DE69127561D1 - Optisches Wellenleiterelement und Verfahren zum Betreiben desselben - Google Patents

Optisches Wellenleiterelement und Verfahren zum Betreiben desselben

Info

Publication number
DE69127561D1
DE69127561D1 DE69127561T DE69127561T DE69127561D1 DE 69127561 D1 DE69127561 D1 DE 69127561D1 DE 69127561 T DE69127561 T DE 69127561T DE 69127561 T DE69127561 T DE 69127561T DE 69127561 D1 DE69127561 D1 DE 69127561D1
Authority
DE
Germany
Prior art keywords
operating
same
optical waveguide
waveguide element
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69127561T
Other languages
English (en)
Other versions
DE69127561T2 (de
Inventor
Jun Nitta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69127561D1 publication Critical patent/DE69127561D1/de
Publication of DE69127561T2 publication Critical patent/DE69127561T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/29—Repeaters
    • H04B10/291—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form
    • H04B10/2912—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing
    • H04B10/2914—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing using lumped semiconductor optical amplifiers [SOA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5045—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement having a frequency filtering function

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Semiconductor Lasers (AREA)
DE69127561T 1990-02-27 1991-02-26 Optisches Wellenleiterelement und Verfahren zum Betreiben desselben Expired - Fee Related DE69127561T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2046586A JP2808562B2 (ja) 1990-02-27 1990-02-27 半導体光増幅素子

Publications (2)

Publication Number Publication Date
DE69127561D1 true DE69127561D1 (de) 1997-10-16
DE69127561T2 DE69127561T2 (de) 1998-02-26

Family

ID=12751406

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69127561T Expired - Fee Related DE69127561T2 (de) 1990-02-27 1991-02-26 Optisches Wellenleiterelement und Verfahren zum Betreiben desselben

Country Status (4)

Country Link
US (1) US5157544A (de)
EP (1) EP0444607B1 (de)
JP (1) JP2808562B2 (de)
DE (1) DE69127561T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3154418B2 (ja) * 1990-06-21 2001-04-09 キヤノン株式会社 半導体光増幅装置、光通信システム、双方向光通信システム、光通信ネットワーク、及び集積型光ノード
US5260822A (en) * 1992-01-31 1993-11-09 Massachusetts Institute Of Technology Tapered semiconductor laser gain structure with cavity spoiling grooves
US5555544A (en) * 1992-01-31 1996-09-10 Massachusetts Institute Of Technology Tapered semiconductor laser oscillator
JP3204485B2 (ja) * 1995-03-31 2001-09-04 キヤノン株式会社 光半導体装置及びその作製方法
US7489440B2 (en) * 2006-10-19 2009-02-10 International Business Machines Corporation Optical spectral filtering and dispersion compensation using semiconductor optical amplifiers
US8124468B2 (en) * 2009-06-30 2012-02-28 Semiconductor Components Industries, Llc Process of forming an electronic device including a well region
US8222695B2 (en) * 2009-06-30 2012-07-17 Semiconductor Components Industries, Llc Process of forming an electronic device including an integrated circuit with transistors coupled to each other

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58202581A (ja) * 1982-02-12 1983-11-25 Nippon Telegr & Teleph Corp <Ntt> レ−ザダイオ−ド光制御装置
US4525687A (en) * 1983-02-28 1985-06-25 At&T Bell Laboratories High speed light modulator using multiple quantum well structures
JPS60260024A (ja) * 1984-06-07 1985-12-23 Kokusai Denshin Denwa Co Ltd <Kdd> 光変調素子
JPS6155981A (ja) * 1984-08-27 1986-03-20 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体発光素子
EP0547042A3 (en) * 1986-07-25 1993-08-18 Mitsubishi Denki Kabushiki Kaisha A semiconductor laser device
JP2544410B2 (ja) * 1987-11-11 1996-10-16 株式会社日立製作所 波長可変半導体装置
GB2215072A (en) * 1988-02-12 1989-09-13 Philips Electronic Associated A method of modulating an optical beam
US4904045A (en) * 1988-03-25 1990-02-27 American Telephone And Telegraph Company Grating coupler with monolithically integrated quantum well index modulator
US4961197A (en) * 1988-09-07 1990-10-02 Hitachi, Ltd. Semiconductor laser device
US4942366A (en) * 1989-03-21 1990-07-17 General Electric Company Amplifier device with coupled surface emitting grating
GB2237654B (en) * 1989-11-02 1993-11-10 Stc Plc Semiconductor optical source
US5004325A (en) * 1990-01-16 1991-04-02 At&T Bell Laboratories Optical processing using a multilayer heterostructure

Also Published As

Publication number Publication date
EP0444607B1 (de) 1997-09-10
DE69127561T2 (de) 1998-02-26
EP0444607A3 (en) 1994-05-18
US5157544A (en) 1992-10-20
JPH03248130A (ja) 1991-11-06
EP0444607A2 (de) 1991-09-04
JP2808562B2 (ja) 1998-10-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee