DE69324952D1 - Wechselspannungsschalter - Google Patents

Wechselspannungsschalter

Info

Publication number
DE69324952D1
DE69324952D1 DE69324952T DE69324952T DE69324952D1 DE 69324952 D1 DE69324952 D1 DE 69324952D1 DE 69324952 T DE69324952 T DE 69324952T DE 69324952 T DE69324952 T DE 69324952T DE 69324952 D1 DE69324952 D1 DE 69324952D1
Authority
DE
Germany
Prior art keywords
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69324952T
Other languages
English (en)
Other versions
DE69324952T2 (de
Inventor
Robert Pezzani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Publication of DE69324952D1 publication Critical patent/DE69324952D1/de
Application granted granted Critical
Publication of DE69324952T2 publication Critical patent/DE69324952T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Thyristor Switches And Gates (AREA)
DE69324952T 1992-03-20 1993-03-17 Wechselspannungsschalter Expired - Fee Related DE69324952T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR929203763A FR2688941B1 (fr) 1992-03-20 1992-03-20 Interrupteur de tension alternative a declenchement sur une alternance determinee et conduction par periode.

Publications (2)

Publication Number Publication Date
DE69324952D1 true DE69324952D1 (de) 1999-06-24
DE69324952T2 DE69324952T2 (de) 1999-12-09

Family

ID=9428192

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69324952T Expired - Fee Related DE69324952T2 (de) 1992-03-20 1993-03-17 Wechselspannungsschalter

Country Status (5)

Country Link
US (3) US5471074A (de)
EP (1) EP0561721B1 (de)
JP (1) JP3253731B2 (de)
DE (1) DE69324952T2 (de)
FR (1) FR2688941B1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2688941B1 (fr) * 1992-03-20 1994-06-17 Sgs Thomson Microelectronics Interrupteur de tension alternative a declenchement sur une alternance determinee et conduction par periode.
US5682044A (en) * 1995-01-31 1997-10-28 Takashige Tamamushi Reverse conducting thyristor with a planar-gate, buried-gate, or recessed-gate structure
US6480056B1 (en) 1997-06-09 2002-11-12 Sgs-Thomson Microelectronics S.A. Network of triacs with gates referenced with respect to a common opposite face electrode
FR2753006B1 (fr) * 1996-08-27 1998-11-27 Sgs Thomson Microelectronics Pont redresseur protege monolithique
DE19906384A1 (de) * 1999-02-16 2000-08-24 Siemens Ag IGBT mit PN-Isolation
GB2374218A (en) * 2001-04-06 2002-10-09 John Russell Fielden Switch & switching circuit
JP4991722B2 (ja) * 2005-08-08 2012-08-01 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 超音波トランスデューサアレイ
US8835975B1 (en) * 2013-05-10 2014-09-16 Ixys Corporation Ultra-fast breakover diode

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3310687A (en) * 1964-02-07 1967-03-21 Gen Electric Power control circuits utilizing a bi-directional semiconductor
US3489926A (en) * 1966-04-28 1970-01-13 Gen Electric Turn-on and turn-off circuit for a semiconductor controlled rectifier energized by an alternating current supply
US3495097A (en) * 1967-09-14 1970-02-10 Ibm Signal detector circuit
JPS5241146B2 (de) * 1974-01-30 1977-10-17
CH609714A5 (en) * 1974-07-15 1979-03-15 Agfa Gevaert Ag Process for the production of a hydrophilic surface on silicone rubber mouldings
US3996601A (en) * 1974-07-15 1976-12-07 Hutson Jerald L Shorting structure for multilayer semiconductor switching devices
US4060824A (en) * 1974-07-15 1977-11-29 Hutson Jearld L Slow speed semiconductor switching device
US4190853A (en) * 1974-07-15 1980-02-26 Hutson Jearld L Multilayer semiconductor switching devices
SE414357B (sv) * 1978-08-17 1980-07-21 Asea Ab Overspenningsskydd for skydd av halvledarkomponenter av lageffekttyp
JPS56104467A (en) * 1980-01-23 1981-08-20 Nippon Telegr & Teleph Corp <Ntt> Reverse conducting thyristor
SE431381B (sv) * 1982-06-03 1984-01-30 Asea Ab Tvapoligt overstromsskydd
SE435436B (sv) * 1983-02-16 1984-09-24 Asea Ab Tvapoligt overstromsskydd
JPS61140174A (ja) * 1984-12-12 1986-06-27 Hitachi Ltd ゲ−トタ−ンオフサイリスタ
CH668505A5 (de) * 1985-03-20 1988-12-30 Bbc Brown Boveri & Cie Halbleiterbauelement.
JPS6384066A (ja) * 1986-09-26 1988-04-14 Semiconductor Res Found 集積化光トリガ・光クエンチ静電誘導サイリスタ及びその製造方法
FR2688941B1 (fr) * 1992-03-20 1994-06-17 Sgs Thomson Microelectronics Interrupteur de tension alternative a declenchement sur une alternance determinee et conduction par periode.

Also Published As

Publication number Publication date
US5569940A (en) 1996-10-29
JPH0645348A (ja) 1994-02-18
EP0561721B1 (de) 1999-05-19
JP3253731B2 (ja) 2002-02-04
US5471074A (en) 1995-11-28
FR2688941B1 (fr) 1994-06-17
US5596292A (en) 1997-01-21
EP0561721A1 (de) 1993-09-22
FR2688941A1 (fr) 1993-09-24
DE69324952T2 (de) 1999-12-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee