DE69321455T2 - Verfahren für die selektive Ätzung von GaAs auf AlGaAs - Google Patents

Verfahren für die selektive Ätzung von GaAs auf AlGaAs

Info

Publication number
DE69321455T2
DE69321455T2 DE69321455T DE69321455T DE69321455T2 DE 69321455 T2 DE69321455 T2 DE 69321455T2 DE 69321455 T DE69321455 T DE 69321455T DE 69321455 T DE69321455 T DE 69321455T DE 69321455 T2 DE69321455 T2 DE 69321455T2
Authority
DE
Germany
Prior art keywords
algaas
gaas
selective etching
etching
selective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69321455T
Other languages
English (en)
Other versions
DE69321455D1 (de
Inventor
Lawrence Edwin Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69321455D1 publication Critical patent/DE69321455D1/de
Publication of DE69321455T2 publication Critical patent/DE69321455T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69321455T 1992-11-25 1993-11-18 Verfahren für die selektive Ätzung von GaAs auf AlGaAs Expired - Fee Related DE69321455T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/982,194 US5380398A (en) 1992-11-25 1992-11-25 Method for selectively etching AlGaAs

Publications (2)

Publication Number Publication Date
DE69321455D1 DE69321455D1 (de) 1998-11-12
DE69321455T2 true DE69321455T2 (de) 1999-05-12

Family

ID=25528923

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69321455T Expired - Fee Related DE69321455T2 (de) 1992-11-25 1993-11-18 Verfahren für die selektive Ätzung von GaAs auf AlGaAs

Country Status (4)

Country Link
US (1) US5380398A (de)
EP (1) EP0607662B1 (de)
JP (1) JP2823790B2 (de)
DE (1) DE69321455T2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2310755A (en) * 1996-02-28 1997-09-03 Sharp Kk A method of etching a semiconductor structure

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4326911A (en) * 1980-01-29 1982-04-27 Bell Telephone Laboratories, Incorporated Reactive ion etching of III-V compounds including InP, GaAs-InP and GaAlAs
GB8516984D0 (en) * 1985-07-04 1985-08-07 British Telecomm Etching method
EP0348944B1 (de) * 1988-06-28 1997-10-22 Nec Corporation Halbleitervorrichtung mit Verbindungshalbleiterfet mit E/D-Struktur mit hoher Geräuschmarge
JPH04105319A (ja) * 1990-08-24 1992-04-07 Sony Corp 選択エッチング方法
JPH0582560A (ja) * 1991-09-20 1993-04-02 Sony Corp 電界効果型トランジスタの製造方法

Also Published As

Publication number Publication date
JPH06224157A (ja) 1994-08-12
EP0607662B1 (de) 1998-10-07
JP2823790B2 (ja) 1998-11-11
DE69321455D1 (de) 1998-11-12
EP0607662A1 (de) 1994-07-27
US5380398A (en) 1995-01-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee