DE69212278D1 - Festkörperbildaufnahmevorrichtung mit Mikrolinsen - Google Patents

Festkörperbildaufnahmevorrichtung mit Mikrolinsen

Info

Publication number
DE69212278D1
DE69212278D1 DE69212278T DE69212278T DE69212278D1 DE 69212278 D1 DE69212278 D1 DE 69212278D1 DE 69212278 T DE69212278 T DE 69212278T DE 69212278 T DE69212278 T DE 69212278T DE 69212278 D1 DE69212278 D1 DE 69212278D1
Authority
DE
Germany
Prior art keywords
microlenses
imaging device
solid state
state imaging
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69212278T
Other languages
English (en)
Other versions
DE69212278T2 (de
Inventor
Eiji Koyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69212278D1 publication Critical patent/DE69212278D1/de
Application granted granted Critical
Publication of DE69212278T2 publication Critical patent/DE69212278T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE69212278T 1991-11-15 1992-11-16 Festkörperbildaufnahmevorrichtung mit Mikrolinsen Expired - Lifetime DE69212278T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3300668A JPH05134111A (ja) 1991-11-15 1991-11-15 固体撮像装置

Publications (2)

Publication Number Publication Date
DE69212278D1 true DE69212278D1 (de) 1996-08-22
DE69212278T2 DE69212278T2 (de) 1997-01-23

Family

ID=17887635

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69212278T Expired - Lifetime DE69212278T2 (de) 1991-11-15 1992-11-16 Festkörperbildaufnahmevorrichtung mit Mikrolinsen

Country Status (5)

Country Link
US (1) US5323052A (de)
EP (1) EP0542581B1 (de)
JP (1) JPH05134111A (de)
KR (1) KR970002120B1 (de)
DE (1) DE69212278T2 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06151797A (ja) * 1992-11-11 1994-05-31 Sony Corp 固体撮像素子
JP2950714B2 (ja) * 1993-09-28 1999-09-20 シャープ株式会社 固体撮像装置およびその製造方法
US5471515A (en) * 1994-01-28 1995-11-28 California Institute Of Technology Active pixel sensor with intra-pixel charge transfer
USRE42918E1 (en) 1994-01-28 2011-11-15 California Institute Of Technology Single substrate camera device with CMOS image sensor
US6486503B1 (en) 1994-01-28 2002-11-26 California Institute Of Technology Active pixel sensor array with electronic shuttering
US6456326B2 (en) 1994-01-28 2002-09-24 California Institute Of Technology Single chip camera device having double sampling operation
US6021172A (en) 1994-01-28 2000-02-01 California Institute Of Technology Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter
JP2755176B2 (ja) * 1994-06-30 1998-05-20 日本電気株式会社 固体撮像素子
JP3405620B2 (ja) 1995-05-22 2003-05-12 松下電器産業株式会社 固体撮像装置
DE19545484C2 (de) * 1995-12-06 2002-06-20 Deutsche Telekom Ag Bildaufnahmeeinrichtung
EP0878007B1 (de) * 1996-01-22 2005-05-11 California Institute Of Technology Aktive bildelementsensormatrix mit elektronischer überblendung
JP2917920B2 (ja) * 1996-06-27 1999-07-12 日本電気株式会社 固体撮像装置およびその製造方法
KR100239408B1 (ko) * 1996-12-31 2000-01-15 김영환 고체 촬상 소자의 제조 방법
JP3447510B2 (ja) 1997-04-09 2003-09-16 Ｎｅｃエレクトロニクス株式会社 固体撮像素子、その製造方法及び固体撮像装置
JPH1168074A (ja) * 1997-08-13 1999-03-09 Sony Corp 固体撮像素子
US5965871A (en) * 1997-11-05 1999-10-12 Pixart Technology, Inc. Column readout multiplexer for CMOS image sensors with multiple readout and fixed pattern noise cancellation
US6140630A (en) * 1998-10-14 2000-10-31 Micron Technology, Inc. Vcc pump for CMOS imagers
US6665014B1 (en) * 1998-11-25 2003-12-16 Intel Corporation Microlens and photodetector
KR100359768B1 (ko) 1999-03-18 2002-11-07 주식회사 하이닉스반도체 고체 촬상 소자 및 그 제조방법
US6255676B1 (en) * 1999-06-30 2001-07-03 Hewlett Packard Company Charge coupled device with nonreflective coating
US7129982B1 (en) * 1999-12-30 2006-10-31 Intel Corporation Color image sensor with integrated binary optical elements
US6737626B1 (en) * 2001-08-06 2004-05-18 Pixim, Inc. Image sensors with underlying and lateral insulator structures
JP2003264284A (ja) * 2002-03-08 2003-09-19 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
TWM246923U (en) * 2003-07-08 2004-10-11 Honyi Prec Industry Co Ltd Image sensor module
US20060057765A1 (en) * 2004-09-13 2006-03-16 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor including multiple lenses and method of manufacture thereof
US7564629B1 (en) 2004-12-02 2009-07-21 Crosstek Capital, LLC Microlens alignment procedures in CMOS image sensor design
US7450161B1 (en) 2004-12-02 2008-11-11 Magnachip Semiconductor Ltd. System and method to enhance the uniformity of intensity distribution on digital imaging sensors
US7763918B1 (en) * 2004-12-02 2010-07-27 Chen Feng Image pixel design to enhance the uniformity of intensity distribution on digital image sensors
KR100697700B1 (ko) * 2005-01-25 2007-03-20 (주)아이디에스 Ｃｃｄ 고체촬상소자 및 그 제조방법
US20060169870A1 (en) * 2005-02-01 2006-08-03 Silsby Christopher D Image sensor with embedded optical element
US7553689B2 (en) * 2005-07-13 2009-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with micro-lens and method of making the same
US8921964B1 (en) 2013-08-22 2014-12-30 Arecont Vision, Llc. Dual layer pixel lens for low light cameras
JP2015200840A (ja) * 2014-04-10 2015-11-12 リコー光学株式会社 マイクロレンズアレイ基板

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4667092A (en) * 1982-12-28 1987-05-19 Nec Corporation Solid-state image device with resin lens and resin contact layer
JPS6047472A (ja) * 1983-08-26 1985-03-14 Hitachi Ltd 固体撮像素子
US4694185A (en) * 1986-04-18 1987-09-15 Eastman Kodak Company Light sensing devices with lenticular pixels
JPH01287952A (ja) * 1988-05-13 1989-11-20 Shinko Electric Ind Co Ltd 高周波素子用パッケージとその製造方法
JPH02309674A (ja) * 1989-05-24 1990-12-25 Sony Corp 固体撮像装置
JPH03107101A (ja) * 1989-09-20 1991-05-07 Dainippon Printing Co Ltd 集光性フィルター及びその製造方法
JP2678074B2 (ja) * 1989-12-19 1997-11-17 松下電子工業株式会社 固体撮像装置の製造方法
JPH03190167A (ja) * 1989-12-19 1991-08-20 Sharp Corp 固体撮像素子
US5239412A (en) * 1990-02-05 1993-08-24 Sharp Kabushiki Kaisha Solid image pickup device having microlenses
US5118924A (en) * 1990-10-01 1992-06-02 Eastman Kodak Company Static control overlayers on opto-electronic devices
KR920013734A (ko) * 1990-12-31 1992-07-29 김광호 칼라필터의 제조방법
JPH0595098A (ja) * 1991-10-02 1993-04-16 Olympus Optical Co Ltd 固体撮像装置

Also Published As

Publication number Publication date
JPH05134111A (ja) 1993-05-28
KR970002120B1 (ko) 1997-02-22
KR930011661A (ko) 1993-06-24
US5323052A (en) 1994-06-21
EP0542581B1 (de) 1996-07-17
DE69212278T2 (de) 1997-01-23
EP0542581A1 (de) 1993-05-19

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