DE69129825D1 - Verfahren zur Messung einer substitutiven Kohlenstoffkonzentration - Google Patents

Verfahren zur Messung einer substitutiven Kohlenstoffkonzentration

Info

Publication number
DE69129825D1
DE69129825D1 DE69129825T DE69129825T DE69129825D1 DE 69129825 D1 DE69129825 D1 DE 69129825D1 DE 69129825 T DE69129825 T DE 69129825T DE 69129825 T DE69129825 T DE 69129825T DE 69129825 D1 DE69129825 D1 DE 69129825D1
Authority
DE
Germany
Prior art keywords
measuring
carbon concentration
substitutive
substitutive carbon
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69129825T
Other languages
English (en)
Other versions
DE69129825T2 (de
Inventor
Hiroshi Shirai
Mikio Watanabe
Shinichiro Takasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2227454A external-priority patent/JP2897933B2/ja
Priority claimed from JP22745590A external-priority patent/JPH04109146A/ja
Priority claimed from JP22745390A external-priority patent/JP3178607B2/ja
Priority claimed from JP2227456A external-priority patent/JP2855475B2/ja
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Publication of DE69129825D1 publication Critical patent/DE69129825D1/de
Application granted granted Critical
Publication of DE69129825T2 publication Critical patent/DE69129825T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/59—Transmissivity
DE69129825T 1990-08-29 1991-08-28 Verfahren zur Messung einer substitutiven Kohlenstoffkonzentration Expired - Fee Related DE69129825T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2227454A JP2897933B2 (ja) 1990-08-29 1990-08-29 シリコンウェーハの製造方法
JP22745590A JPH04109146A (ja) 1990-08-29 1990-08-29 引上シリコンウェーハの置換型炭素濃度測定方法
JP22745390A JP3178607B2 (ja) 1990-08-29 1990-08-29 引上シリコンウェーハの置換型炭素濃度測定方法
JP2227456A JP2855475B2 (ja) 1990-08-29 1990-08-29 シリコンウェーハの製造方法

Publications (2)

Publication Number Publication Date
DE69129825D1 true DE69129825D1 (de) 1998-08-27
DE69129825T2 DE69129825T2 (de) 1999-02-11

Family

ID=27477264

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69129825T Expired - Fee Related DE69129825T2 (de) 1990-08-29 1991-08-28 Verfahren zur Messung einer substitutiven Kohlenstoffkonzentration

Country Status (4)

Country Link
US (1) US5808745A (de)
EP (1) EP0473130B1 (de)
KR (1) KR0157030B1 (de)
DE (1) DE69129825T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5444246A (en) * 1992-09-30 1995-08-22 Shin-Etsu Handotai Co., Ltd. Determining carbon concentration in silicon single crystal by FT-IR
WO2003021239A1 (fr) * 2001-08-28 2003-03-13 Matsushita Electric Industrial Co., Ltd. Appareil de mesure d'information sur un composant particulier
DE102004014984B4 (de) * 2004-03-26 2006-05-11 Wacker Chemie Ag Verfahren zur Bestimmung des substitutionellen Kohlenstoffgehalts in poly- oder monokristallinem Silicium
WO2005114232A2 (en) * 2004-05-14 2005-12-01 Ihp Gmbh - Innovations For High Performance Microelectronics / Institut Für Innovative Mikroelektronik Method and apparatus for the determination of the concentration of impurities in a wafer
DE102007029666B4 (de) * 2007-06-27 2011-03-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Bearbeiten eines Substrats
JP5524894B2 (ja) 2011-04-04 2014-06-18 信越化学工業株式会社 多結晶シリコン中の炭素濃度測定方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4590574A (en) * 1983-04-29 1986-05-20 International Business Machines Corp. Method for determining oxygen and carbon in silicon semiconductor wafer having rough surface
US5007741A (en) * 1989-09-25 1991-04-16 At&T Bell Laboratories Methods and apparatus for detecting impurities in semiconductors
US5287167A (en) * 1990-07-31 1994-02-15 Toshiba Ceramics Co., Ltd. Method for measuring interstitial oxygen concentration

Also Published As

Publication number Publication date
EP0473130A2 (de) 1992-03-04
EP0473130B1 (de) 1998-07-22
US5808745A (en) 1998-09-15
KR0157030B1 (ko) 1999-05-01
DE69129825T2 (de) 1999-02-11
EP0473130A3 (en) 1992-10-21
KR920004831A (ko) 1992-03-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee