DE69319759D1 - Verfahren zum schnellen Plasma-Hydrogenieren für MOSFET aus Polysilizium - Google Patents
Verfahren zum schnellen Plasma-Hydrogenieren für MOSFET aus PolysiliziumInfo
- Publication number
- DE69319759D1 DE69319759D1 DE69319759T DE69319759T DE69319759D1 DE 69319759 D1 DE69319759 D1 DE 69319759D1 DE 69319759 T DE69319759 T DE 69319759T DE 69319759 T DE69319759 T DE 69319759T DE 69319759 D1 DE69319759 D1 DE 69319759D1
- Authority
- DE
- Germany
- Prior art keywords
- hydrogenation method
- plasma hydrogenation
- rapid plasma
- polysilicon mosfet
- mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005984 hydrogenation reaction Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title 1
- 229920005591 polysilicon Polymers 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/128—Proton bombardment of silicon
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Plasma & Fusion (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/842,854 US5250444A (en) | 1992-02-21 | 1992-02-21 | Rapid plasma hydrogenation process for polysilicon MOSFETs |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69319759D1 true DE69319759D1 (de) | 1998-08-27 |
| DE69319759T2 DE69319759T2 (de) | 1999-03-04 |
Family
ID=25288409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69319759T Expired - Fee Related DE69319759T2 (de) | 1992-02-21 | 1993-02-15 | Verfahren zum schnellen Plasma-Hydrogenieren für MOSFET aus Polysilizium |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5250444A (de) |
| EP (1) | EP0556912B1 (de) |
| JP (1) | JPH0785474B2 (de) |
| KR (1) | KR930018648A (de) |
| DE (1) | DE69319759T2 (de) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2923700B2 (ja) | 1991-03-27 | 1999-07-26 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| KR950005484B1 (ko) * | 1992-09-29 | 1995-05-24 | 현대전자산업주식회사 | 플라즈마 산화 처리를 이용한 폴리실리콘 박막트랜지스터 제조방법 |
| JP2677167B2 (ja) * | 1993-07-08 | 1997-11-17 | 日本電気株式会社 | 駆動回路内蔵型液晶表示装置の製造方法 |
| KR100333153B1 (ko) | 1993-09-07 | 2002-12-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치제작방법 |
| JP2536426B2 (ja) * | 1993-09-21 | 1996-09-18 | 日本電気株式会社 | 半導体装置の製造方法 |
| JPH07109573A (ja) * | 1993-10-12 | 1995-04-25 | Semiconductor Energy Lab Co Ltd | ガラス基板および加熱処理方法 |
| KR100275715B1 (ko) * | 1993-12-28 | 2000-12-15 | 윤종용 | 수소화 효과 증대를 위한 반도체 소자의 제조 방법 |
| US5635408A (en) * | 1994-04-28 | 1997-06-03 | Canon Kabushiki Kaisha | Method of producing a semiconductor device |
| US5508227A (en) * | 1994-06-08 | 1996-04-16 | Northeastern University | Plasma ion implantation hydrogenation process utilizing voltage pulse applied to substrate |
| US5883016A (en) * | 1994-06-08 | 1999-03-16 | Northeastern University | Apparatus and method for hydrogenating polysilicon thin film transistors by plasma immersion ion implantation |
| US5518935A (en) * | 1994-06-17 | 1996-05-21 | At&T Corp. | Hydrogenation of photoresponsive semiconductor devices |
| JP2738315B2 (ja) * | 1994-11-22 | 1998-04-08 | 日本電気株式会社 | 薄膜トランジスタおよびその製造方法 |
| US6399976B1 (en) * | 1995-06-06 | 2002-06-04 | International Business Machines Corporation | Shrink-wrap collar for DRAM deep trenches |
| JP2978746B2 (ja) * | 1995-10-31 | 1999-11-15 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6489219B1 (en) | 1995-11-09 | 2002-12-03 | Micron Technology, Inc. | Method of alloying a semiconductor device |
| US5866946A (en) * | 1996-05-23 | 1999-02-02 | Kabushiki Kaisha Toshiba | Semiconductor device having a plug for diffusing hydrogen into a semiconductor substrate |
| US5744202A (en) * | 1996-09-30 | 1998-04-28 | Xerox Corporation | Enhancement of hydrogenation of materials encapsulated by an oxide |
| US6057182A (en) * | 1997-09-05 | 2000-05-02 | Sarnoff Corporation | Hydrogenation of polysilicon thin film transistors |
| JP3144367B2 (ja) * | 1997-12-19 | 2001-03-12 | 日本電気株式会社 | Ｃｏｂ型ｄｒａｍ半導体装置及びその製造方法 |
| US6028015A (en) * | 1999-03-29 | 2000-02-22 | Lsi Logic Corporation | Process for treating damaged surfaces of low dielectric constant organo silicon oxide insulation material to inhibit moisture absorption |
| US6730580B2 (en) * | 2001-07-03 | 2004-05-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Silicon substrate wafer fabrication method employing halogen gettering material and/or plasma annealing |
| GB0222450D0 (en) * | 2002-09-27 | 2002-11-06 | Koninkl Philips Electronics Nv | Method of manufacturing an electronic device comprising a thin film transistor |
| US7446023B2 (en) * | 2004-03-15 | 2008-11-04 | Sharp Laboratories Of America, Inc. | High-density plasma hydrogenation |
| JP2008546191A (ja) * | 2005-06-03 | 2008-12-18 | シーエスジー ソーラー アクチェンゲゼルシャフト | 薄膜シリコン・オン・グラスの水素化装置およびその方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4113514A (en) * | 1978-01-16 | 1978-09-12 | Rca Corporation | Method of passivating a semiconductor device by treatment with atomic hydrogen |
| FR2461359A1 (fr) * | 1979-07-06 | 1981-01-30 | Commissariat Energie Atomique | Procede et appareil d'hydrogenation de dispositifs a semi-conducteurs |
| US4315782A (en) * | 1980-07-21 | 1982-02-16 | Rca Corporation | Method of making semiconductor device with passivated rectifying junctions having hydrogenated amorphous regions |
| GB2140202A (en) * | 1983-05-16 | 1984-11-21 | Philips Electronic Associated | Methods of manufacturing semiconductor devices |
| JPH0687503B2 (ja) * | 1987-03-11 | 1994-11-02 | 株式会社日立製作所 | 薄膜半導体装置 |
| JPS6445172A (en) * | 1987-08-13 | 1989-02-17 | Seiko Epson Corp | Hydrogen plasma treatment of polycrystalline silicon thin film transistor |
| US5112764A (en) * | 1990-09-04 | 1992-05-12 | North American Philips Corporation | Method for the fabrication of low leakage polysilicon thin film transistors |
-
1992
- 1992-02-21 US US07/842,854 patent/US5250444A/en not_active Expired - Fee Related
-
1993
- 1993-02-15 DE DE69319759T patent/DE69319759T2/de not_active Expired - Fee Related
- 1993-02-15 EP EP93200405A patent/EP0556912B1/de not_active Expired - Lifetime
- 1993-02-18 JP JP5029073A patent/JPH0785474B2/ja not_active Expired - Lifetime
- 1993-02-18 KR KR1019930002263A patent/KR930018648A/ko active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| JPH065612A (ja) | 1994-01-14 |
| US5250444A (en) | 1993-10-05 |
| EP0556912B1 (de) | 1998-07-22 |
| EP0556912A2 (de) | 1993-08-25 |
| DE69319759T2 (de) | 1999-03-04 |
| KR930018648A (ko) | 1993-09-22 |
| JPH0785474B2 (ja) | 1995-09-13 |
| EP0556912A3 (en) | 1994-05-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N |
|
| 8339 | Ceased/non-payment of the annual fee |