DE69233384D1 - Nicht-flüchtiger Halbleiterspeicher - Google Patents

Nicht-flüchtiger Halbleiterspeicher

Info

Publication number
DE69233384D1
DE69233384D1 DE69233384T DE69233384T DE69233384D1 DE 69233384 D1 DE69233384 D1 DE 69233384D1 DE 69233384 T DE69233384 T DE 69233384T DE 69233384 T DE69233384 T DE 69233384T DE 69233384 D1 DE69233384 D1 DE 69233384D1
Authority
DE
Germany
Prior art keywords
group
data items
address
read
reading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69233384T
Other languages
English (en)
Other versions
DE69233384T2 (de
Inventor
Yasushi Kasa
Takao Akaogi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3346663A external-priority patent/JP2732471B2/ja
Priority claimed from JP32430292A external-priority patent/JP3544678B2/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE69233384D1 publication Critical patent/DE69233384D1/de
Application granted granted Critical
Publication of DE69233384T2 publication Critical patent/DE69233384T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/26Sensing or reading circuits; Data output circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/30Power supply circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/52Protection of memory contents; Detection of errors in memory contents
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2201/00Indexing scheme relating to error detection, to error correction, and to monitoring
    • G06F2201/81Threshold
DE1992633384 1991-12-27 1992-12-29 Nicht-flüchtiger Halbleiterspeicher Expired - Fee Related DE69233384T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP3346663A JP2732471B2 (ja) 1991-12-27 1991-12-27 不揮発性半導体記憶装置
JP34666391 1991-12-27
JP32430292A JP3544678B2 (ja) 1992-12-03 1992-12-03 半導体記憶装置
JP32430292 1992-12-03

Publications (2)

Publication Number Publication Date
DE69233384D1 true DE69233384D1 (de) 2004-08-26
DE69233384T2 DE69233384T2 (de) 2005-08-25

Family

ID=32774151

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1992633384 Expired - Fee Related DE69233384T2 (de) 1991-12-27 1992-12-29 Nicht-flüchtiger Halbleiterspeicher

Country Status (2)

Country Link
EP (1) EP0933778B1 (de)
DE (1) DE69233384T2 (de)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4156905A (en) * 1974-02-28 1979-05-29 Ncr Corporation Method and apparatus for improving access speed in a random access memory
US4509142A (en) * 1982-12-15 1985-04-02 Texas Instruments Incorporated Semiconductor memory device with pipeline access

Also Published As

Publication number Publication date
EP0933778A3 (de) 1999-11-17
EP0933778B1 (de) 2004-07-21
EP0933778A2 (de) 1999-08-04
DE69233384T2 (de) 2005-08-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee