DE69214570D1 - CCD-Schieberegister - Google Patents

CCD-Schieberegister

Info

Publication number
DE69214570D1
DE69214570D1 DE69214570T DE69214570T DE69214570D1 DE 69214570 D1 DE69214570 D1 DE 69214570D1 DE 69214570 T DE69214570 T DE 69214570T DE 69214570 T DE69214570 T DE 69214570T DE 69214570 D1 DE69214570 D1 DE 69214570D1
Authority
DE
Germany
Prior art keywords
shift register
ccd shift
ccd
register
shift
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69214570T
Other languages
English (en)
Other versions
DE69214570T2 (de
Inventor
Kazushi Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69214570D1 publication Critical patent/DE69214570D1/de
Publication of DE69214570T2 publication Critical patent/DE69214570T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76875—Two-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE69214570T 1991-08-22 1992-08-12 CCD-Schieberegister Expired - Fee Related DE69214570T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03237217A JP3143979B2 (ja) 1991-08-22 1991-08-22 Ｃｃｄシフトレジスタ

Publications (2)

Publication Number Publication Date
DE69214570D1 true DE69214570D1 (de) 1996-11-21
DE69214570T2 DE69214570T2 (de) 1997-05-15

Family

ID=17012120

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69214570T Expired - Fee Related DE69214570T2 (de) 1991-08-22 1992-08-12 CCD-Schieberegister

Country Status (5)

Country Link
US (1) US5220185A (de)
EP (1) EP0529417B1 (de)
JP (1) JP3143979B2 (de)
KR (1) KR100225558B1 (de)
DE (1) DE69214570T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5514886A (en) * 1995-01-18 1996-05-07 Eastman Kodak Company Image sensor with improved output region for superior charge transfer characteristics
US5900654A (en) * 1995-07-17 1999-05-04 Spratt; James P. Radiation hardened charge coupled device
KR970042822A (ko) * 1995-12-30 1997-07-26 김준용 폴리부틸렌테레프탈레이트 수지조성물
JP2874668B2 (ja) * 1996-10-30 1999-03-24 日本電気株式会社 固体撮像装置の製造方法
KR100364231B1 (ko) * 1997-12-15 2003-02-19 제일모직주식회사 저온 충격강도가 우수한 열가소성 수지 조성물
JP2001308313A (ja) 2000-04-21 2001-11-02 Nec Corp 電荷転送装置及びそれを用いた固体撮像装置
JP2003283086A (ja) 2002-01-21 2003-10-03 Hitachi Cable Ltd 配線基板、配線基板の製造方法及び配線基板を用いた電子部品
US7429764B2 (en) * 2002-02-27 2008-09-30 Canon Kabushiki Kaisha Signal processing device and image pickup apparatus using the same
US6818483B2 (en) 2002-07-16 2004-11-16 Fairchild Imaging Large area, fast frame rate charge coupled device
JP2004140258A (ja) * 2002-10-18 2004-05-13 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
JP4353459B2 (ja) * 2003-04-15 2009-10-28 富士フイルム株式会社 信号電荷転送路
US8004724B2 (en) * 2005-12-05 2011-08-23 Canon Kabushiki Kaisha Method and apparatus for image reading with synchronized readout and lighting control
US20070258002A1 (en) * 2006-05-04 2007-11-08 Kevin Nay Imaging subsystem employing a bidirectional shift register
US20070258003A1 (en) * 2006-05-04 2007-11-08 Kevin Nay Imaging subsystem employing dual shift registers
US20080007622A1 (en) * 2006-06-08 2008-01-10 Eastman Kodak Company Method of improving solid-state image sensor sensitivity
GB201000117D0 (en) 2010-01-06 2010-02-17 Dow Corning Organopolysiloxanes containing an unsaturated group

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010675A (ja) * 1983-06-30 1985-01-19 Toshiba Corp 電荷結合素子
FR2549273B1 (fr) * 1983-07-12 1989-02-10 Thomson Csf Procede pour diminuer le bruit de precharge d'une capacite mos
JPS60123063A (ja) * 1983-12-07 1985-07-01 Toshiba Corp 電荷転送装置
JPS62188371A (ja) * 1986-02-14 1987-08-17 Pioneer Electronic Corp 電荷転送装置の入力バイアス回路
JP2642927B2 (ja) * 1986-06-12 1997-08-20 ソニー株式会社 電荷転送装置
JP2508668B2 (ja) * 1986-11-10 1996-06-19 ソニー株式会社 電荷転送装置

Also Published As

Publication number Publication date
EP0529417A1 (de) 1993-03-03
KR940004860A (ko) 1994-03-16
DE69214570T2 (de) 1997-05-15
JPH0555539A (ja) 1993-03-05
KR100225558B1 (ko) 1999-10-15
US5220185A (en) 1993-06-15
JP3143979B2 (ja) 2001-03-07
EP0529417B1 (de) 1996-10-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee