DE69019334D1 - GaAs-Passivierung mittels Wasserstoffplasma. - Google Patents

GaAs-Passivierung mittels Wasserstoffplasma.

Info

Publication number
DE69019334D1
DE69019334D1 DE69019334T DE69019334T DE69019334D1 DE 69019334 D1 DE69019334 D1 DE 69019334D1 DE 69019334 T DE69019334 T DE 69019334T DE 69019334 T DE69019334 T DE 69019334T DE 69019334 D1 DE69019334 D1 DE 69019334D1
Authority
DE
Germany
Prior art keywords
hydrogen plasma
gaas
passivation
gaas passivation
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69019334T
Other languages
English (en)
Other versions
DE69019334T2 (de
Inventor
Richard Alan Gottscho
Bryan L Preppernau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69019334D1 publication Critical patent/DE69019334D1/de
Publication of DE69019334T2 publication Critical patent/DE69019334T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
    • H01L21/3006—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE1990619334 1990-02-07 1990-08-24 GaAs-Passivierung mittels Wasserstoffplasma. Expired - Fee Related DE69019334T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US47701290A 1990-02-07 1990-02-07

Publications (2)

Publication Number Publication Date
DE69019334D1 true DE69019334D1 (de) 1995-06-14
DE69019334T2 DE69019334T2 (de) 1996-01-25

Family

ID=23894147

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1990619334 Expired - Fee Related DE69019334T2 (de) 1990-02-07 1990-08-24 GaAs-Passivierung mittels Wasserstoffplasma.

Country Status (3)

Country Link
EP (1) EP0441024B1 (de)
JP (1) JP2902460B2 (de)
DE (1) DE69019334T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2830666B2 (ja) * 1991-11-29 1998-12-02 日本電気株式会社 半導体に発光層を作製する方法
EP0575098B1 (de) * 1992-06-16 2000-04-19 AT&T Corp. GaAs-Passivierung mittels stromabwärts erzeugtem Ammoniak-Plasma
US6385596B1 (en) * 1998-02-06 2002-05-07 Liquid Audio, Inc. Secure online music distribution system
US8524562B2 (en) * 2008-09-16 2013-09-03 Imec Method for reducing Fermi-Level-Pinning in a non-silicon channel MOS device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01290230A (ja) * 1988-05-18 1989-11-22 Fujitsu Ltd アニール方法

Also Published As

Publication number Publication date
EP0441024B1 (de) 1995-05-10
JPH0410623A (ja) 1992-01-14
DE69019334T2 (de) 1996-01-25
EP0441024A3 (en) 1992-04-08
JP2902460B2 (ja) 1999-06-07
EP0441024A2 (de) 1991-08-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee