DE69401699D1 - Halbleiterlaser, der mit Hilfe eines nichtlinearen Kristalls innerhalb des Laserresonators Licht der zweiten Harmonischen erzeugt - Google Patents
Halbleiterlaser, der mit Hilfe eines nichtlinearen Kristalls innerhalb des Laserresonators Licht der zweiten Harmonischen erzeugtInfo
- Publication number
- DE69401699D1 DE69401699D1 DE69401699T DE69401699T DE69401699D1 DE 69401699 D1 DE69401699 D1 DE 69401699D1 DE 69401699 T DE69401699 T DE 69401699T DE 69401699 T DE69401699 T DE 69401699T DE 69401699 D1 DE69401699 D1 DE 69401699D1
- Authority
- DE
- Germany
- Prior art keywords
- generate
- laser
- nonlinear crystal
- harmonic light
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0215—Bonding to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0604—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising a non-linear region, e.g. generating harmonics of the laser frequency
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/156,216 US5363390A (en) | 1993-11-22 | 1993-11-22 | Semiconductor laser that generates second harmonic light by means of a nonlinear crystal in the laser cavity |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69401699D1 true DE69401699D1 (de) | 1997-03-20 |
DE69401699T2 DE69401699T2 (de) | 1997-06-05 |
Family
ID=22558612
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69401699T Expired - Fee Related DE69401699T2 (de) | 1993-11-22 | 1994-11-21 | Halbleiterlaser, der mit Hilfe eines nichtlinearen Kristalls innerhalb des Laserresonators Licht der zweiten Harmonischen erzeugt |
Country Status (4)
Country | Link |
---|---|
US (1) | US5363390A (de) |
EP (1) | EP0654873B1 (de) |
JP (1) | JPH07226567A (de) |
DE (1) | DE69401699T2 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996010855A1 (en) * | 1994-10-03 | 1996-04-11 | Sdl, Inc. | Tunable blue laser diode |
US5804834A (en) * | 1994-10-28 | 1998-09-08 | Mitsubishi Chemical Corporation | Semiconductor device having contact resistance reducing layer |
US5513204A (en) * | 1995-04-12 | 1996-04-30 | Optical Concepts, Inc. | Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump |
US6021141A (en) * | 1996-03-29 | 2000-02-01 | Sdl, Inc. | Tunable blue laser diode |
US5724375A (en) * | 1996-07-17 | 1998-03-03 | W. L. Gore & Associates, Inc. | Vertical cavity surface emitting laser with enhanced second harmonic generation and method of making same |
US5818601A (en) * | 1996-10-04 | 1998-10-06 | The United States Of America As Represented By The Secretary Of The Navy | Wavelength independent optical probe |
US5923696A (en) * | 1996-12-27 | 1999-07-13 | Motorola, Inc. | Visible light emitting vertical cavity surface emitting laser with gallium phosphide contact layer and method of fabrication |
US5993981A (en) * | 1997-04-18 | 1999-11-30 | Raytheon Company | Broadband protective optical window coating |
WO1999005728A1 (en) | 1997-07-25 | 1999-02-04 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
JP3770014B2 (ja) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | 窒化物半導体素子 |
ATE452445T1 (de) | 1999-03-04 | 2010-01-15 | Nichia Corp | Nitridhalbleiterlaserelement |
US6252896B1 (en) * | 1999-03-05 | 2001-06-26 | Agilent Technologies, Inc. | Long-Wavelength VCSEL using buried bragg reflectors |
JP2000261101A (ja) | 1999-03-09 | 2000-09-22 | Fuji Photo Film Co Ltd | 波長変換装置 |
US6393038B1 (en) | 1999-10-04 | 2002-05-21 | Sandia Corporation | Frequency-doubled vertical-external-cavity surface-emitting laser |
JPWO2002058060A1 (ja) * | 2001-01-18 | 2004-05-27 | 株式会社日立製作所 | 光情報記録媒体 |
US6693933B2 (en) | 2001-03-15 | 2004-02-17 | Honeywell International Inc. | Vertical cavity master oscillator power amplifier |
US6671304B2 (en) | 2001-08-28 | 2003-12-30 | The United States Of America As Represented By The Secretary Of The Navy | Amplitude-modulated laser for high-bandwidth communications systems |
JP4497796B2 (ja) * | 2002-07-01 | 2010-07-07 | 株式会社リコー | 面発光型半導体レーザおよび面発光型半導体レーザアレイおよび光通信システムおよび光書き込みシステムおよび光ピックアップシステム |
JP4874768B2 (ja) * | 2006-11-14 | 2012-02-15 | 株式会社リコー | 波長変換素子 |
US20110272727A1 (en) * | 2007-02-13 | 2011-11-10 | Epistar Corporation | Light-emitting diode and method for manufacturing the same |
TWI362769B (en) | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0514538Y2 (de) * | 1986-10-08 | 1993-04-19 | ||
JPS63280484A (ja) * | 1987-05-12 | 1988-11-17 | Matsushita Electric Ind Co Ltd | 半導体装置 |
US5070505A (en) * | 1990-04-30 | 1991-12-03 | Amoco Corporation | Self-doubling micro-laser |
JP3244529B2 (ja) * | 1992-04-16 | 2002-01-07 | アジレント・テクノロジーズ・インク | 面発光型第2高調波生成素子 |
US5317447A (en) * | 1992-04-24 | 1994-05-31 | Electro Scientific Industries, Inc. | High-power, compact, diode-pumped, tunable laser |
US5231642A (en) * | 1992-05-08 | 1993-07-27 | Spectra Diode Laboratories, Inc. | Semiconductor ring and folded cavity lasers |
US5249195A (en) * | 1992-06-30 | 1993-09-28 | At&T Bell Laboratories | Erbium doped optical devices |
-
1993
- 1993-11-22 US US08/156,216 patent/US5363390A/en not_active Expired - Lifetime
-
1994
- 1994-11-21 EP EP94308586A patent/EP0654873B1/de not_active Expired - Lifetime
- 1994-11-21 DE DE69401699T patent/DE69401699T2/de not_active Expired - Fee Related
- 1994-11-22 JP JP6288142A patent/JPH07226567A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US5363390A (en) | 1994-11-08 |
JPH07226567A (ja) | 1995-08-22 |
DE69401699T2 (de) | 1997-06-05 |
EP0654873B1 (de) | 1997-02-05 |
EP0654873A1 (de) | 1995-05-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |