DE69226400D1 - Offsetstromleseverstärker - Google Patents
OffsetstromleseverstärkerInfo
- Publication number
- DE69226400D1 DE69226400D1 DE69226400T DE69226400T DE69226400D1 DE 69226400 D1 DE69226400 D1 DE 69226400D1 DE 69226400 T DE69226400 T DE 69226400T DE 69226400 T DE69226400 T DE 69226400T DE 69226400 D1 DE69226400 D1 DE 69226400D1
- Authority
- DE
- Germany
- Prior art keywords
- sense amplifier
- current sense
- offset current
- offset
- amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITVA910012A IT1249809B (it) | 1991-05-10 | 1991-05-10 | Circuito di lettura a offset di corrente modulata o a sbilanciamento di corrente per celle di memorie programmabili |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69226400D1 true DE69226400D1 (de) | 1998-09-03 |
DE69226400T2 DE69226400T2 (de) | 1998-12-03 |
Family
ID=11423125
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69226400T Expired - Fee Related DE69226400T2 (de) | 1991-05-10 | 1992-05-05 | Offsetstromleseverstärker |
Country Status (5)
Country | Link |
---|---|
US (1) | US5327379A (de) |
EP (1) | EP0514350B1 (de) |
JP (1) | JP3307423B2 (de) |
DE (1) | DE69226400T2 (de) |
IT (1) | IT1249809B (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5461713A (en) * | 1991-05-10 | 1995-10-24 | Sgs-Thomson Microelectronics S.R.L. | Current offset sense amplifier of a modulated current or current unbalance type for programmable memories |
DE69224125T2 (de) * | 1991-09-26 | 1998-08-27 | St Microelectronics Srl | Leseverstärker |
GB9423034D0 (en) * | 1994-11-15 | 1995-01-04 | Sgs Thomson Microelectronics | A reference circuit |
DE69514793T2 (de) * | 1995-08-03 | 2000-06-29 | St Microelectronics Srl | Stromdetektorschaltung |
US5680357A (en) * | 1996-09-09 | 1997-10-21 | Hewlett Packard Company | High speed, low noise, low power, electronic memory sensing scheme |
US5959467A (en) * | 1996-09-30 | 1999-09-28 | Advanced Micro Devices, Inc. | High speed dynamic differential logic circuit employing capacitance matching devices |
DE69820594D1 (de) * | 1998-05-29 | 2004-01-29 | St Microelectronics Srl | Anordnung und Verfahren zum Lesen von nichtflüchtigen Speicherzellen |
KR100287884B1 (ko) | 1998-11-26 | 2001-05-02 | 김영환 | 반도체 메모리소자의 센싱회로 및 그를 이용한센싱방법 |
US6115308A (en) * | 1999-06-17 | 2000-09-05 | International Business Machines Corporation | Sense amplifier and method of using the same with pipelined read, restore and write operations |
FR2801719B1 (fr) * | 1999-11-30 | 2002-03-01 | St Microelectronics Sa | Dispositif de lecture pour memoire en circuit integre |
US6573772B1 (en) | 2000-06-30 | 2003-06-03 | Intel Corporation | Method and apparatus for locking self-timed pulsed clock |
US7313041B1 (en) * | 2003-06-23 | 2007-12-25 | Cypress Semiconductor Corporation | Sense amplifier circuit and method |
US7616513B1 (en) | 2004-10-29 | 2009-11-10 | Cypress Semiconductor Corporation | Memory device, current sense amplifier, and method of operating the same |
US7956641B1 (en) | 2005-04-28 | 2011-06-07 | Cypress Semiconductor Corporation | Low voltage interface circuit |
KR20090119143A (ko) * | 2008-05-15 | 2009-11-19 | 삼성전자주식회사 | 비트라인 센스 앰프, 이를 포함하는 메모리 코어 및 반도체메모리 장치 |
FR2982700B1 (fr) * | 2011-11-15 | 2014-02-07 | Soitec Silicon On Insulator | Amplificateur de lecture avec transistors de precharge et de decodage a grille double |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6177199A (ja) * | 1984-09-21 | 1986-04-19 | Toshiba Corp | 半導体記憶装置 |
JPH0682520B2 (ja) * | 1987-07-31 | 1994-10-19 | 株式会社東芝 | 半導体メモリ |
-
1991
- 1991-05-10 IT ITVA910012A patent/IT1249809B/it active IP Right Grant
-
1992
- 1992-05-04 US US07/878,823 patent/US5327379A/en not_active Expired - Lifetime
- 1992-05-05 EP EP92830205A patent/EP0514350B1/de not_active Expired - Lifetime
- 1992-05-05 DE DE69226400T patent/DE69226400T2/de not_active Expired - Fee Related
- 1992-05-11 JP JP14491092A patent/JP3307423B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
ITVA910012A1 (it) | 1992-11-10 |
US5327379A (en) | 1994-07-05 |
IT1249809B (it) | 1995-03-28 |
EP0514350A2 (de) | 1992-11-19 |
DE69226400T2 (de) | 1998-12-03 |
JPH076592A (ja) | 1995-01-10 |
ITVA910012A0 (it) | 1991-05-10 |
EP0514350A3 (de) | 1994-02-02 |
EP0514350B1 (de) | 1998-07-29 |
JP3307423B2 (ja) | 2002-07-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |