DE69233384D1 - Nicht-flüchtiger Halbleiterspeicher - Google Patents
Nicht-flüchtiger HalbleiterspeicherInfo
- Publication number
- DE69233384D1 DE69233384D1 DE69233384T DE69233384T DE69233384D1 DE 69233384 D1 DE69233384 D1 DE 69233384D1 DE 69233384 T DE69233384 T DE 69233384T DE 69233384 T DE69233384 T DE 69233384T DE 69233384 D1 DE69233384 D1 DE 69233384D1
- Authority
- DE
- Germany
- Prior art keywords
- group
- data items
- address
- read
- reading
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/52—Protection of memory contents; Detection of errors in memory contents
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
- G06F2201/81—Threshold
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3346663A JP2732471B2 (ja) | 1991-12-27 | 1991-12-27 | 不揮発性半導体記憶装置 |
JP34666391 | 1991-12-27 | ||
JP32430292A JP3544678B2 (ja) | 1992-12-03 | 1992-12-03 | 半導体記憶装置 |
JP32430292 | 1992-12-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69233384D1 true DE69233384D1 (de) | 2004-08-26 |
DE69233384T2 DE69233384T2 (de) | 2005-08-25 |
Family
ID=32774151
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1992633384 Expired - Fee Related DE69233384T2 (de) | 1991-12-27 | 1992-12-29 | Nicht-flüchtiger Halbleiterspeicher |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP0933778B1 (de) |
DE (1) | DE69233384T2 (de) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4156905A (en) * | 1974-02-28 | 1979-05-29 | Ncr Corporation | Method and apparatus for improving access speed in a random access memory |
US4509142A (en) * | 1982-12-15 | 1985-04-02 | Texas Instruments Incorporated | Semiconductor memory device with pipeline access |
-
1992
- 1992-12-29 EP EP98121760A patent/EP0933778B1/de not_active Expired - Lifetime
- 1992-12-29 DE DE1992633384 patent/DE69233384T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0933778A3 (de) | 1999-11-17 |
EP0933778B1 (de) | 2004-07-21 |
EP0933778A2 (de) | 1999-08-04 |
DE69233384T2 (de) | 2005-08-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |