DE69331426D1 - Optischer Empfänger, optische Halbleitervorrichtung und dieselbigen verwendendes optisches Kommunikationssystem - Google Patents

Optischer Empfänger, optische Halbleitervorrichtung und dieselbigen verwendendes optisches Kommunikationssystem

Info

Publication number
DE69331426D1
DE69331426D1 DE69331426T DE69331426T DE69331426D1 DE 69331426 D1 DE69331426 D1 DE 69331426D1 DE 69331426 T DE69331426 T DE 69331426T DE 69331426 T DE69331426 T DE 69331426T DE 69331426 D1 DE69331426 D1 DE 69331426D1
Authority
DE
Germany
Prior art keywords
optical
communication system
same
semiconductor
receiver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69331426T
Other languages
English (en)
Other versions
DE69331426T2 (de
Inventor
Takeo Ono
Maseo Majima
Toshihiko Ouchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69331426D1 publication Critical patent/DE69331426D1/de
Publication of DE69331426T2 publication Critical patent/DE69331426T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/25—Arrangements specific to fibre transmission
    • H04B10/2507—Arrangements specific to fibre transmission for the reduction or elimination of distortion or dispersion
    • H04B10/2572—Arrangements specific to fibre transmission for the reduction or elimination of distortion or dispersion due to forms of polarisation-dependent distortion other than PMD
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/126—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29304—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by diffraction, e.g. grating
    • G02B6/29316—Light guides comprising a diffractive element, e.g. grating in or on the light guide such that diffracted light is confined in the light guide
    • G02B6/29317—Light guides of the optical fibre type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/14—Semiconductor lasers with special structural design for lasing in a specific polarisation mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1057—Comprising an active region having a varying composition or cross-section in a specific direction varying composition along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/106—Comprising an active region having a varying composition or cross-section in a specific direction varying thickness along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5036—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-selective
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5045—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement having a frequency filtering function
DE69331426T 1992-10-03 1993-10-01 Optischer Empfänger, optische Halbleitervorrichtung und dieselbigen verwendendes optisches Kommunikationssystem Expired - Fee Related DE69331426T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4289551A JPH06120906A (ja) 1992-10-03 1992-10-03 光レシーバ、光半導体装置及びそれを用いた光通信方式及び光通信システム

Publications (2)

Publication Number Publication Date
DE69331426D1 true DE69331426D1 (de) 2002-02-14
DE69331426T2 DE69331426T2 (de) 2002-06-20

Family

ID=17744708

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69331426T Expired - Fee Related DE69331426T2 (de) 1992-10-03 1993-10-01 Optischer Empfänger, optische Halbleitervorrichtung und dieselbigen verwendendes optisches Kommunikationssystem

Country Status (4)

Country Link
US (1) US5479544A (de)
EP (1) EP0591863B1 (de)
JP (1) JPH06120906A (de)
DE (1) DE69331426T2 (de)

Families Citing this family (15)

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Publication number Priority date Publication date Assignee Title
JP3226067B2 (ja) * 1992-10-03 2001-11-05 キヤノン株式会社 光通信方法及び光通信システム
US5457760A (en) * 1994-05-06 1995-10-10 At&T Ipm Corp. Wavelength division optical multiplexing elements
US5659560A (en) * 1994-05-12 1997-08-19 Canon Kabushiki Kaisha Apparatus and method for driving oscillation polarization selective light source, and optical communication system using the same
EP0735635B1 (de) * 1995-03-31 2000-08-02 Canon Kabushiki Kaisha Optischer Halbleitervorrichtung, Antriebsverfahren und optisches Kommunikationssystem
US6275317B1 (en) * 1998-03-10 2001-08-14 Agere Systems Optoelectronics Guardian Corp. Hybrid integration of a wavelength selectable laser source and optical amplifier/modulator
US6466349B1 (en) * 1998-05-14 2002-10-15 Hughes Electronics Corporation Integrated optical transmitter
JP2001042150A (ja) 1999-07-30 2001-02-16 Canon Inc 光導波路、その作製方法、およびこれを用いた光インタコネクション装置
US7167615B1 (en) 1999-11-05 2007-01-23 Board Of Regents, The University Of Texas System Resonant waveguide-grating filters and sensors and methods for making and using same
JP3339488B2 (ja) 2000-02-25 2002-10-28 日本電気株式会社 光半導体装置およびその製造方法
JP2002261377A (ja) * 2001-02-27 2002-09-13 Hitachi Ltd 光モジュール
US6661952B2 (en) * 2001-05-04 2003-12-09 Ut Battelle, Llc Sub-wavelength efficient polarization filter (SWEP filter)
US7606499B2 (en) * 2005-08-01 2009-10-20 Massachusetts Institute Of Technology Bidirectional transceiver assembly for POF application
EP2146410A1 (de) * 2008-07-18 2010-01-20 Alcatel, Lucent Verfahren und Photonenvorrichtung zur Eliminierung oder wesentlichen Reduzierung der Polarisationsempfindlichkeit eines injizierten optischen Signals und Herstellungsverfahren für solch eine Photonenvorrichtung
KR20120070836A (ko) * 2010-12-22 2012-07-02 한국전자통신연구원 다파장 광 발생 장치
WO2016134323A1 (en) * 2015-02-19 2016-08-25 Coriant Advanced Technology, LLC Integrated polarization splitter and rotator

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US4146297A (en) * 1978-01-16 1979-03-27 Bell Telephone Laboratories, Incorporated Tunable optical waveguide directional coupler filter
US4323428A (en) * 1979-11-07 1982-04-06 Westinghouse Electric Corp. Reconstitutable fuel assembly for a nuclear reactor
JPS58137808A (ja) * 1982-02-10 1983-08-16 Nec Corp 光回路
EP0238964B1 (de) * 1986-03-24 1993-01-07 Siemens Aktiengesellschaft Kantenfilter für die integrierte Optik
US4723795A (en) * 1986-05-05 1988-02-09 Combustion Engineering, Inc. Instrument penetration for high pressure vessels
FR2635423B1 (fr) * 1988-08-11 1993-11-26 Etat Francais Cnet Procede et dispositif de filtrage optique et de photodetection de signaux optiques modules en intensite
EP0360664B1 (de) * 1988-09-19 1994-06-01 Framatome Zerlegbare Befestigungsvorrichtung eines Führungsrohres in einem Brennstabbündelendstück eines Kernreaktors
DE69023028T2 (de) * 1989-03-23 1996-05-30 At & T Corp Bauelement für die adiabatische Veränderung der Polarisation.
US5031993A (en) * 1989-11-16 1991-07-16 International Business Machines Corporation Detecting polarization state of an optical wavefront
US5073004A (en) * 1990-05-18 1991-12-17 At&T Bell Laboratories Tunable optical filter
US5048909A (en) * 1990-07-27 1991-09-17 At&T Bell Laboratories Adiabatic reflection apparatus
JPH04138427A (ja) * 1990-09-28 1992-05-12 Oki Electric Ind Co Ltd 光波長フィルタ装置
JP2579394B2 (ja) * 1991-09-13 1997-02-05 日本電信電話株式会社 波長多重型モード同期レーザ装置
US5363226A (en) * 1992-04-06 1994-11-08 Eastman Kodak Company Apparatus and method for dispersion compensation for a grating coupler using a surface relief reflection grating
US5339157A (en) * 1993-02-19 1994-08-16 At&T Bell Laboratories Rapidly tunable integrated optical filter
US5355237A (en) * 1993-03-17 1994-10-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Wavelength-division multiplexed optical integrated circuit with vertical diffraction grating

Also Published As

Publication number Publication date
DE69331426T2 (de) 2002-06-20
JPH06120906A (ja) 1994-04-28
US5479544A (en) 1995-12-26
EP0591863B1 (de) 2002-01-09
EP0591863A1 (de) 1994-04-13

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