusai Chodendo Sangyo Gijutsu Kenkyu Center Ｙ１２３型結晶構造を有する酸化物結晶膜及び膜積層体

Also Published As

Publication number Publication date
US5627142A (en) 1997-05-06
JP3008970B2 (ja) 2000-02-14
EP0636714A1 (de) 1995-02-01
DE69416906T2 (de) 1999-08-26
EP0636714B1 (de) 1999-03-10
JPH0733590A (ja) 1995-02-03
US5998050A (en) 1999-12-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER,

Owner name: HITACHI CABLE, LTD., TOKIO/TOKYO, JP

Owner name: KYUSHU ELECTRIC POWER CO., INC., FUKUOKA, JP

Owner name: THE KANSAI ELECTRIC POWER CO., INC., OSAKA, JP

Owner name: FUJIKURA LTD., TOKIO/TOKYO, JP

8327 Change in the person/name/address of the patent owner

Owner name: NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT O

Owner name: FUJIKURA LTD., TOKIO/TOKYO, JP

Owner name: THE KANSAI ELECTRIC POWER CO., INC., OSAKA, JP

Owner name: KYUSHU ELECTRIC POWER CO., INC., FUKUOKA, JP

Owner name: HITACHI CABLE, LTD., TOKIO/TOKYO, JP

Owner name: INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER,

8339 Ceased/non-payment of the annual fee