DE69128909D1 - EPROM-Feld - Google Patents

EPROM-Feld

Info

Publication number
DE69128909D1
DE69128909D1 DE69128909T DE69128909T DE69128909D1 DE 69128909 D1 DE69128909 D1 DE 69128909D1 DE 69128909 T DE69128909 T DE 69128909T DE 69128909 T DE69128909 T DE 69128909T DE 69128909 D1 DE69128909 D1 DE 69128909D1
Authority
DE
Germany
Prior art keywords
eprom
field
eprom field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69128909T
Other languages
English (en)
Inventor
Boaz Eitan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Waferscale Integration Inc
Original Assignee
Waferscale Integration Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Waferscale Integration Inc filed Critical Waferscale Integration Inc
Application granted granted Critical
Publication of DE69128909D1 publication Critical patent/DE69128909D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491—Virtual ground arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
DE69128909T 1990-11-13 1991-11-12 EPROM-Feld Expired - Lifetime DE69128909D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61234690A 1990-11-13 1990-11-13

Publications (1)

Publication Number Publication Date
DE69128909D1 true DE69128909D1 (de) 1998-03-19

Family

ID=24452772

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69128909T Expired - Lifetime DE69128909D1 (de) 1990-11-13 1991-11-12 EPROM-Feld

Country Status (4)

Country Link
US (1) US5862076A (de)
EP (1) EP0486249B1 (de)
JP (1) JP3002309B2 (de)
DE (1) DE69128909D1 (de)

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US6430077B1 (en) 1997-12-12 2002-08-06 Saifun Semiconductors Ltd. Method for regulating read voltage level at the drain of a cell in a symmetric array
US6633496B2 (en) 1997-12-12 2003-10-14 Saifun Semiconductors Ltd. Symmetric architecture for memory cells having widely spread metal bit lines
US6633499B1 (en) 1997-12-12 2003-10-14 Saifun Semiconductors Ltd. Method for reducing voltage drops in symmetric array architectures
US6928001B2 (en) * 2000-12-07 2005-08-09 Saifun Semiconductors Ltd. Programming and erasing methods for a non-volatile memory cell
US6396741B1 (en) * 2000-05-04 2002-05-28 Saifun Semiconductors Ltd. Programming of nonvolatile memory cells
US6614692B2 (en) 2001-01-18 2003-09-02 Saifun Semiconductors Ltd. EEPROM array and method for operation thereof
US6584017B2 (en) 2001-04-05 2003-06-24 Saifun Semiconductors Ltd. Method for programming a reference cell
US6677805B2 (en) * 2001-04-05 2004-01-13 Saifun Semiconductors Ltd. Charge pump stage with body effect minimization
US6636440B2 (en) 2001-04-25 2003-10-21 Saifun Semiconductors Ltd. Method for operation of an EEPROM array, including refresh thereof
KR100416599B1 (ko) * 2001-05-31 2004-02-05 삼성전자주식회사 집적도와 독출동작 속도를 향상시키고 전력소모를감소시킬 수 있는 메탈 프로그래머블 롬의 메모리셀 구조
US6480422B1 (en) 2001-06-14 2002-11-12 Multi Level Memory Technology Contactless flash memory with shared buried diffusion bit line architecture
US6643181B2 (en) 2001-10-24 2003-11-04 Saifun Semiconductors Ltd. Method for erasing a memory cell
US7098107B2 (en) * 2001-11-19 2006-08-29 Saifun Semiconductor Ltd. Protective layer in memory device and method therefor
US6885585B2 (en) * 2001-12-20 2005-04-26 Saifun Semiconductors Ltd. NROM NOR array
WO2003060920A1 (en) * 2002-01-11 2003-07-24 Reflectivity, Inc. Spatial light modulator with charge-pump pixel cell
US6975536B2 (en) * 2002-01-31 2005-12-13 Saifun Semiconductors Ltd. Mass storage array and methods for operation thereof
US6700818B2 (en) * 2002-01-31 2004-03-02 Saifun Semiconductors Ltd. Method for operating a memory device
US6914820B1 (en) 2002-05-06 2005-07-05 Multi Level Memory Technology Erasing storage nodes in a bi-directional nonvolatile memory cell
US6747896B2 (en) 2002-05-06 2004-06-08 Multi Level Memory Technology Bi-directional floating gate nonvolatile memory
US7221591B1 (en) * 2002-05-06 2007-05-22 Samsung Electronics Co., Ltd. Fabricating bi-directional nonvolatile memory cells
US6917544B2 (en) * 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US6826107B2 (en) * 2002-08-01 2004-11-30 Saifun Semiconductors Ltd. High voltage insertion in flash memory cards
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US7178004B2 (en) * 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US7123532B2 (en) * 2003-09-16 2006-10-17 Saifun Semiconductors Ltd. Operating array cells with matched reference cells
US7095655B2 (en) * 2004-08-12 2006-08-22 Saifun Semiconductors Ltd. Dynamic matching of signal path and reference path for sensing
US20060036803A1 (en) * 2004-08-16 2006-02-16 Mori Edan Non-volatile memory device controlled by a micro-controller
US7638850B2 (en) * 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US20060146624A1 (en) * 2004-12-02 2006-07-06 Saifun Semiconductors, Ltd. Current folding sense amplifier
CN1838323A (zh) * 2005-01-19 2006-09-27 赛芬半导体有限公司 可预防固定模式编程的方法
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
US7786512B2 (en) * 2005-07-18 2010-08-31 Saifun Semiconductors Ltd. Dense non-volatile memory array and method of fabrication
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US20070096199A1 (en) * 2005-09-08 2007-05-03 Eli Lusky Method of manufacturing symmetric arrays
US20070120180A1 (en) * 2005-11-25 2007-05-31 Boaz Eitan Transition areas for dense memory arrays
US7352627B2 (en) * 2006-01-03 2008-04-01 Saifon Semiconductors Ltd. Method, system, and circuit for operating a non-volatile memory array
US7808818B2 (en) * 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US20070173017A1 (en) * 2006-01-20 2007-07-26 Saifun Semiconductors, Ltd. Advanced non-volatile memory array and method of fabrication thereof
US8253452B2 (en) * 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7760554B2 (en) * 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US7692961B2 (en) * 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US20070255889A1 (en) * 2006-03-22 2007-11-01 Yoav Yogev Non-volatile memory device and method of operating the device
US7701779B2 (en) * 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7605579B2 (en) * 2006-09-18 2009-10-20 Saifun Semiconductors Ltd. Measuring and controlling current consumption and output current of charge pumps
US7965551B2 (en) * 2007-02-07 2011-06-21 Macronix International Co., Ltd. Method for metal bit line arrangement
US20080239599A1 (en) * 2007-04-01 2008-10-02 Yehuda Yizraeli Clamping Voltage Events Such As ESD
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US7590001B2 (en) 2007-12-18 2009-09-15 Saifun Semiconductors Ltd. Flash memory with optimized write sector spares
JP2010021492A (ja) 2008-07-14 2010-01-28 Toshiba Corp 不揮発性半導体記憶装置およびその制御方法

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US4258466A (en) * 1978-11-02 1981-03-31 Texas Instruments Incorporated High density electrically programmable ROM
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US4267632A (en) * 1979-10-19 1981-05-19 Intel Corporation Process for fabricating a high density electrically programmable memory array
US4281397A (en) * 1979-10-29 1981-07-28 Texas Instruments Incorporated Virtual ground MOS EPROM or ROM matrix
GB2094086B (en) * 1981-03-03 1985-08-14 Tokyo Shibaura Electric Co Non-volatile semiconductor memory system
JPS59103352A (ja) * 1982-12-06 1984-06-14 Oki Electric Ind Co Ltd Ｍｏｓ型半導体集積回路装置
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IT1213241B (it) * 1984-11-07 1989-12-14 Ates Componenti Elettron Matrice di memoria eprom con celle elementari simmetriche mos e suo metodo di scrittura.
JPS61136274A (ja) * 1984-12-07 1986-06-24 Toshiba Corp 半導体装置
US4635347A (en) * 1985-03-29 1987-01-13 Advanced Micro Devices, Inc. Method of fabricating titanium silicide gate electrodes and interconnections
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JPS63186477A (ja) * 1987-01-29 1988-08-02 Fujitsu Ltd 半導体装置の製造方法
JPS63252481A (ja) * 1987-04-09 1988-10-19 Toshiba Corp 不揮発性半導体メモリ
US5008856A (en) * 1987-06-29 1991-04-16 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with NAND cell structure
JP2511485B2 (ja) * 1988-01-12 1996-06-26 沖電気工業株式会社 半導体記憶装置
FR2626401B1 (fr) * 1988-01-26 1990-05-18 Sgs Thomson Microelectronics Memoire eeprom a grille flottante avec transistor de selection de ligne de source
JPH0770235B2 (ja) * 1988-06-24 1995-07-31 株式会社東芝 不揮発性メモリ回路装置
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US4996669A (en) * 1989-03-08 1991-02-26 Kabushiki Kaisha Toshiba Electrically erasable programmable read-only memory with NAND memory cell structure
US4992980A (en) * 1989-08-07 1991-02-12 Intel Corporation Novel architecture for virtual ground high-density EPROMS
US5204835A (en) * 1990-06-13 1993-04-20 Waferscale Integration Inc. Eprom virtual ground array
US5245570A (en) * 1990-12-21 1993-09-14 Intel Corporation Floating gate non-volatile memory blocks and select transistors
US5197029A (en) * 1991-02-07 1993-03-23 Texas Instruments Incorporated Common-line connection for integrated memory array

Also Published As

Publication number Publication date
JPH0758299A (ja) 1995-03-03
EP0486249A3 (en) 1993-05-19
US5862076A (en) 1999-01-19
EP0486249A2 (de) 1992-05-20
EP0486249B1 (de) 1998-02-11
JP3002309B2 (ja) 2000-01-24

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Legal Events

Date Code Title Description
8332 No legal effect for de