DE69201044T2 - Kompensierte Laserstruktur für analoge Übertragungssysteme. - Google Patents

Kompensierte Laserstruktur für analoge Übertragungssysteme.

Info

Publication number
DE69201044T2
DE69201044T2 DE69201044T DE69201044T DE69201044T2 DE 69201044 T2 DE69201044 T2 DE 69201044T2 DE 69201044 T DE69201044 T DE 69201044T DE 69201044 T DE69201044 T DE 69201044T DE 69201044 T2 DE69201044 T2 DE 69201044T2
Authority
DE
Germany
Prior art keywords
transmission systems
laser structure
analog transmission
compensated laser
compensated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69201044T
Other languages
English (en)
Other versions
DE69201044D1 (de
Inventor
Ernest Eisenhardt Bergmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69201044D1 publication Critical patent/DE69201044D1/de
Application granted granted Critical
Publication of DE69201044T2 publication Critical patent/DE69201044T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/501—Structural aspects
    • H04B10/503—Laser transmitters
    • H04B10/504—Laser transmitters using direct modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06213—Amplitude modulation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/58—Compensation for non-linear transmitter output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0035—Simulations of laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Lasers (AREA)
DE69201044T 1991-10-22 1992-10-16 Kompensierte Laserstruktur für analoge Übertragungssysteme. Expired - Fee Related DE69201044T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/781,540 US5241552A (en) 1991-10-22 1991-10-22 Compensated laser structure for analog communication applications

Publications (2)

Publication Number Publication Date
DE69201044D1 DE69201044D1 (de) 1995-02-09
DE69201044T2 true DE69201044T2 (de) 1995-05-11

Family

ID=25123064

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69201044T Expired - Fee Related DE69201044T2 (de) 1991-10-22 1992-10-16 Kompensierte Laserstruktur für analoge Übertragungssysteme.

Country Status (4)

Country Link
US (1) US5241552A (de)
EP (1) EP0539119B1 (de)
JP (1) JP2999336B2 (de)
DE (1) DE69201044T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2954422B2 (ja) * 1992-05-22 1999-09-27 株式会社日立製作所 光送信モジュール
CA2166829A1 (en) * 1995-02-02 1996-08-03 Attilio Joseph Rainal System and method for minimizing nonlinear distortion in optical communication systems employing laser intensity modulation
US10234545B2 (en) 2010-12-01 2019-03-19 Microsoft Technology Licensing, Llc Light source module
US10257932B2 (en) 2016-02-16 2019-04-09 Microsoft Technology Licensing, Llc. Laser diode chip on printed circuit board

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4101847A (en) * 1976-11-01 1978-07-18 Bell Telephone Laboratories, Incorporated Laser control circuit
JPS61284987A (ja) * 1985-06-10 1986-12-15 Sharp Corp 半導体レ−ザ素子
JPS63244785A (ja) * 1987-03-31 1988-10-12 Toshiba Corp 半導体発光素子及びその製造方法
JPH0231486A (ja) * 1988-07-20 1990-02-01 Nec Corp 半導体レーザ
JPH02138456U (de) * 1989-04-20 1990-11-19
US5020049A (en) * 1989-10-13 1991-05-28 At&T Bell Laboratories Optical sub-carrier multiplex television transmission system using a linear laser diode
US5034334A (en) * 1989-10-13 1991-07-23 At&T Bell Laboratories Method of producing a semiconductor laser adapted for use in an analog optical communications system
US5012484A (en) * 1990-01-02 1991-04-30 At&T Bell Laboratories Analog optical fiber communication system, and laser adapted for use in such a system

Also Published As

Publication number Publication date
EP0539119B1 (de) 1994-12-28
US5241552A (en) 1993-08-31
DE69201044D1 (de) 1995-02-09
JPH05206549A (ja) 1993-08-13
JP2999336B2 (ja) 2000-01-17
EP0539119A1 (de) 1993-04-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee