DE69316919D1 - Verfahren und vorrichtung zum messen der temperatur eines objektes, besonders eines halbleiters, mittels ellipsometrie - Google Patents

Verfahren und vorrichtung zum messen der temperatur eines objektes, besonders eines halbleiters, mittels ellipsometrie

Info

Publication number
DE69316919D1
DE69316919D1 DE69316919T DE69316919T DE69316919D1 DE 69316919 D1 DE69316919 D1 DE 69316919D1 DE 69316919 T DE69316919 T DE 69316919T DE 69316919 T DE69316919 T DE 69316919T DE 69316919 D1 DE69316919 D1 DE 69316919D1
Authority
DE
Germany
Prior art keywords
ellipsometry
semiconductor
measuring
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69316919T
Other languages
English (en)
Other versions
DE69316919T2 (de
Inventor
Jacques Joseph
Yao-Zhi Hu
Eugene Irene
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ecole Centrale de Lyon
Original Assignee
Ecole Centrale de Lyon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ecole Centrale de Lyon filed Critical Ecole Centrale de Lyon
Publication of DE69316919D1 publication Critical patent/DE69316919D1/de
Application granted granted Critical
Publication of DE69316919T2 publication Critical patent/DE69316919T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K11/00Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
    • G01K11/12Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using changes in colour, translucency or reflectance
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/02Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0641Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
    • G01B11/065Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization using one or more discrete wavelengths

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
DE69316919T 1992-11-25 1993-11-19 Verfahren und vorrichtung zum messen der temperatur eines objektes, besonders eines halbleiters, mittels ellipsometrie Expired - Fee Related DE69316919T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9214430A FR2698443B1 (fr) 1992-11-25 1992-11-25 Procédé et appareil pour mesurer par ellipsométrie la température d'un objet, notamment semi-conducteur.
PCT/FR1993/001142 WO1994012857A1 (fr) 1992-11-25 1993-11-19 Procede et appareil pour mesurer par ellipsometrie la temperature d'un objet, notamment semi-conducteur

Publications (2)

Publication Number Publication Date
DE69316919D1 true DE69316919D1 (de) 1998-03-12
DE69316919T2 DE69316919T2 (de) 1998-09-03

Family

ID=9436083

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69316919T Expired - Fee Related DE69316919T2 (de) 1992-11-25 1993-11-19 Verfahren und vorrichtung zum messen der temperatur eines objektes, besonders eines halbleiters, mittels ellipsometrie

Country Status (5)

Country Link
US (1) US5624190A (de)
EP (1) EP0670993B1 (de)
DE (1) DE69316919T2 (de)
FR (1) FR2698443B1 (de)
WO (1) WO1994012857A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2771850B1 (fr) * 1997-12-02 2001-06-08 France Telecom Procede de fabrication de dispositifs en couches minces utilisant la technique de la reflectance anisotrope
US6002113A (en) * 1998-05-18 1999-12-14 Lucent Technologies Inc. Apparatus for processing silicon devices with improved temperature control
US6475815B1 (en) * 1998-12-09 2002-11-05 Matsushita Electric Industrial Co., Ltd. Method of measuring temperature, method of taking samples for temperature measurement and method for fabricating semiconductor device
JP4421054B2 (ja) 2000-03-01 2010-02-24 Okiセミコンダクタ宮城株式会社 半導体薄膜の表面形状測定方法
US20020027941A1 (en) * 2000-08-25 2002-03-07 Jerry Schlagheck Method and apparatus for detection of defects using localized heat injection of narrow laser pulses
US6519045B2 (en) 2001-01-31 2003-02-11 Rudolph Technologies, Inc. Method and apparatus for measuring very thin dielectric film thickness and creating a stable measurement environment
US8293544B2 (en) 2008-07-28 2012-10-23 Globalfoundries Singapore Pte. Ltd. Method and apparatus to reduce thermal variations within an integrated circuit die using thermal proximity correction
US9360302B2 (en) * 2011-12-15 2016-06-07 Kla-Tencor Corporation Film thickness monitor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4332833A (en) * 1980-02-29 1982-06-01 Bell Telephone Laboratories, Incorporated Method for optical monitoring in materials fabrication
FR2508637A1 (fr) * 1981-06-25 1982-12-31 Paris X Nanterre Universite Perfectionnements apportes aux procedes de mesures a distance de l'emissivite et/ou de la temperature vraie d'un corps a surface relativment lisse
JPS5930004A (ja) * 1982-08-09 1984-02-17 インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン 膜厚測定装置
KR960013995B1 (ko) * 1988-07-15 1996-10-11 도오교오 에레구토론 가부시끼가이샤 반도체 웨이퍼 기판의 표면온도 측정 방법 및 열처리 장치
US4969748A (en) * 1989-04-13 1990-11-13 Peak Systems, Inc. Apparatus and method for compensating for errors in temperature measurement of semiconductor wafers during rapid thermal processing
US5011295A (en) * 1989-10-17 1991-04-30 Houston Advanced Research Center Method and apparatus to simultaneously measure emissivities and thermodynamic temperatures of remote objects
US5102231A (en) * 1991-01-29 1992-04-07 Texas Instruments Incorporated Semiconductor wafer temperature measurement system and method
US5249865A (en) * 1992-04-27 1993-10-05 Texas Instruments Incorporated Interferometric temperature measurement system and method
US5322361A (en) * 1993-01-28 1994-06-21 C.I. Systems (Israel) Ltd. Method and apparatus for measuring temperature
US5501637A (en) * 1993-08-10 1996-03-26 Texas Instruments Incorporated Temperature sensor and method

Also Published As

Publication number Publication date
DE69316919T2 (de) 1998-09-03
EP0670993B1 (de) 1998-02-04
FR2698443B1 (fr) 1995-03-10
FR2698443A1 (fr) 1994-05-27
WO1994012857A1 (fr) 1994-06-09
US5624190A (en) 1997-04-29
EP0670993A1 (de) 1995-09-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee