DE69130493D1 - Steuerverfahren und Steueranordnung für eine Halbleiter-PNPN-Vorrichtung - Google Patents
Steuerverfahren und Steueranordnung für eine Halbleiter-PNPN-VorrichtungInfo
- Publication number
- DE69130493D1 DE69130493D1 DE69130493T DE69130493T DE69130493D1 DE 69130493 D1 DE69130493 D1 DE 69130493D1 DE 69130493 T DE69130493 T DE 69130493T DE 69130493 T DE69130493 T DE 69130493T DE 69130493 D1 DE69130493 D1 DE 69130493D1
- Authority
- DE
- Germany
- Prior art keywords
- control
- control method
- pnpn device
- arrangement
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
- H01L33/0016—Devices characterised by their operation having p-n or hi-lo junctions having at least two p-n junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06203—Transistor-type lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
- H01S5/0028—Laser diodes used as detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Thyristors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11361290A JP2687673B2 (ja) | 1990-04-27 | 1990-04-27 | pnpn半導体素子の駆動方法 |
JP12437390A JP2687677B2 (ja) | 1990-05-15 | 1990-05-15 | pnpn半導体素子の駆動方法 |
JP2167001A JPH0455833A (ja) | 1990-06-26 | 1990-06-26 | 光スイッチング装置および光スイッチング装置の駆動方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69130493D1 true DE69130493D1 (de) | 1998-12-24 |
DE69130493T2 DE69130493T2 (de) | 1999-07-22 |
Family
ID=27312544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69130493T Expired - Fee Related DE69130493T2 (de) | 1990-04-27 | 1991-04-26 | Steuerverfahren und Steueranordnung für eine Halbleiter-PNPN-Vorrichtung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5153758A (de) |
EP (1) | EP0454168B1 (de) |
CA (1) | CA2041316C (de) |
DE (1) | DE69130493T2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04280522A (ja) * | 1991-03-08 | 1992-10-06 | Nec Corp | 光接続装置とその駆動方法 |
US5646760A (en) * | 1995-04-12 | 1997-07-08 | Interuniversitair Micro-Elektronica Centrum Vzw | Differential pair of optical thyristors used as an optoelectronic transceiver |
US6236666B1 (en) | 1996-05-17 | 2001-05-22 | Uab Research Foundation | Semiconductor laser with a superbroadband or multiline spectral output |
DE102013113010A1 (de) * | 2013-11-25 | 2015-05-28 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6431134A (en) * | 1987-07-27 | 1989-02-01 | Nec Corp | Driving method for pnpn optical thyristor |
JP2503597B2 (ja) * | 1988-07-27 | 1996-06-05 | 日本電気株式会社 | pnpn半導体素子の駆動方法及びスイッチング素子の駆動方法 |
JP2666418B2 (ja) * | 1988-10-25 | 1997-10-22 | 日本電気株式会社 | pnpn構造体の駆動方法 |
JPH02234135A (ja) * | 1989-03-07 | 1990-09-17 | Nec Corp | 光論理素子 |
-
1991
- 1991-04-26 DE DE69130493T patent/DE69130493T2/de not_active Expired - Fee Related
- 1991-04-26 EP EP91106854A patent/EP0454168B1/de not_active Expired - Lifetime
- 1991-04-26 CA CA002041316A patent/CA2041316C/en not_active Expired - Fee Related
- 1991-04-29 US US07/692,850 patent/US5153758A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69130493T2 (de) | 1999-07-22 |
US5153758A (en) | 1992-10-06 |
EP0454168A3 (en) | 1993-04-21 |
CA2041316C (en) | 1994-07-26 |
EP0454168B1 (de) | 1998-11-18 |
EP0454168A2 (de) | 1991-10-30 |
CA2041316A1 (en) | 1991-10-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |