DE69401699D1 - Halbleiterlaser, der mit Hilfe eines nichtlinearen Kristalls innerhalb des Laserresonators Licht der zweiten Harmonischen erzeugt - Google Patents

Halbleiterlaser, der mit Hilfe eines nichtlinearen Kristalls innerhalb des Laserresonators Licht der zweiten Harmonischen erzeugt

Info

Publication number
DE69401699D1
DE69401699D1 DE69401699T DE69401699T DE69401699D1 DE 69401699 D1 DE69401699 D1 DE 69401699D1 DE 69401699 T DE69401699 T DE 69401699T DE 69401699 T DE69401699 T DE 69401699T DE 69401699 D1 DE69401699 D1 DE 69401699D1
Authority
DE
Germany
Prior art keywords
generate
laser
nonlinear crystal
harmonic light
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69401699T
Other languages
English (en)
Other versions
DE69401699T2 (de
Inventor
Long Yang
Rajeev Ram
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Application granted granted Critical
Publication of DE69401699D1 publication Critical patent/DE69401699D1/de
Publication of DE69401699T2 publication Critical patent/DE69401699T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0604—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising a non-linear region, e.g. generating harmonics of the laser frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
DE69401699T 1993-11-22 1994-11-21 Halbleiterlaser, der mit Hilfe eines nichtlinearen Kristalls innerhalb des Laserresonators Licht der zweiten Harmonischen erzeugt Expired - Fee Related DE69401699T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/156,216 US5363390A (en) 1993-11-22 1993-11-22 Semiconductor laser that generates second harmonic light by means of a nonlinear crystal in the laser cavity

Publications (2)

Publication Number Publication Date
DE69401699D1 true DE69401699D1 (de) 1997-03-20
DE69401699T2 DE69401699T2 (de) 1997-06-05

Family

ID=22558612

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69401699T Expired - Fee Related DE69401699T2 (de) 1993-11-22 1994-11-21 Halbleiterlaser, der mit Hilfe eines nichtlinearen Kristalls innerhalb des Laserresonators Licht der zweiten Harmonischen erzeugt

Country Status (4)

Country Link
US (1) US5363390A (de)
EP (1) EP0654873B1 (de)
JP (1) JPH07226567A (de)
DE (1) DE69401699T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996010855A1 (en) * 1994-10-03 1996-04-11 Sdl, Inc. Tunable blue laser diode
US5804834A (en) * 1994-10-28 1998-09-08 Mitsubishi Chemical Corporation Semiconductor device having contact resistance reducing layer
US5513204A (en) * 1995-04-12 1996-04-30 Optical Concepts, Inc. Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump
US6021141A (en) * 1996-03-29 2000-02-01 Sdl, Inc. Tunable blue laser diode
US5724375A (en) * 1996-07-17 1998-03-03 W. L. Gore & Associates, Inc. Vertical cavity surface emitting laser with enhanced second harmonic generation and method of making same
US5818601A (en) * 1996-10-04 1998-10-06 The United States Of America As Represented By The Secretary Of The Navy Wavelength independent optical probe
US5923696A (en) * 1996-12-27 1999-07-13 Motorola, Inc. Visible light emitting vertical cavity surface emitting laser with gallium phosphide contact layer and method of fabrication
US5993981A (en) * 1997-04-18 1999-11-30 Raytheon Company Broadband protective optical window coating
WO1999005728A1 (en) 1997-07-25 1999-02-04 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
ATE452445T1 (de) 1999-03-04 2010-01-15 Nichia Corp Nitridhalbleiterlaserelement
US6252896B1 (en) * 1999-03-05 2001-06-26 Agilent Technologies, Inc. Long-Wavelength VCSEL using buried bragg reflectors
JP2000261101A (ja) 1999-03-09 2000-09-22 Fuji Photo Film Co Ltd 波長変換装置
US6393038B1 (en) 1999-10-04 2002-05-21 Sandia Corporation Frequency-doubled vertical-external-cavity surface-emitting laser
JPWO2002058060A1 (ja) * 2001-01-18 2004-05-27 株式会社日立製作所 光情報記録媒体
US6693933B2 (en) 2001-03-15 2004-02-17 Honeywell International Inc. Vertical cavity master oscillator power amplifier
US6671304B2 (en) 2001-08-28 2003-12-30 The United States Of America As Represented By The Secretary Of The Navy Amplitude-modulated laser for high-bandwidth communications systems
JP4497796B2 (ja) * 2002-07-01 2010-07-07 株式会社リコー 面発光型半導体レーザおよび面発光型半導体レーザアレイおよび光通信システムおよび光書き込みシステムおよび光ピックアップシステム
JP4874768B2 (ja) * 2006-11-14 2012-02-15 株式会社リコー 波長変換素子
US20110272727A1 (en) * 2007-02-13 2011-11-10 Epistar Corporation Light-emitting diode and method for manufacturing the same
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0514538Y2 (de) * 1986-10-08 1993-04-19
JPS63280484A (ja) * 1987-05-12 1988-11-17 Matsushita Electric Ind Co Ltd 半導体装置
US5070505A (en) * 1990-04-30 1991-12-03 Amoco Corporation Self-doubling micro-laser
JP3244529B2 (ja) * 1992-04-16 2002-01-07 アジレント・テクノロジーズ・インク 面発光型第２高調波生成素子
US5317447A (en) * 1992-04-24 1994-05-31 Electro Scientific Industries, Inc. High-power, compact, diode-pumped, tunable laser
US5231642A (en) * 1992-05-08 1993-07-27 Spectra Diode Laboratories, Inc. Semiconductor ring and folded cavity lasers
US5249195A (en) * 1992-06-30 1993-09-28 At&T Bell Laboratories Erbium doped optical devices

Also Published As

Publication number Publication date
US5363390A (en) 1994-11-08
JPH07226567A (ja) 1995-08-22
DE69401699T2 (de) 1997-06-05
EP0654873B1 (de) 1997-02-05
EP0654873A1 (de) 1995-05-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee