DE69404415T2 - Verfahren zur Ablagerung von anhaftenden Wolframsilicid-Filmen - Google Patents

Verfahren zur Ablagerung von anhaftenden Wolframsilicid-Filmen

Info

Publication number
DE69404415T2
DE69404415T2 DE69404415T DE69404415T DE69404415T2 DE 69404415 T2 DE69404415 T2 DE 69404415T2 DE 69404415 T DE69404415 T DE 69404415T DE 69404415 T DE69404415 T DE 69404415T DE 69404415 T2 DE69404415 T2 DE 69404415T2
Authority
DE
Germany
Prior art keywords
deposition
tungsten silicide
silicide films
adhering
adhering tungsten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69404415T
Other languages
English (en)
Other versions
DE69404415D1 (de
Inventor
Mei Chang
Susan Telford
Meng Chu Tseng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22473231&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69404415(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69404415D1 publication Critical patent/DE69404415D1/de
Publication of DE69404415T2 publication Critical patent/DE69404415T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69404415T 1993-10-14 1994-09-13 Verfahren zur Ablagerung von anhaftenden Wolframsilicid-Filmen Expired - Fee Related DE69404415T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13652993A 1993-10-14 1993-10-14

Publications (2)

Publication Number Publication Date
DE69404415D1 DE69404415D1 (de) 1997-09-04
DE69404415T2 true DE69404415T2 (de) 1997-12-04

Family

ID=22473231

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69404415T Expired - Fee Related DE69404415T2 (de) 1993-10-14 1994-09-13 Verfahren zur Ablagerung von anhaftenden Wolframsilicid-Filmen

Country Status (4)

Country Link
EP (1) EP0648859B1 (de)
JP (1) JPH07172810A (de)
KR (1) KR100214906B1 (de)
DE (1) DE69404415T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100269315B1 (ko) * 1997-11-24 2000-11-01 윤종용 램프가열방식의매엽식장비를이용한반도체장치의제조방법
KR100669141B1 (ko) 2005-01-17 2007-01-15 삼성전자주식회사 오믹막 및 이의 형성 방법, 오믹막을 포함하는 반도체장치 및 이의 제조 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2620736B1 (fr) * 1987-09-17 1990-01-19 France Etat Procede de depot de siliciures de tungstene ou de molybdene
GB2222416B (en) * 1988-08-31 1993-03-03 Watkins Johnson Co Processes using disilane
JP3163687B2 (ja) * 1991-11-12 2001-05-08 富士通株式会社 化学気相成長装置及び化学気相成長膜形成方法

Also Published As

Publication number Publication date
EP0648859A1 (de) 1995-04-19
JPH07172810A (ja) 1995-07-11
DE69404415D1 (de) 1997-09-04
KR100214906B1 (ko) 1999-08-02
EP0648859B1 (de) 1997-07-23
KR950012636A (ko) 1995-05-16

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8339 Ceased/non-payment of the annual fee