DE69212936T2 - Infrarot-Detektor mit einer Brückenstruktur - Google Patents

Infrarot-Detektor mit einer Brückenstruktur

Info

Publication number
DE69212936T2
DE69212936T2 DE69212936T DE69212936T DE69212936T2 DE 69212936 T2 DE69212936 T2 DE 69212936T2 DE 69212936 T DE69212936 T DE 69212936T DE 69212936 T DE69212936 T DE 69212936T DE 69212936 T2 DE69212936 T2 DE 69212936T2
Authority
DE
Germany
Prior art keywords
infrared detector
bridge structure
bridge
infrared
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69212936T
Other languages
English (en)
Other versions
DE69212936D1 (de
Inventor
Takeshi Kudo
Takehisa Mori
Kiyoshi Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Terumo Corp
Original Assignee
Terumo Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Terumo Corp filed Critical Terumo Corp
Application granted granted Critical
Publication of DE69212936D1 publication Critical patent/DE69212936D1/de
Publication of DE69212936T2 publication Critical patent/DE69212936T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
DE69212936T 1991-09-27 1992-09-24 Infrarot-Detektor mit einer Brückenstruktur Expired - Fee Related DE69212936T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3249027A JPH06160174A (ja) 1991-09-27 1991-09-27 赤外線センサ

Publications (2)

Publication Number Publication Date
DE69212936D1 DE69212936D1 (de) 1996-09-26
DE69212936T2 true DE69212936T2 (de) 1997-01-16

Family

ID=17186919

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69212936T Expired - Fee Related DE69212936T2 (de) 1991-09-27 1992-09-24 Infrarot-Detektor mit einer Brückenstruktur

Country Status (4)

Country Link
US (1) US5302933A (de)
EP (1) EP0534424B1 (de)
JP (1) JPH06160174A (de)
DE (1) DE69212936T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102022122536A1 (de) 2022-09-06 2024-03-07 Lpkf Laser & Electronics Aktiengesellschaft Mikro-Heizelement mit zumindest einer beheizbaren Basis sowie ein Mikro-Heizelement und ein Verfahren zur Herstellung des Mikro-Heizelements

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5426412A (en) * 1992-10-27 1995-06-20 Matsushita Electric Works, Ltd. Infrared detecting device and infrared detecting element for use in the device
JPH07209089A (ja) * 1994-01-24 1995-08-11 Terumo Corp 赤外線センサ
JPH08152356A (ja) * 1994-11-30 1996-06-11 Terumo Corp 赤外線センサ
JP3494747B2 (ja) * 1995-03-31 2004-02-09 石塚電子株式会社 薄膜温度センサ及びその製造方法
US7495220B2 (en) 1995-10-24 2009-02-24 Bae Systems Information And Electronics Systems Integration Inc. Uncooled infrared sensor
US5962854A (en) * 1996-06-12 1999-10-05 Ishizuka Electronics Corporation Infrared sensor and infrared detector
FR2752299B1 (fr) * 1996-08-08 1998-09-11 Commissariat Energie Atomique Detecteur infrarouge et procede de fabication de celui-ci
JP3377162B2 (ja) * 1997-01-17 2003-02-17 株式会社リコー 熱分析装置およびその計測方法
US6057246A (en) * 1998-04-28 2000-05-02 Vanguard International Semiconductor Corporation Method for etching a metal layer with dimensional control
KR20000007216A (ko) * 1998-07-01 2000-02-07 전주범 적외선 흡수 볼로메터 및 그 제조방법
WO2000004354A1 (en) * 1998-07-14 2000-01-27 Daewoo Electronics Co., Ltd. Method for manufacturing a three level bolometer
US6972436B2 (en) * 1998-08-28 2005-12-06 Cree, Inc. High voltage, high temperature capacitor and interconnection structures
WO2000012986A1 (en) * 1998-08-31 2000-03-09 Daewoo Electronics Co., Ltd. Bolometer including a reflective layer
EP1117978B1 (de) * 1998-08-31 2005-06-15 Daewoo Electronics Corporation Mit einem schlangenartigen spannungsausgleichenden element versehenes bolometer
WO2000034751A1 (en) * 1998-12-04 2000-06-15 Daewoo Electronics Co., Ltd. Infrared bolometer and method for manufacturing same
DE10029317A1 (de) 2000-06-20 2002-01-10 Hasse & Wrede Gmbh Verfahren zur Herstellung eines Drehschwingungsdämfergehäuses, insbesondere eines Gehäuses für einen Viskositätsdrehschwingungsdämpfer
CN101632034B (zh) 2007-03-09 2012-11-07 日本电气株式会社 热光学移相器
JP4993383B2 (ja) * 2008-05-13 2012-08-08 日本メクトロン株式会社 シール構造体
WO2020237039A1 (en) 2019-05-21 2020-11-26 Nextinput, Inc. Combined near and mid infrared sensor in a chip scale package

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56164582A (en) * 1980-05-23 1981-12-17 Hitachi Ltd Semiconductor piezo-electric element and manufacture thereof
WO1982001066A1 (en) * 1980-09-24 1982-04-01 Liddiard K Infrared radiation detector
JPS57178149A (en) * 1981-04-28 1982-11-02 Ricoh Co Ltd Manufacture of electric heater
JPS6080281A (ja) * 1983-10-07 1985-05-08 Sumitomo Electric Ind Ltd 半導体圧力センサ及びその製造方法
JPS6097676A (ja) * 1983-11-01 1985-05-31 Sumitomo Electric Ind Ltd 半導体圧力センサ及びその製造方法
JPH0765937B2 (ja) * 1986-05-27 1995-07-19 石塚電子株式会社 センサ素子およびその製造方法
JPH02138841A (ja) * 1988-08-03 1990-05-28 Fuji Electric Co Ltd 半導体圧力センサ
US5097841A (en) * 1988-09-22 1992-03-24 Terumo Kabushiki Kaisha Disposable pressure transducer and disposable pressure transducer apparatus
JPH02167441A (ja) * 1988-09-22 1990-06-27 Terumo Corp 使い捨て圧力変換器及び使い捨て圧力変換装置
JPH02237166A (ja) * 1989-03-10 1990-09-19 Mitsubishi Electric Corp 半導体圧力センサ
JP2800235B2 (ja) * 1989-03-14 1998-09-21 株式会社デンソー 半導体圧力センサ
EP0504928A3 (en) * 1991-03-20 1993-01-07 Terumo Kabushiki Kaisha Thermal type infrared sensor and method for production thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102022122536A1 (de) 2022-09-06 2024-03-07 Lpkf Laser & Electronics Aktiengesellschaft Mikro-Heizelement mit zumindest einer beheizbaren Basis sowie ein Mikro-Heizelement und ein Verfahren zur Herstellung des Mikro-Heizelements

Also Published As

Publication number Publication date
JPH06160174A (ja) 1994-06-07
EP0534424A1 (de) 1993-03-31
DE69212936D1 (de) 1996-09-26
US5302933A (en) 1994-04-12
EP0534424B1 (de) 1996-08-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee