DE69214876D1 - Kathodenstrahlröhre/Abtastlaser mit schneller Abtastung - Google Patents
Kathodenstrahlröhre/Abtastlaser mit schneller AbtastungInfo
- Publication number
- DE69214876D1 DE69214876D1 DE69214876T DE69214876T DE69214876D1 DE 69214876 D1 DE69214876 D1 DE 69214876D1 DE 69214876 T DE69214876 T DE 69214876T DE 69214876 T DE69214876 T DE 69214876T DE 69214876 D1 DE69214876 D1 DE 69214876D1
- Authority
- DE
- Germany
- Prior art keywords
- scanning
- ray tube
- cathode ray
- fast
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
- H01J29/48—Electron guns
- H01J29/488—Schematic arrangements of the electrodes for beam forming; Place and form of the elecrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
- H01J29/58—Arrangements for focusing or reflecting ray or beam
- H01J29/62—Electrostatic lenses
- H01J29/622—Electrostatic lenses producing fields exhibiting symmetry of revolution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/0955—Processes or apparatus for excitation, e.g. pumping using pumping by high energy particles
- H01S3/0959—Processes or apparatus for excitation, e.g. pumping using pumping by high energy particles by an electron beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2229/00—Details of cathode ray tubes or electron beam tubes
- H01J2229/48—Electron guns
- H01J2229/4824—Constructional arrangements of electrodes
- H01J2229/4827—Electrodes formed on surface of common cylindrical support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Details Of Television Scanning (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP91107901 | 1991-05-16 | ||
EP92200785 | 1992-03-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69214876D1 true DE69214876D1 (de) | 1996-12-05 |
DE69214876T2 DE69214876T2 (de) | 1997-04-30 |
Family
ID=26128854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69214876T Expired - Fee Related DE69214876T2 (de) | 1991-05-16 | 1992-05-08 | Kathodenstrahlröhre/Abtastlaser mit schneller Abtastung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5521464A (de) |
EP (1) | EP0513909B1 (de) |
JP (1) | JPH05258683A (de) |
DE (1) | DE69214876T2 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996002932A1 (en) * | 1994-07-19 | 1996-02-01 | Philips Electronics N.V. | An electron beam device having a resistive focusing lens structure and method for making such a device |
US5789852A (en) * | 1994-12-16 | 1998-08-04 | U.S. Philips Corporation | Rapidly scanning cathode-ray tube laser |
JPH10512711A (ja) * | 1995-11-08 | 1998-12-02 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 電子−光学装置 |
US5749638A (en) * | 1995-11-14 | 1998-05-12 | U.S. Philips Corporation | Rapidly scanning cathode-ray tube laser |
JPH09293465A (ja) * | 1995-11-28 | 1997-11-11 | Matsushita Electric Ind Co Ltd | 陰極線管用抵抗体の製造方法 |
KR100302155B1 (ko) * | 1996-04-11 | 2001-10-26 | 모리시타 요이찌 | 전자총과 전자총을 사용한 음극선관 및 전자총의 제조방법 |
US6270390B1 (en) | 1996-04-11 | 2001-08-07 | Matsushita Electric Industrial Co., Ltd. | Method for making electron gun |
US6005338A (en) * | 1996-04-18 | 1999-12-21 | Matsushita Electronics Corporation | Cathode-ray tube and process for producing the same |
WO1997049111A1 (en) * | 1996-06-17 | 1997-12-24 | Battelle Memorial Institute | Method and apparatus for ion and charged particle focusing |
US6107628A (en) * | 1998-06-03 | 2000-08-22 | Battelle Memorial Institute | Method and apparatus for directing ions and other charged particles generated at near atmospheric pressures into a region under vacuum |
RU2216123C2 (ru) * | 1998-12-15 | 2003-11-10 | Самсунг Дисплей Дивайсиз Ко., Лтд. | Комбинированное проекционное устройство |
JP3546729B2 (ja) * | 1998-12-21 | 2004-07-28 | 松下電器産業株式会社 | 電子銃、電子銃の製造方法、陰極線管装置 |
US6222577B1 (en) * | 1999-01-26 | 2001-04-24 | Presstek, Inc. | Multiple-beam, diode-pumped imaging system |
RU2000105121A (ru) * | 2000-03-02 | 2002-01-20 | Самсунг Эс-Ди-Ай Ко. | Лазерный электронно-лучевой прибор и способ его работы |
FR2875946A1 (fr) * | 2004-09-30 | 2006-03-31 | Thomson Licensing Sa | Structure de triode pour canon a electrons de tube a rayons cathodiques |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3575627A (en) * | 1967-12-29 | 1971-04-20 | Rca Corp | Cathode-ray tube with screen comprising laser crystals |
US3864645A (en) * | 1970-06-01 | 1975-02-04 | Minnesota Mining & Mfg | Electron beam laser optical scanning device |
US4529910A (en) * | 1982-03-31 | 1985-07-16 | Zenith Electronics Corporation | High-performance electron gun |
US4539687A (en) * | 1982-12-27 | 1985-09-03 | At&T Bell Laboratories | Semiconductor laser CRT |
US4695762A (en) * | 1985-06-28 | 1987-09-22 | American Telephone And Telegraph Company, At&T Bell Laboratories | Electron beam pumped rod-like light emitters |
NL8600391A (nl) * | 1986-02-17 | 1987-09-16 | Philips Nv | Kathodestraalbuis en werkwijze voor het vervaardigen van een kathodestraalbuis. |
GB8707169D0 (en) * | 1987-03-25 | 1987-04-29 | Philips Nv | Electron beam device |
NL8900069A (nl) * | 1989-01-12 | 1990-08-01 | Philips Nv | Beeldweergeefbuis. |
NL8900068A (nl) * | 1989-01-12 | 1990-08-01 | Philips Nv | Beeldweergeefbuis. |
NL9000349A (nl) * | 1990-02-14 | 1991-09-02 | Philips Nv | Beeldbuis met elektronenkanon met focuslens van het spiraaltype. |
-
1992
- 1992-05-08 EP EP92201308A patent/EP0513909B1/de not_active Expired - Lifetime
- 1992-05-08 DE DE69214876T patent/DE69214876T2/de not_active Expired - Fee Related
- 1992-05-14 JP JP4122053A patent/JPH05258683A/ja active Pending
-
1994
- 1994-12-16 US US08/359,325 patent/US5521464A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0513909B1 (de) | 1996-10-30 |
EP0513909A1 (de) | 1992-11-19 |
JPH05258683A (ja) | 1993-10-08 |
DE69214876T2 (de) | 1997-04-30 |
US5521464A (en) | 1996-05-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N |
|
8339 | Ceased/non-payment of the annual fee |