DE69415457T2 - Tertiärbutylesterderivate der 4,4-bis (4'Hydroxyphenyl)pentansäure und diese enthaltende positive Photoresiste - Google Patents

Tertiärbutylesterderivate der 4,4-bis (4'Hydroxyphenyl)pentansäure und diese enthaltende positive Photoresiste

Info

Publication number
DE69415457T2
DE69415457T2 DE69415457T DE69415457T DE69415457T2 DE 69415457 T2 DE69415457 T2 DE 69415457T2 DE 69415457 T DE69415457 T DE 69415457T DE 69415457 T DE69415457 T DE 69415457T DE 69415457 T2 DE69415457 T2 DE 69415457T2
Authority
DE
Germany
Prior art keywords
hydroxyphenyl
bis
butyl ester
tertiary butyl
pentanoic acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69415457T
Other languages
English (en)
Other versions
DE69415457D1 (de
Inventor
Fujio Yagihashi
Jun Watanabe
Minoru Takamizawa
Akinobu Tanaka
Yoshio Kawai
Tadahito Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Shin Etsu Chemical Co Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5244004A external-priority patent/JP2828572B2/ja
Application filed by Shin Etsu Chemical Co Ltd, Nippon Telegraph and Telephone Corp filed Critical Shin Etsu Chemical Co Ltd
Application granted granted Critical
Publication of DE69415457D1 publication Critical patent/DE69415457D1/de
Publication of DE69415457T2 publication Critical patent/DE69415457T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/66—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety
    • C07C69/73—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of unsaturated acids
    • C07C69/734—Ethers
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D309/00—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only ring hetero atom, not condensed with other rings
    • C07D309/02—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only ring hetero atom, not condensed with other rings having no double bonds between ring members or between ring members and non-ring members
    • C07D309/08—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only ring hetero atom, not condensed with other rings having no double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D309/10—Oxygen atoms
    • C07D309/12—Oxygen atoms only hydrogen atoms and one oxygen atom directly attached to ring carbon atoms, e.g. tetrahydropyranyl ethers
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804—Compounds having Si-O-C linkages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/55—Design of synthesis routes, e.g. reducing the use of auxiliary or protecting groups

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
DE69415457T 1993-09-03 1994-08-31 Tertiärbutylesterderivate der 4,4-bis (4'Hydroxyphenyl)pentansäure und diese enthaltende positive Photoresiste Expired - Lifetime DE69415457T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5244004A JP2828572B2 (ja) 1993-02-08 1993-09-03 ジフェノール酸第三級ブチルエステル誘導体及びそれを含有するポジ型レジスト材料

Publications (2)

Publication Number Publication Date
DE69415457D1 DE69415457D1 (de) 1999-02-04
DE69415457T2 true DE69415457T2 (de) 1999-07-15

Family

ID=17112287

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69415457T Expired - Lifetime DE69415457T2 (de) 1993-09-03 1994-08-31 Tertiärbutylesterderivate der 4,4-bis (4'Hydroxyphenyl)pentansäure und diese enthaltende positive Photoresiste

Country Status (4)

Country Link
US (1) US6667415B1 (de)
EP (1) EP0646568B1 (de)
KR (1) KR100286621B1 (de)
DE (1) DE69415457T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2153447T3 (es) * 1994-07-23 2001-03-01 Nestle Sa Composicion antioxidante y procedimiento para su preparacion.
JP3944669B2 (ja) * 1999-05-19 2007-07-11 信越化学工業株式会社 エステル化合物
JP3642228B2 (ja) 1999-05-19 2005-04-27 信越化学工業株式会社 レジスト材料及びパターン形成方法
US6638684B2 (en) 1999-08-31 2003-10-28 Tokyo Ohka Kogyo Co., Ltd. Photosensitive laminate, process for forming resist pattern using same and positive resist composition
TWI300516B (de) * 2001-07-24 2008-09-01 Jsr Corp
KR20030034292A (ko) * 2001-10-18 2003-05-09 주식회사 한국케믹스 화학증폭형 포지티브 레지스트 조성물
TWI316645B (en) * 2003-09-18 2009-11-01 Tokyo Ohka Kogyo Co Ltd Positive resist composition and resist pattern formation method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH621416A5 (de) 1975-03-27 1981-01-30 Hoechst Ag
DE4015540A1 (de) * 1990-05-15 1991-11-21 Bayer Ag Mischungen von polyamiden mit aromatischen (co)poly(ester)-(carbonaten) auf basis tert.-alkylestergruppen enthaltender bisphenole
DE4015541A1 (de) * 1990-05-15 1991-11-21 Bayer Ag Tert.-alkylester-bisphenole, verfahren zu ihrer herstellung und ihre verwendung

Also Published As

Publication number Publication date
EP0646568B1 (de) 1998-12-23
KR100286621B1 (ko) 2001-04-16
EP0646568A2 (de) 1995-04-05
EP0646568A3 (de) 1995-05-24
DE69415457D1 (de) 1999-02-04
US6667415B1 (en) 2003-12-23
KR950008466A (ko) 1995-04-17

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