DE69328392T2 - GaAs-Passivierung mittels stromabwärts erzeugtem Ammoniak-Plasma - Google Patents

GaAs-Passivierung mittels stromabwärts erzeugtem Ammoniak-Plasma

Info

Publication number
DE69328392T2
DE69328392T2 DE69328392T DE69328392T DE69328392T2 DE 69328392 T2 DE69328392 T2 DE 69328392T2 DE 69328392 T DE69328392 T DE 69328392T DE 69328392 T DE69328392 T DE 69328392T DE 69328392 T2 DE69328392 T2 DE 69328392T2
Authority
DE
Germany
Prior art keywords
ammonia plasma
downstream ammonia
gaas
passivation
gaas passivation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69328392T
Other languages
English (en)
Other versions
DE69328392D1 (de
Inventor
Eray Sacit Aydil
Konstantinos Petros Giapis
Richard Alan Gottscho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69328392D1 publication Critical patent/DE69328392D1/de
Publication of DE69328392T2 publication Critical patent/DE69328392T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
    • H01L21/3006—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
DE69328392T 1992-06-16 1993-06-10 GaAs-Passivierung mittels stromabwärts erzeugtem Ammoniak-Plasma Expired - Fee Related DE69328392T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US89955792A 1992-06-16 1992-06-16

Publications (2)

Publication Number Publication Date
DE69328392D1 DE69328392D1 (de) 2000-05-25
DE69328392T2 true DE69328392T2 (de) 2000-12-07

Family

ID=25411210

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69328392T Expired - Fee Related DE69328392T2 (de) 1992-06-16 1993-06-10 GaAs-Passivierung mittels stromabwärts erzeugtem Ammoniak-Plasma

Country Status (5)

Country Link
US (1) US5464664A (de)
EP (1) EP0575098B1 (de)
JP (1) JP3569299B2 (de)
KR (1) KR100262022B1 (de)
DE (1) DE69328392T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2332563A (en) * 1997-12-18 1999-06-23 Sharp Kk Growth of group III nitride or group III-V nitride layers
US6025281A (en) * 1997-12-18 2000-02-15 Motorola, Inc. Passivation of oxide-compound semiconductor interfaces
ES2276199T3 (es) * 2000-10-20 2007-06-16 Seiko Epson Corporation Un dispositivo de registro de inyeccion de tinta y cartucho de tinta.
US7338826B2 (en) * 2005-12-09 2008-03-04 The United States Of America As Represented By The Secretary Of The Navy Silicon nitride passivation with ammonia plasma pretreatment for improving reliability of AlGaN/GaN HEMTs
US9196497B2 (en) * 2010-06-08 2015-11-24 Amethyst Research, Inc. Photolytic processing of materials with hydrogen
RU2544313C2 (ru) * 2013-05-07 2015-03-20 Федеральное государственное бюджетное орбразовательное учреждение высшего профессионального образования "Национальный исследовательский Томский политехнический университет" Способ определения оптимальной температуры пассивации трубных элементов теплоэнергетического оборудования и устройство для коррозионных испытаний

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4328258A (en) * 1977-12-05 1982-05-04 Plasma Physics Corp. Method of forming semiconducting materials and barriers
US4448633A (en) * 1982-11-29 1984-05-15 United Technologies Corporation Passivation of III-V semiconductor surfaces by plasma nitridation
US4705760A (en) * 1986-01-16 1987-11-10 Rca Corporation Preparation of a surface for deposition of a passinating layer
US4859253A (en) * 1988-07-20 1989-08-22 International Business Machines Corporation Method for passivating a compound semiconductor surface and device having improved semiconductor-insulator interface
DE69019334T2 (de) * 1990-02-07 1996-01-25 At & T Corp GaAs-Passivierung mittels Wasserstoffplasma.
US5179029A (en) * 1990-02-07 1993-01-12 At&T Bell Laboratories Hydrogen plasma passivation of GaAs

Also Published As

Publication number Publication date
KR100262022B1 (ko) 2000-08-01
EP0575098B1 (de) 2000-04-19
EP0575098A1 (de) 1993-12-22
KR940001296A (ko) 1994-01-11
JP3569299B2 (ja) 2004-09-22
JPH06244169A (ja) 1994-09-02
DE69328392D1 (de) 2000-05-25
US5464664A (en) 1995-11-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee