DE69325763T2 - Elektroakustische Hybride integrierte Schaltung und Methode zu deren Herstellung - Google Patents

Elektroakustische Hybride integrierte Schaltung und Methode zu deren Herstellung

Info

Publication number
DE69325763T2
DE69325763T2 DE69325763T DE69325763T DE69325763T2 DE 69325763 T2 DE69325763 T2 DE 69325763T2 DE 69325763 T DE69325763 T DE 69325763T DE 69325763 T DE69325763 T DE 69325763T DE 69325763 T2 DE69325763 T2 DE 69325763T2
Authority
DE
Germany
Prior art keywords
electroacoustic
production
integrated circuit
hybrid integrated
hybrid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69325763T
Other languages
English (en)
Other versions
DE69325763D1 (de
Inventor
Kazuo Eda
Yutaka Taguchi
Akihiro Kanaboshi
Tetsuyoshi Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP26615892A external-priority patent/JP2589634B2/ja
Priority claimed from JP27400292A external-priority patent/JP2563733B2/ja
Priority claimed from JP27400392A external-priority patent/JP2574612B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69325763D1 publication Critical patent/DE69325763D1/de
Publication of DE69325763T2 publication Critical patent/DE69325763T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174Membranes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02086Means for compensation or elimination of undesirable effects
    • H03H9/02102Means for compensation or elimination of undesirable effects of temperature influence
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders; Supports
    • H03H9/0538Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0542Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Diaphragms For Electromechanical Transducers (AREA)
DE69325763T 1992-10-05 1993-10-05 Elektroakustische Hybride integrierte Schaltung und Methode zu deren Herstellung Expired - Fee Related DE69325763T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP26615892A JP2589634B2 (ja) 1992-10-05 1992-10-05 電子音響集積回路とその製造方法
JP27400292A JP2563733B2 (ja) 1992-10-13 1992-10-13 電子音響集積回路およびその製造方法
JP27400392A JP2574612B2 (ja) 1992-10-13 1992-10-13 電子音響集積回路およびその製造方法

Publications (2)

Publication Number Publication Date
DE69325763D1 DE69325763D1 (de) 1999-09-02
DE69325763T2 true DE69325763T2 (de) 2000-04-20

Family

ID=27335442

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69325763T Expired - Fee Related DE69325763T2 (de) 1992-10-05 1993-10-05 Elektroakustische Hybride integrierte Schaltung und Methode zu deren Herstellung

Country Status (4)

Country Link
EP (1) EP0591918B1 (de)
KR (1) KR0158898B1 (de)
DE (1) DE69325763T2 (de)
NO (1) NO310996B1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6270202B1 (en) 1997-04-24 2001-08-07 Matsushita Electric Industrial Co., Ltd. Liquid jetting apparatus having a piezoelectric drive element directly bonded to a casing
US6081171A (en) * 1998-04-08 2000-06-27 Nokia Mobile Phones Limited Monolithic filters utilizing thin film bulk acoustic wave devices and minimum passive components for controlling the shape and width of a passband response
WO2001059812A2 (de) * 2000-02-11 2001-08-16 Siemens Aktiengesellschaft Satz umfassend viele erzeugnisse mit jeweils einem abstimmbaren elektronischen bauelement, sowie satz von anordnungen umfassend jeweils ein solches erzeugnis
US8735219B2 (en) 2012-08-30 2014-05-27 Ziptronix, Inc. Heterogeneous annealing method and device
CN105141278B (zh) * 2015-07-21 2018-05-22 苏州能讯高能半导体有限公司 一种晶体管与薄膜体声波谐振器集成的放大模块
US11664357B2 (en) 2018-07-03 2023-05-30 Adeia Semiconductor Bonding Technologies Inc. Techniques for joining dissimilar materials in microelectronics

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4665374A (en) * 1985-12-20 1987-05-12 Allied Corporation Monolithic programmable signal processor using PI-FET taps
DE3922671A1 (de) * 1989-07-10 1991-01-24 Siemens Ag Akustoelektronisches bauelement mit einer oberflaechenwellenanordnung und einer elektronischen halbleiterschaltung
JPH03178206A (ja) * 1989-12-06 1991-08-02 Nec Corp モノリシック集積回路化発振器
EP0531985B1 (de) * 1991-09-12 1999-02-24 Matsushita Electric Industrial Co., Ltd. Elektroakustische hybride integrierte Schaltung und ihre Herstellungsverfahren

Also Published As

Publication number Publication date
NO933534D0 (no) 1993-10-04
EP0591918A1 (de) 1994-04-13
DE69325763D1 (de) 1999-09-02
NO933534L (no) 1994-04-06
EP0591918B1 (de) 1999-07-28
KR0158898B1 (ko) 1999-10-01
NO310996B1 (no) 2001-09-24

Similar Documents

Publication Publication Date Title
DE69232277D1 (de) Elektroakustische hybride integrierte Schaltung und Methode zu deren Herstellung
DE69331416D1 (de) Verbindungsstruktur fur integrierte schaltung und verfahren zu deren herstellung
DE69411438D1 (de) Schaltungsanordnungen und Verfahren zu deren Herstellung
DE59707274D1 (de) Integrierte CMOS-Schaltungsanordnung und Verfahren zu deren Herstellung
ATA95691A (de) Leistungstransistorvorrichtung und verfahren zu deren herstellung
DE69615437T2 (de) Integrierte Schaltungsanordnung und Herstellungsverfahren
DE69322807T2 (de) Zahnprothese und Herstellungsverfahren
DE69128334D1 (de) Integrierte Schaltung und Verfahren zu deren Herstellung
DE69417346T2 (de) Bildaufnehmer und Herstellungsverfahren
DE69409907T2 (de) Hochmicroporöse Kohlenstoffe und Verfahren zu ihrer Herstellung
DE69637728D1 (de) Halbleiterbauteil und Herstellung desselben
DE69431723T2 (de) Leiterplatte und verfahren zu deren herstellung
DE69326373D1 (de) Elektrokatalysator und Verfahren zur Herstellung
DE69318771T2 (de) Multichip-Modul und Verfahren zu seiner Herstellung
DE69114407T2 (de) Leistungskondensator und Verfahren zu seiner Herstellung.
DE69525496T2 (de) Leiterrahmen und Herstellungsverfahren
DE59108343D1 (de) Elektrische Schaltungsanordnung und Verfahren zu deren Herstellung
DE59913421D1 (de) Integrierte schaltungsanordnung und verfahren zu deren herstellung
DE69232348D1 (de) Integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung
DE3688711D1 (de) Integrierte halbleiterschaltungsanordnung und verfahren zu ihrer herstellung.
DE69325763D1 (de) Elektroakustische Hybride integrierte Schaltung und Methode zu deren Herstellung
DE69113725D1 (de) Leistungstransistor und Verfahren zur Herstellung.
DE69311869D1 (de) Membranmodul und Verfahren zu seiner Herstellung
DE69124072D1 (de) Supraleitende Schaltung und Verfahren zu ihrer Herstellung
DE59208833D1 (de) Leistungs-halbleiterbauelement und verfahren zu dessen herstellung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee